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http://dx.doi.org/10.4191/KCERS.2010.47.5.467

Electrical Properties of Eco-Friendly RuO2-Based Thick-Film Resistors Containing CaO-ZnO-B2O3-Al2O3-SiO2 System Glass for AlN Substrate  

Kim, Min-Sik (Engineering Ceramics Center, Korea Institute of Ceramic Engineering and Technology)
Kim, Hyeong-Jun (Engineering Ceramics Center, Korea Institute of Ceramic Engineering and Technology)
Kim, Hyung-Tae (Engineering Ceramics Center, Korea Institute of Ceramic Engineering and Technology)
Kim, Dong-Jin (KMC Technology)
Kim, Young-Do (Materials Science & Engineering, Hanyang University)
Ryu, Sung-Soo (Engineering Ceramics Center, Korea Institute of Ceramic Engineering and Technology)
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Abstract
The objective of this study is to prepare lead-free thick film resistor (TFR) paste compatible with AlN substrate for hybrid microelectronics. For this purpose, CaO-ZnO-$B_2O_3-Al_2O_3-SiO_2$ glass system was chosen as a sintering aid of $RuO_2$. The effects of the weight ratio of CaO to ZnO in glass composition, the glass content and the sintering temperature on the electrical properties of TFR were investigated. $RuO_2$ as a conductive and glass powder were dispersed in an organic binder to obtain printable paste and then thick-film was formed by screen printing, followed by sintering at the range between $750^{\circ}C$ and $900^{\circ}C$ for 10 min with a heating rate of $50^{\circ}C$/min in an ambient atmosphere. The addition of ZnO to glass composition and sintering at higher temperature resulted in increasing sheet resistance and decreasing temperature coefficient of resistance. Using $RuO_2$-based resistor paste containing 40 wt%glass of CaO-20.5%ZnO-25%$B_2O_3$-7%$Al_2O_3$-15%$SiO_2$ composition, it is possible to produce thick film resistor on AlN substrate with sheet resistance of $10.6\Omega/\spuare$ and the temperature coefficient of resistance of 702ppm/$^{\circ}C$ after sintering at $850^{\circ}C$.
Keywords
Thick film resistor; $RuO_2$; AlN; Lead-free; CaO-ZnO-$B_2O_3-Al_2O_3-SiO_2$ glass;
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