• Electrical & Electronic Materials
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• v.9 no.1
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• pp.9-17
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• 1996

Plasma enhanced chemical vapor deposition (PECVD) allows low temperature processing and so it is widely used, but it causes instability of devices due to serious amount of impurities within the film. In this paper, electrical and chemical characteristics of the PECVD oxynitride film formed by different N$_{2}$O to N$_{2}$O+NH$_{3}$ gas ratio is studied. It has been found that hydrogen concentration of PECVD oxynitride film was decreased from 4.25*10$^{22}$ [cm$^{-2}$ ] to 1.18*10$^{21}$ [cm$^{-2}$ ] according to the increase of N$_{2}$O gas. It was also found that PECVD oxynitride films have low trap density in the oxide and interface in comparison with PECVD nitroxide films, and has higher refractive index and capacitance than oxide films. In particular, oxynitride film formed in gas ratio of N$_{2}$O/(N$_{2}$O+NH$_{3}$)= 0.88 shows increased capacitance and decreased leakage current due to small portion of hydrogen in oxide and the accumulation of nitrogen about 4[atm.%] at the interface.

• Korean Chemical Engineering Research
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• v.47 no.1
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• pp.96-104
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• 2009

In order to lower a reaction temperature with high conversions for simultaneous catalytic reduction of NO and $N_2O$ over Pd-Rh supported mixed metal oxide honeycomb catalysts, $H_2$ or CO was utilized as a reductant. When using the reductants, the effects of reaction conditions were examined in NO and $N_2O$ conversions, where reaction temperatures, concentrations of the reductants and oxygen and the concentration ratio of $N_2O$ to NO were varied. In using $H_2$ reductant, larger than 50% of NO and $N_2O$ conversions was observed at the temperatures below $200^{\circ}C$ in absence of $O_2$. In using CO reductant, NO and $N_2O$ conversions increased from the temperatures higher than $200^{\circ}C$ and $300^{\circ}C$, respectively. However, in use of both reductants, NO and $N_2O$ conversions decreased with increasing oxygen concentration. As a result, $H_2$ reductant could reduce simultaneously NO and $N_2O$ at relatively lower reaction temperature than CO. Also, NO and $N_2O$ conversions were less influenced by using $H_2$ reductant than CO one. Concentration ratio between NO and $N_2O$ did not affect their conversions regardless the type of reductants. Pretreatment of the catalyst in $H_2$ was more effective in simultaneous reduction of NO and $N_2O$ at low reaction temperature than that in $O_2$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.1029-1034
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• 2003

The Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{x}$, superconducting thin films arc fabricated by using the sputtering and evaporation method. Because we confirmed the sticking ratio of Bi element in the Bi$_2$Sr$_2$Ca$_{n}$Cu$_{n+1}$ O$_{x}$ superconducting thin film fabricated by using the sputtering method was much lower than the expected value, to get the enough number of the flakes of Bi, faraday cup was used to evaporate Bi clement. As a result of the fabrication, Bi 2201 and Bi 2212 single phases could be made by the optima of deposition condition. And we confirmed the sticking coefficient of Bi element was clearly related to the temperature change of the substrate and the generation of Bi22l2 phase

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.5
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• pp.187-191
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• 2007

The device performance of ZnO-thin film transistors(ZnO-TFTs) with gate dielectrics of $SiO_2,\;SiN_x$ and Polyvinylphenol(PVP) having a bottom gate configuration were investigated. ZnO-TFTs can induce high device performance with low intrinsic carrier concentration of ZnO only by controlling gas flow rates without additional doping or annealing processes. The field effect mobility and on/off ratio of ZnO-TFTs with $SiN_x$ were $20.2cm^2V^{-1}s^{-1}\;and\;5{\times}10^6$ respectively which is higher than those previously reported. The device adoptable values of the mobility of $1.37cm^2V^{-1}s^{-1}$ and the on/off ratio of $6{\times}10^3$ were evaluated from the device with organic PVP dielectric.

• Clean Technology
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• v.17 no.2
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• pp.134-141
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• 2011

The effects of the compounds and concentrations of nitrogenous electron acceptor, the ratio of electron donor/electron acceptor (C/N), and the complexity of electron donor on the emission of $N_2O$ during wastewater denitrification were quantitatively investigated in this study. The higher ${NO_3}^-$ and ${NO_2}^-$ concentrations, the more $N_2O$ emission was observed. ${NO_2}^-$ has strong effect on $N_2O$ emission as it emitted morc $N_2O$ than ${NO_3}^-$, 50 mg/L of ${NO_2}^-$-N gave the highest conversion (9.3%) and yield (9.8%) of $N_2O$ while ${NO_3}^-$-N (50 mg/L) gave 5.6% conversion and 11.0% yield. Lower C/N ratio decreases nitrogen removal efficiency, but it increases the conversion of $N_2O$ because of the incomplete denitrification by the limited organic carbon. When real domestic wastewater is used as the electron donor of the denitrification, $N_2O$ emission is reduced to 1/10 of the emission when single carbon (acetate) is used. It is thought that multiple carbon source utilizes many denitrification pathways and it seems to be helpful for the reduction of $N_2O$ emission.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.6
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• pp.49-57
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• 2015

This paper presents the discharge characteristics and economic feasibility of a Dry $Air/O_2$ and a $N_2/O_2$ mixture gas in order to review $SF_6$ alternative. From AC discharge experiment in an quasi-uniform field, it was found that the optimal $N_2/O_2$ mixing ratio which breakdown voltage and surface flashover voltage were the highest was 70/30 and that the pressure dependence on the breakdown voltage was higher than that of the surface flashover voltage in the Dry $Air/O_2$ and the $N_2/O_2$ mixture gas. The mixing ratio (70/30) and the tendency of the pressure dependence were described in detail based on physical factors (impact ionization coefficient, electron attachment coefficient, secondary electron emission coefficient) involved in discharge mechanism and a electron source, respectively. In addition, the performance insulation and the economic feasibility of the Dry $Air/O_2$ and the $N_2/O_2$ mixture gas were discussed so that Dry $Air/O_2$ mixture gaswas more suitable than $N_2/O_2$ mixture gas to the $SF_6$ alternative.

• Korean Journal of Soil Science and Fertilizer
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• v.46 no.6
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• pp.570-574
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• 2013

This study was conducted to assess $N_2O$ emissions in agricultural soils of Korea under the 1996 IPCC (Intergovernmental Panel on Climate Change) methodology. $N_2O$ emissions in agricultural soils were calculated the sum of direct emission and indirect emission by the N sources and emissions by field burning of crop residues. $N_2O$ emission was highest in animal manure as 1,547 $CO_2$-eq Gg. Indirect emissions by atmospheric deposition and leaching and runoff were 1,463 and 1,753 $CO_2$-eq Gg, respectively. $N_2O$ emission by field burning of crop residues was highest in pepper due to the residue/crop ratio and field burning ratio.

• Journal of the Korean Chemical Society
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• v.18 no.4
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• pp.267-271
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• 1974

The tetradentate schiff base, N,N'-bis(salicylaldehyde)-ethylene diimine has been reacted with a series of Mo(IV), Mo(V), Mo(IV), and Mo(III) oxidation states to form new Complexes; $[MoO_2(C_{16}H_{14}O_2N_2)], (MoO(C_{16}H_{14}O_2N_2)]_2O, (Mo(SCN)(C_{16}H_{14}O_2N_2)]_2O, and (Mo(H_2O)(C_{16}H_{14}O_2N_2)]_2O.$ These complexes have hexa coordinated configurations and the mole ratio of these ions to the ligand was 1:1. These complexes have been identified by visible spectra, infrared specra, T.G.A., D.T.A., and elemental analysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.315-315
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• 2013

We report the electronic structure modification in the swift heavy ion (SHI) irradiated N-doped ZnO thin films prepared by RF sputtering from ZnO target in different ratio of Ar/$N_2$ gas mixture using highly pure $N_2$ gas. The different N-ZnO thin lms were then irradiated with 120 MeV Ag ion beam with different doses ranging from $1{\times}10^{11}$ to $5{\times}10^{12}$ ions/$cm^2$ and characterized by XRD and near edge X-ray absorption ne structure (NEXAFS) at N and O K-edges. The NEXAFS measurements provide direct evidence of O 2p and Zn 3d orbital hybridization and also the bonding of N ions with Zn and O ions. The minimum value of resistivity of $790{\Omega}cm$, a Hall mobility of $22cm^2V^-1s^-1$ and the carrier concentration of $3.6{\times}10^{14}cm^{-3}$ were yielded at 75% $N_2$. X-ray diffraction (XRD) measurements revealed that N-doped ZnO films had the preferential orientation of (002) plane for all samples, while crystallinity start decreasing at 32.5% $N_2$. The average crystallite size varies from 5.7 to 8.2 nm for 75% and then decreases to 7.8 nm for 80% $Ar:N_2$ ratio.

• Bulletin of the Korean Chemical Society
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• v.15 no.8
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• pp.669-673
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• 1994

Coordination isomers of cis-(N-N)Pt(Glu) prepared by reaction of cis-(N-N)Pt($SO_4$) (N-N=2$NH_3$, ethylenediamine(en),(R,R)-1,2-diaminocyclohexane (DACH), N,N,N',N'-tetramethylethylenediamine (TMEDA)) with barium glutamate in water have been monitored and characterized by $^1H-NMR$, $^{13}C-NMR$, IR, and mass spectra. The reaction at room temperature affords the mixture of O,O'-and N, ${\alpha}$ O-chelated platinum(II) complexes. The O,O'-chelate initially formed isomerized to N,${\alpha}$O-chelate on standing for a long time or increasing temperature. The ratio of the two isomers at room temperature depends on the nature of the nitrogen donor coligand (N-N).