• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.436-440
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• 2003

The (S $r_{0.85}$C $a_{0.15}$)Ti $O_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/ $SiO_2$/Si) using RF sputtering method according to the deposition condition. The optimum conditions of RF power and Ar/ $O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[$\AA$/min] at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films were observed above 200[kHz]. SCT thin films used in this study showed the phenomena of dielectric relaxation with the increase of frequency.ncy.

• Journal of the Semiconductor & Display Technology
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• v.6 no.3
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• pp.41-45
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• 2007

The (SrCa)$TiO_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}500[^{\circ}C]$. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$ at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.081 in A/B ratio). The maximum dielectric constant of SCT thin film was obtained by annealing at $600[^{\circ}C]$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.12
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• pp.576-580
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• 2006

The $(Sr_{0.85}Ca_{0.15})TiO_3(SCT)$ thin films were deposited on Pt-coated electrode $(Pt/TiN/SiO_2/Si)$ using RF sputtering method according to the deposition condition. The crystallinity of SCT thin films were increased with increase of deposition temperature in the temperature range of $100{\sim}500[^{\circ}C]$. The optimum conditions of RF power and $Ar/O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about $18.75[{\AA}/min]$ at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The maximum dielectric constant of SCT thin film as obtained by annealing at $600^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.178-178
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• 2010

We have deposited aluminum-doped ZnO thin films on borosilicate glass by atomic layer deposition. Diethylzinc (DEZ) and dimethylaluminum isopropoxide (DMAIP) were used as the metal precursor and the Al-dopant, respectively. Water was used as an oxygen source. DMAIP was successfully used as an aluminum precursor for chemical vapor deposition and ALD. All deposited films showed n-type conduction. The resistivity decreased to a minimum and then increased with increasing the aluminum content. The carrier concentration increased and the carrier mobility decreased with increasing the DMAIP to DEZ pulse ratio. The average optical transmittance was nearly 80 % in the visible part of the spectrum. The absorption edge moved to the shorter wavelength region with increasing the DMAIP to DEZ pulse ratio. Our results indicate that DMAIP is suitable for Al doping of ZnO films.

• Korean Journal of Materials Research
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• v.14 no.9
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• pp.627-633
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• 2004

Lithium titanate whiske($Li_{x}Ti_{4}O_9$) was prepared by an ion-exchange reaction. To this end, the initial material, potassium tetratitanate ($K_{2}Ti_{4}O_9{\cdot}nH_{2}O$) was prepared by calcination of a mixture of $K_{2}CO_3\;and\;TiO_2$ with a molar ratio of 2.8 at $1050^{\circ}C$ for 3 h, followed by boiling water treatment of the calcined products for 10 h. Fibrous potassium tetratitanate could be transformed into layered hydrous titanium dioxide ($H_{2}Ti_{4}O_9{\cdot}nH_{2}O$) through an exchange of $K^{+}\;with\;H^{+}$ using 0.075 M HCl. Also, lithium titanate whisker was finally prepared as $Li^{+}\;and\;H^{+}$ ions were exchanged by adding 20 mL of a mixture solution of LiOH and $LiNO_3$ to 1g whisker and stirring for $5\~15$ days. The average length and diameter of the $Li_{x}Ti_{4}O_9$ whiskers were $10\~20{\mu}m\;and\;1\~3{\mu}m$, respectively.

• Journal of the Korean Society of Radiology
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• v.13 no.2
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• pp.261-270
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• 2019

The separation permeation characteristics of $N_2-O_2$ gas in air at cell membrane model of skin which irradiated by high energy electron(linac 6 MeV) were investigated. The cell membrane model of skin used in this experiment was a sulfonated polydimethyl siloxane(PDMS) non-porous membrane. The pressure range of $N_2$ and $O_2$ gas were appeared from $1kg_f/cm^2$ to $6kg_f/cm^2$. In this experiment(temperature $36.5^{\circ}C$), the permeation change of $N_2$ and $O_2$ gas in non-porous membrane by non-irradiation were found to be $1.19{\times}10^{-4}-2.43{\times}10^{-4}$, $1.72{\times}10^{-4}-2.6{\times}10^{-4}cm^3(STP)/cm^2{\cdot}sec{\cdot}cmHg$, respectively. That of $N_2$ and $O_2$ gas in non-porous membrane by irradiation were found to be $0.19{\times}10^{-4}-0.56{\times}10^{-4}$, $0.41{\times}10^{-4}-0.76{\times}10^{-4}cm^3(STP)/cm^2{\cdot}sec{\cdot}cmHg$, respectively. The irradiated membrane was significantly decreased about 4-10 times than membrane which was not irradiated. And ideal separation factor of $N_2$ and $O_2$ gas by non-irradiation was found to be from 1.32 to 0.42 and that of $N_2$ and $O_2$ gas by irradiation was found to be from 0.237 to 0.125. The irradiated membrane was significantly decreased about 4-5 times than membrane which was not irradiated. When the operation change(cut) and pressure ratio(Pr) by non-irradiation were about 0, One was increased to the oxygen enrichment and the other was decreased to the oxygen enrichment. The irradiated membrane was significantly decreased about 4-19 times than membrane which was not irradiated. As the pressure of $N_2$ and $O_2$ gas was increased, the selectivity was decreased. As separation permeation characteristics of $N_2-O_2$ gas in cell membrane model of skin were abnormal, cell damages were appeared at cell.

• Applied Chemistry for Engineering
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• v.5 no.3
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• pp.478-500
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• 1994

The preparation of potassium hexatitanate whisker by flux method was investigated. In this study, 8 types synthesis of flux such as $V_2O_5$, $Bi_2O_3$, $B_2O_3$, $Pb_3O_4$, KCl, $K_4P_2O_7$, $K_2WO_4$ and $K_2MoO_4$ were tested to find a suitable flux for the synthesis of potassium hexatitanate whisker. Effects of various reaction variables such as reaction temperature, time, $TiO_2$ mole ratio to $K_2CO_3$, flux mole ratio to the mixture of $K_2CO_3$ and $TiO_2$, and slow-cooling treatment on the crystallization of potassium hexatitanate whisker were investigated. $K_2MoO_4$ and $K_2WO_4$ were better flux than others tested for the synthesis of potassium hexatitanate. In the presence of $K_2MoO_4$ or $K_2WO_4$ flux, the optimum condition for the synthesis of potassium hexatitanate whisker was that reaction temperature of $1000{\sim}1100^{\circ}C$, reaction time of 5 hours, $TiO_2$ mole ratio to $K_2CO_3$ of 6.0, and flux mole ratio to mixture ($K_2O+nTiO_2$) of 4.0. Slow-cooling treatment showed good effect on the growth of long fibrous potassium hexatitanate.

• Journal of the Korean Ceramic Society
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• v.47 no.5
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• pp.467-473
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• 2010

The objective of this study is to prepare lead-free thick film resistor (TFR) paste compatible with AlN substrate for hybrid microelectronics. For this purpose, CaO-ZnO-$B_2O_3-Al_2O_3-SiO_2$ glass system was chosen as a sintering aid of $RuO_2$. The effects of the weight ratio of CaO to ZnO in glass composition, the glass content and the sintering temperature on the electrical properties of TFR were investigated. $RuO_2$ as a conductive and glass powder were dispersed in an organic binder to obtain printable paste and then thick-film was formed by screen printing, followed by sintering at the range between $750^{\circ}C$ and $900^{\circ}C$ for 10 min with a heating rate of $50^{\circ}C$/min in an ambient atmosphere. The addition of ZnO to glass composition and sintering at higher temperature resulted in increasing sheet resistance and decreasing temperature coefficient of resistance. Using $RuO_2$-based resistor paste containing 40 wt%glass of CaO-20.5%ZnO-25%$B_2O_3$-7%$Al_2O_3$-15%$SiO_2$ composition, it is possible to produce thick film resistor on AlN substrate with sheet resistance of $10.6\Omega/\spuare$ and the temperature coefficient of resistance of 702ppm/$^{\circ}C$ after sintering at $850^{\circ}C$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.601-608
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• 2014

In this paper, we have characterized the electrical properties related to gate leakage current in AlGaN/GaN MISHFETs with varying the thickness (0 to 10 nm) of $Al_2O_3$ gate insulator which also serves as a surface protection layer during high-temperature RTP. The sheet resistance of the unprotected TLM pattern after RTP was rapidly increased to $1323{\Omega}/{\square}$ from the value of $400{\Omega}/{\square}$ of the as-grown sample due to thermal damage during high temperature RTP. On the other hand, the sheet resistances of the TLM pattern protected with thin $Al_2O_3$ layer (when its thickness is larger than 5 nm) were slightly decreased after high-temperature RTP since the deposited $Al_2O_3$ layer effectively neutralizes the acceptor-like states on the surface of AlGaN layer which in turn increases the 2DEG density. AlGaN/GaN MISHFET with 8 nm-thick $Al_2O_3$ gate insulator exhibited extremely low gate leakage current of $10^{-9}A/mm$, which led to superior device performances such as a very low subthreshold swing (SS) of 80 mV/dec and high $I_{on}/I_{off}$ ratio of ${\sim}10^{10}$. The PF emission and FN tunneling models were used to characterize the gate leakage currents of the devices. The device with 5 nm-thick $Al_2O_3$ layer exhibited both PF emission and FN tunneling at relatively lower gate voltages compared to that with 8 nm-thick $Al_2O_3$ layer due to thinner $Al_2O_3$ layer, as expected. The device with 10 nm-thick $Al_2O_3$ layer, however, showed very high gate leakage current of $5.5{\times}10^{-4}A/mm$ due to poly-crystallization of the $Al_2O_3$ layer during the high-temperature RTP, which led to very poor performances.

• Electrical & Electronic Materials
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• v.7 no.5
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• pp.403-408
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• 1994

Dielectric and structural properties of $Ba_{1-x}$(Z $n_{1}$3/T $a_{2}$3/) $O_{3}$+1 mol% Mn $O_{2}$ (x=0, 0.01, 0.02, 0.03, 0.04) ceramics was investigated at microwave frequencies. With $Ba_{+2}$ shortage, the sinterability and the unloaded Q( $Q_{u}$) were much improved, and the ordering in B site and the lattice distortion was greatly enhanced and the structure approached the completely ordered structure. $Q_{u}$ was strongly correlated with these factors such as ordering ratio, lattice distortion and sinterability, and had the maximum value of 7500 at x=0.01. The dielectric constant was near 30 and the temperature coefficient of the resonant frequency was 2 ppm/.deg. C at x=0.01.1.1.1.