• East Asian mathematical journal
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• v.25 no.1
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• pp.89-96
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• 2009

In this paper, we present a unique common xed point theorem under weak compatible mappings of type(A), which extends and generalizes a result of Achari [1].

• International Journal of Fuzzy Logic and Intelligent Systems
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• v.11 no.2
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• pp.108-112
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• 2011

Kaneko et a1.[4] etc many authors extended with multi-valued maps for the notion of compatible maps in complete metric space. Recently, O'Regan et a1.[5] presented fixed point and homotopy results for compatible single-valued maps on complete metric spaces. In this paper, we will establish some common fixed point theorems using compatible maps in intuitionistic fuzzy metric space.

• Journal of the Korean Ceramic Society
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• v.47 no.1
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• pp.19-25
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• 2010

Traditional Kr$\ddot{o}$ger-Vink (K-V) notation defines sites in ionic crystals as interstitial or belonging to host ions. It enables description and calculations of combinations of native and foreign defects, including dopants and substituents. However, some materials exhibit inherently disordered partial occupancy of ions and vacancies, or partial occupancy of two types of ions. For instance, the high temperature disordered phases of $Bi_2O_3$, $Ba_2In_2O_5$, $La_2Mo_2O_9$, mayenite $Ca_{12}Al_{14}O_{33}$, AgI, and $CsHSO_4$ are all good ionic conductors and thus obviously contain charged point defects. But traditional K-V notation cannot account for a charge compensating defect in each case, without resorting to terms like "100% substitution" or "Frenkel disorder". the former arbitrary and awkward and the latter inappropriate. Instead, a K-V compatible nomenclature in which the partially occupied site is defined as the perfect site, has been proposed. I here introduce it thoroughly and provide a number of examples.

• The Pure and Applied Mathematics
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• v.27 no.3
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• pp.109-124
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• 2020

We establish coincidence point theorem for S-non-decreasing mappings under Geraghty-type contraction on partially ordered metric spaces. With the help of obtain result, we derive two dimensional results for generalized compatible pair of mappings F, G : X² → X. As an application, we obtain the solution of integral equation and also give an example to show the usefulness of our results. Our results improve, sharpen, enrich and generalize various known results.

• Korean Journal of Materials Research
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• v.3 no.4
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• pp.410-421
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• 1993

Phase equilibria and reaction paths of the superconducting phases and other compatible phases at $850^{\circ}C$ in the Bi-Sr-Ca-Cu-O system were studied. $Bi_2O_3$ was added to $Sr_2CaCu_2O_x$ by 5% up to 40 mole% Bi in the pseudo-binary $Bi_2O_3-(Sr_2CaCu_2O_x)$ system and the heat treated samples were analysed using XRD. SEM, EDS. and DT A. When Bi contents were greater than 35 mole% Bi, liquid phase was formed which was compatible with $Bi_2Sr_2CaCu_2O_8$ phase. The m.p. of $Bi_2Sr_2CaCu_2O_8$ phase decreased as the content of (Sr+Ca)decreased. $Bi_{2+x}Sr_2CaCu_2O_8$ phase first segregated out of liquid phase around $Bi_2Sr_2CaCu_2O_8$ phase during cooling of liquid phase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.168-168
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• 2008

Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$, and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-Si gate is not compatible with high-k materials for gate-insulator. Poly Si gate with high-k material has some problems such as gate depletion and dopant penetration problems. Therefore, new gate structure or materials that are compatible with high-k materials are also needed. TiN for metal/high-k gate stack is conductive enough to allow a good electrical connection and compatible with high-k materials. According to this trend, the study on dry etching of TiN for metal/high-k gate stack is needed. In this study, the investigations of the TiN etching characteristics were carried out using the inductively coupled $BCl_3$-based plasma system and adding $Cl_2$ gas. Dry etching of the TiN was studied by varying the etching parameters including $BCl_3$/Ar gas mixing ratio, RF power, DC-bias voltage to substrate, and $Cl_2$ gas addition. The plasmas were characterized by optical emission spectroscopy analysis. Scanning electron microscopy was used to investigate the etching profile.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.1-5
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• 2021

Field-effect transistors based on solution-processed metal oxide semiconductors has attracted huge attention due to their intrinsic characteristics of optical and electrical characteristics with benefits of simple and low-cost process. Especially, spray-pyrolysis has shown excellent device performance which compatible to vacuum-processed Field-effect transistors. However, the high annealing temperature for crystallization of MOS and narrow range of precursors has impeded the progress of the technology. Here, we demonstrated the nc-ZnO/ZnO films performed by spray-pyrolysis with incorporating ZnO nanoparticles into typical ZnO precursor. The films exhibit preserving morphological properties of poly-crystalline ZnO and enhanced electrical characteristics with potential for low-temperature processability. The influence of nanoparticles within the film was also researched for realizing ZnO films providing good quality of performance.

• Bulletin of the Korean Chemical Society
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• v.34 no.7
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• pp.2176-2182
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• 2013

A novel sol-gel method was implied to prepare CuO-doped ZnO nanoparticles. XRD and SEM techniques were used to characterize the CuO-doped ZnO sample. The photocatalytic degradation of Lidocaine HCl was investigated by two methods. The degradation was studied under different conditions such as the amount of photocatalyst, pH of the system, initial concentration, presence of electron acceptor, and presence of anions. The results showed that they strongly affected the photocatalytic degradation of Lidocaine HCl. The photodegradation efficiency of drug increased with the increase of the irradiation time. After 6 h irradiation with 400-W mercury lamp, about 93% removal of Lidocaine HCl was achieved. The degree of photodegradation obtained by Taguchi method compatible with the trial-and-error method showed reliable results.

• Proceedings of the SCSK Conference
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• 2003.09b
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• pp.392-404
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• 2003

A new technology to achieve o/w microemulsions allows the formulation of transparent products with low surfactant content. The PIT Nanotechnology approach gives cosmetic/pharmaceutical o/w microemulsions in one step with a broad variety of surfactants, cosurfactants and oil phases.

• The Pure and Applied Mathematics
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• v.23 no.1
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• pp.35-51
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• 2016

We establish coincidence point theorem for g-nondecreasing mappings satisfying generalized nonlinear contraction on partially ordered metric spaces. We also obtain the coupled coincidence point theorem for generalized compatible pair of mappings F, G : X² → X by using obtained coincidence point results. Furthermore, an example is also given to demonstrate the degree of validity of our hypothesis. Our results generalize, modify, improve and sharpen several well-known results.