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Preparation and Properties of $Zn_{1-x}Mg_xO$ Thin Films Prepared by Pulsed Laser Deposition Method (펄스 레이저 증착법을 이용한 $Zn_{1-x}Mg_xO$ 박막의 제작과 특성연구)

  • Suh, Kwang-Jong
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.1 s.34
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    • pp.73-76
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    • 2005
  • To widen the band gap of ZnO, we have investigated $Zn_{1-x}Mg_xO(ZMO)$ thin films prepared by pulsed laser deposition on c-plane sapphire substrates at $500^{\circ}C$. From X-ray diffraction patterns, ZMO films show only the (0002) and (0004) diffraction peaks. It means that the flints have the wurtzite structure. Segregation of ZnO and MgO phases is found in the films with x=0.59. All the samples are highly transparent in the visible region and have a sharp absorption edge in the UV region. The shift of absorption edge to higher energy is observed in the films with higher Mg composition. The excitonic nature of the films is clearly appeared in the spectra for all alloy compositions. The optical band-gap ($E_g$) of ZMO films is obtained from the ${\alpha}^2$ vs Photon energy plot assuming ${\alpha}^2\;\propto$ (hv - $E_g$), where u is the absorption coefficient and hv is the photon energy. The value of $E_g$ increases up to 3.72 eV for the films with x=0.35. It is important to adjust Mg composition control for controlling the band-gap of ZMO films.

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Study on Post Annealing Dependence of BST Thin Films (열처리에 따른 BST 박막의 특성에 관한 연구)

  • Chi, Ming Lu;Park, In-Chul;Kwon, Hak-Yong;Son, Jae-Goo;Kim, Hong-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.197-198
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    • 2005
  • 본 논문에서는 p-type (100)Si. (100)MgO 그리고 MgO/Si 기판 위에 RF Magnetron sputtering 법으로 $Ba_{0.5}Sr_{0.5}TiO_3$(BST) 박막을 증착 후 $600^{\circ}C$ 의 질소분위에서 RTA(Rapid Thermal Annealing)를 이용한 1 분간의 고온 급속열처리를 하였다. XRD 측정결과 모든 기판에서 (110) $Ba_{0.5}Sr_{0.5}TiO_3$의 주피크가 관찰되어졌고, 열처리 후 피크 세기가 증가함을 확인할 수 있었다. C-V 특성에서 각각의 기판에서 측정된 커패시턴스 값으로 계산된 유전율은 120(bare Si), 305(MgO/Si) 그리고 310(MgO)이었다. 누설 전류 특성에서는 150KV/cm이내의 인가전계에서 0.1$uA/cm^2$이하의 안정된 누설전류값을 보여주었다. 결론적으로 MgO 버퍼층을 이용한 기판이 BST 박막의 증착을 위한 기판으로써 효과적임을 알 수 있었다.

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Mineralization of Geothite and Lepidocrocite on the Twisted-stalk and Sheathed-filaments from the Microbial Origin (미생물 기원의 나선형 및 협막구조물에 형성된 침철석과 레피도크로사이트의 결정화작용)

  • Park, Cheon-Young;Cho, Sang-Seob
    • Economic and Environmental Geology
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    • v.42 no.6
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    • pp.549-559
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    • 2009
  • The objectives of this study are to investigate the biomineralization of goethite and lepidocrocite formed on the twisted-stalk and the sheathed-filament structure that is suggest microbe origin, and heavy metal in the yellow Fe-hydroxide. On the ratio of Cl and the Cl/Br ratios that are a pollution and non-pollution of groundwaters, it is indicated that the groundwater in this areas were relatively contaminated by human activity. The composition of the yellow Fe-hydroxide consisted mainly of $Fe_2O_3$ and $SiO_2$. The content of $Fe_2O_3$ ranges from 58.57 wt.% to 75.7 3wt.%, and $SiO_2$ content ranges from 5.8 wt.% to 16.17 wt.%. Heavy metal elements such as Zn(max. 6,160 mg/kg), Pb(max. 377 mg/kg), U(max. 503 mg/kg), Cr(max. 203 mg/kg), Cu(max. 77 mg/kg), V(max. 162 mg/kg), Ni(max. 105 mg/kg) were observed to be rich in those yellow Fe-hydroxide. The lath and platy crystals and needle-shaped crystals were clearly observed on the twisted-stalks and sheathed-filaments structure. The goethite, gypsum, and lepidocrocite were identified in the yellow Fe-hydroxide by x-ray powder diffraction.

Double Texturing of Glass Substrate and ZnO : Al Transparent Electrode Surfaces for High Performance Thin Film Solar Cells (고성능 박막태양전지를 위한 유리 기판 및 산화 아연 투명 전극의 2중 구조 표면 조직화 공정 연구)

  • Kang, Dong-Won
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.66 no.8
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    • pp.1230-1235
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    • 2017
  • We studied surface texture-etching of glass substrate by using reactive ion etching process with various working pressure (0.7~9.0 mT). With the increase in the pressure, a haze parameter, which means diffusive transmittance/total transmittance, was increased in overall wavelength regions, as measured by spectrophotometer. Also, atomic force microscopy (AFM) study also showed that the surface topography transformed from V-shaped, keen surface to U-shaped, flattened surface, which is beneficial for nanocrystalline silicon semiconductor growth with suppressing defective crack formation. The texture-etched ZnO:Al combined with textured glass exhibited pronounced haze properties that showed 60~90 % in overall spectral wavelength regions. This promising optical properties of double textured, transparent conducting substrate can be widely applied in silicon thin film photovoltaics and other optoelectronic devices.

Studies on the Stability of Oxytetracycline-Mg Complex Preparation (Oxytetracycline-Mg Complex제제의 안정성에 관한 연구)

  • Kim, Jung-Woo;Kim, Kwang-Nam;Kim, Ki-Won
    • Journal of Pharmaceutical Investigation
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    • v.5 no.3
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    • pp.30-35
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    • 1975
  • When the pH of the mixture containing oxytetracycline, $MgCl_26H_2O$ (2 : 1) and citric acid in aqueous solution is changed by adding monoethanolamine, some difference substances are produced. In the range of pH 8.5-9.3, the stable substance which exhibit U. V. max. absorption at 267.5-268 nm and 372.5 nm is produced. According to preparing method, the mixture of oxytetracycline. $MgCl_26H_2O$ (2 : 1) and citric acid in 75% propylene glycol aqueous solution are dissolved with monoethanolamine, and then, it is standed for a long time. An unknown substance is precipitated. It seems to be a compound containing $MgCl_26H_2O$, citric acid and monoethanolamine, but not oxytetracycline.

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MBE 법으로 선택적 성장된 GaN 나노선의 광/구조 특성 조사

  • Lee, Sang-Tae;Jeon, Seung-Gi;Choe, Hyo-Seok;Kim, Mun-Deok;O, Jae-Eung;Kim, Song-Gang;Yang, U-Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.355-355
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    • 2012
  • Si (111) 기판 위에 polystyrene (PS) bead를 사용하여 만들어진 약 100 nm 나노 구멍에 GaN나노선을 molecular beam epitaxy 법으로 성장하였다. 성장 온도와 III/V 비율 변화에 대하여 성장된 GaN 나노선의 모양과 광학적 특성은 scanning electron microscopy (SEM)와 photoluminescence (PL) 등으로 조사하였으며, InN/GaN 이종접합 및 InGaN p-n 다이오드구조를 성장하여 atomic force microscopy의 tip 접촉방법으로 전기적 특성을 조사하였다. PL 측정 결과 성장온도가 높아지면 Ga 빈자리와 관계된 3.28 eV의 donor acceptor pair (DAP) 신호와 3.42 eV의 stacking faults (SF) 결함에 기인된 발광 신호세기가 감소하는 결과를 SEM으로부터 나노선 폭 및 길이는 좁아지면서 짧아지는 것을 관측하였다. 또한 nitrogen 원자양이 증가하면서 Ga 빈자리와 관련된 3.28 eV DAP 신호가 증가하는 것을 관측하였다. 이들 결과로부터 GaN 나노선의 SF 발광 신호관련 원인에 대하여 논의 하였다. AFM을 이용한 I-V 측정으로부터 성장조건 변화에 따른 GaN 나노선 및 p-n 접합 나노선의 전도 특성을 조사하여 나노선의 소자 응용에 대한 기본적인 물리특성을 규명하였다.

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Purification and Characterization of Phenoxazinone Synthase from Streptomyces sp. V-8 Mutant Producing Adenoside Deaminase Inhibitor (아데노신 탈아미노화 효소 억제제를 생산하는 Streptomyces sp. V-8의 변이종으로부터 페녹사지논 합성효소의 분리 및 특성)

  • 김경자;조성진
    • YAKHAK HOEJI
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    • v.43 no.1
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    • pp.68-76
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    • 1999
  • Phenoxazinone synthase catalyzes the oxidative condensation of two molecules of substituted o-aminophenol to the phenoxazinone chromophore of actinomycin. Mutant strain, Streptomyces sp. V-8-M-1 producing higher phenoxazinone synthase, was obtained from Streptomyces sp. V-8 by treatment of N-methyl-N'-nitro-N-nitrosoguanidine. The phenoxazinone synthase was purified from extract of mutant strain of Streptomyces sp. V-8-M-l by successive steps of streptomycin sulfate, ammonium sulfate precipitation. DEAE-cellulose and Sephadex G-200 column chromatography. Molecular weight of the enzyme was 360,000 daltons. The enzyme was composed of octamer of a single subunit of 45,000 daltons. The Km value and Vmax value for 3-HAA were $14.9{\;}{\mu}M$ and 9.5 mg/U, respectively. The optimal pH and temperature for the enzyme activity were 9.0 and $25~30^{\circ}C$, respectively. Treatment of the enzyme with group specific reagents, phenylglyoxal, p-hydroxymercury-benzoate, Nbromosuccinimide, 5.5'-dithiobis-nitrobenzoic acid and ethylmaleimide resulted in loss of enzyme activity, which shows arginine and cysteine residues are at or near the active site.

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SHARP ORE-TYPE CONDITIONS FOR THE EXISTENCE OF AN EVEN [4, b]-FACTOR IN A GRAPH

  • Cho, Eun-Kyung;Kwon, Su-Ah;O, Suil
    • Journal of the Korean Mathematical Society
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    • v.59 no.4
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    • pp.757-774
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    • 2022
  • Let a and b be positive even integers. An even [a, b]-factor of a graph G is a spanning subgraph H such that for every vertex v ∈ V (G), dH(v) is even and a ≤ dH(v) ≤ b. Let κ(G) be the minimum size of a vertex set S such that G - S is disconnected or one vertex, and let σ2(G) = minuv∉E(G) (d(u)+d(v)). In 2005, Matsuda proved an Ore-type condition for an n-vertex graph satisfying certain properties to guarantee the existence of an even [2, b]-factor. In this paper, we prove that for an even positive integer b with b ≥ 6, if G is an n-vertex graph such that n ≥ b + 5, κ(G) ≥ 4, and σ2(G) ≥ ${\frac{8n}{b+4}}$, then G contains an even [4, b]-factor; each condition on n, κ(G), and σ2(G) is sharp.

Fault Diameter of Folded Hyper-Star Interconnection Networks FHS(2n,n) (상호연결망 폴디드 하이퍼-스타 연결망 FHS(2n,n)의 고장 지름)

  • Kim, Jong-Seok;Lee, Hyeong-Ok
    • The KIPS Transactions:PartA
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    • v.17A no.1
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    • pp.1-8
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    • 2010
  • The fault diameter is one of the important measures for transmission rate and reliability of interconnection network. H.-O. Lee et al.[Parallel paths in folded hyper-star graph, Journal of KIPS, Vol.6, No.7, pp.1756-1769, 1999] suggested the node-disjoint paths of FHS (2n,n), and proved that the fault diameter of FHS(2n,n) is less than 2n-1. In this paper, we suggest an advanced node-disjoint paths of FHS(2n,n). We also prove that the wide diameter of FHS(2n,n) is dist(U,V)+4, and the fault diameter of FHS(2n,n) is less than n+2.