• The Transactions of the Korea Information Processing Society
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• v.5 no.8
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• pp.2027-2040
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• 1998

In this paper, we present efficient reconfigurable mesh algorithms for transforming between a binary image and its corresponding boundary code. These algorithms use $n\timesn\timesn$ processors when the size of the binary image is $n\timesn$. Recent published results show that these transformations can be done in O(1) time using $O(n^4)$ processors. The number of processors used by these algorithms is very large compared to the number of pixels in the image. Here, we present fast transformation algorithms which use $n^3 processors only. the transformation from a houndary code to a binary image takes O(1) time, and the converse transformation takes O(log n) time.

• Journal of applied mathematics & informatics
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• v.19 no.1_2
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• pp.77-92
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• 2005

An efficient parallel algorithm is presented to find a maximum weight independent set of a permutation graph which takes O(log n) time using O($n^2$/ log n) processors on an EREW PRAM, provided the graph has at most O(n) maximal independent sets. The best known parallel algorithm takes O($log^2n$) time and O($n^3/log\;n$) processors on a CREW PRAM.

• Journal of the Korean institute of surface engineering
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• v.44 no.5
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• pp.201-206
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• 2011

Fe-2%Mn-0.5%Si alloys were corroded at 600, 700 and $800^{\circ}C$ for up to 70 h in 1 atm of $N_2$ gas, or 1 atm of $N_2/H_2O$-mixed gases, or 1 atm of $N_2/H_2O/H_2S$-mixed gases. Oxidation prevailed in $N_2$ and $N_2/H_2O$ gases, whereas sulfidation dominated in $N_2/H_2O/H_2S$ gases. The oxidation/sulfidation rates increased in the order of $N_2$ gas, $N_2/H_2O$ gases, and, much more seriously, $N_2/H_2O/H_2S$ gases. The base element of Fe oxidized to $Fe_2O_3$ and $Fe_3O_4$ in $N_2$ and $N_2/H_2O$ gases, whereas it sulfidized to FeS in $N_2/H_2O/H_2S$ gases. The oxides or sulfides of Mn or Si were not detected from the XRD analyses, owing to their small amount or dissolution in FeS. Since FeS was present throughout the whole scale, the alloys were nonprotective in $N_2/H_2O/H_2S$ gases.

• Environmental Engineering Research
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• v.18 no.1
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• pp.21-28
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• 2013

In this study, the applicability of visible light-emitting-diodes (LEDs) to the photocatalytic degradation of indoor-level trichloroethylene (TCE) and perchloroethylene (PCE) over N-doped $TiO_2$ (N-$TiO_2$) was examined under a range of operational conditions. The N-$TiO_2$ photocatalyst was calcined at $650^{\circ}C$ (labeled N-650) showed the lowest degradation efficiencies for TCE and PCE, while the N-$TiO_2$ photocatalysts calcined at $350^{\circ}C$, $450^{\circ}C$, and $550^{\circ}C$ (labeled as N-350, N-450, and N-550, respectively) exhibited similar or slightly different degradation efficiencies to those of TCE and PCE. These results were supported by the X-ray diffraction patterns of N-350, N-450, N-550, and N-650. The respective average degradation efficiencies for TCE and PCE were 96% and 77% for the 8-W lamp/N-$TiO_2$ system, 32% and 20% for the violet LED/N-$TiO_2$ system, and ~0% and 4% for the blue LED/N-$TiO_2$ system. However, the normalized photocatalytic degradation efficiencies for TCE and PCE for the violet LED-irradiated N-$TiO_2$ system were higher than those from the 8-W fluorescent daylight lamp-irradiated N-$TiO_2$ system. Although the difference was not substantial, the degradation efficiencies exhibited a decreasing trend with increasing input concentrations. The degradation efficiencies for TCE and PCE decreased with increasing air flow rates. In general, the degradation efficiencies for both target compounds decreased as relative humidity increased. Consequently, it was indicated that violet LEDs can be utilized as energy-efficient light sources for the photocatalytic degradation of TCE and PCE, if operational conditions of N-$TiO_2$ photocatalytic system are optimized.

• Korean Journal of Mathematics
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• v.25 no.3
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• pp.349-358
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• 2017

The cyclic group $C_n={\langle}(12{\cdots}n){\rangle}$ acts on the set $(^{[n]}_k)$ of all k-subsets of [n]. In this action of $C_n$ the number of orbits of size d, for d | n, is $$O^{n,k}_d={\frac{1}{d}}{\sum\limits_{{\frac{n}{d}}{\mid}s{\mid}n}}{\mu}({\frac{ds}{n}})(^{n/s}_{k/s})$$. Stanton and White [6] generalized the above identity to construct the orbit polynomials $$O^{n,k}_d(q)={\frac{1}{[d]_{q^{n/d}}}}{\sum\limits_{{\frac{n}{d}}{\mid}s{\mid}n}}{\mu}({\frac{ds}{n}})[^{n/s}_{k/s}]_{q^s}$$ and conjectured that $O^{n,k}_d(q)$ have non-negative coefficients. In this paper we give a constructive proof for the positivity of coefficients of the orbit polynomial $O^{n,2}_d(q)$.

• Journal of the Korean Magnetics Society
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• v.10 no.4
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• pp.165-170
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• 2000

The purpose of this study is to investigate the effect of annealing conditions on physical and magnetic properties of Fe-Hf-N thin films. When the thin films were annealed in $N_2$ gas, a surface oxide layer, comprised of Fe$_2$O$_3$ and Fe$_3$O$_4$, was formed at the surface of the thin films and a Fe-Hf-O-N layer was also formed under this surface oxide layer. It was found that the thicknesses of the surface oxide layer and the Fe-Hf-O-N layer increased, as the annealing temperature increased. It was also found that if the thickness of the surface oxide layer was excluded in the property calculation, the soft magnetic properties of the annealed thin films were not much different from those of the as-deposited thin films. Therefore, it was suggested that the Fe-Hf-O-N layer formed under the surface oxide layer did not lose significantly the soft magnetic properties of the Fe-Hf-N films and the Fe-Hf-N films annealed in $N_2$gas showed the soft magnetic properties of the Fe-Hf-N and Fe-Hf-O-N multi-layers.

• Proceedings of the Korean Society of Crop Science Conference
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• 2017.06a
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• pp.314-314
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• 2017

Anthropogenic activities have increased the concentrations of greenhouse gases, such as $CO_2$, $CH_4$, $N_2O$, HFCs, $SF_6$, and PFCs, in the atmosphere. Among others, $N_2O$ is well known as an important greenhouse gas accounting for 7.9% of the total greenhouse effect and the effect of its emission is 310 times greater than that of $CO_2$. Agricultural $N_2O$ emissions are now thought to contribute to about 60% of the global anthropogenic $N_2O$ emission, which have been increased primarily due to fertilizer N consumption and manure management. Therefore, the reduction of $N_2O$ emissions in agriculture is being required. This study was conducted to determine the variation of $N_2O$ emissions by no-tillage (NT) and conventional tillage (CT) practices in the cultivation of soybean from the sandy loam soils under the different kinds of fertilizer treatments June through September 2016 in Cheong-ju, Republic of Korea. An experimental plot, located in the temperate climate zone, was composed of two main plots that were NT and CT, and were divided into four plots, respectively, in accordance with types of fertilizers (chemical fertilizer, liquid pig manure, hairy vetch and non-fertilizer). Among all the treatments, $N_2O$ emission was the highest in August and the lowest in June. When $N_2O$ emissions were evaluated during the growing season (June to September) in all fertilizer treatments, NT with hairy vetch treatment emitted the highest $N_2O$ emission in August, whereas, $N_2O$ emissions was the lowest in NT with non-fertilizer treatment in June, respectively (p = 0.05). Based on the cumulative amount of $N_2O$ emissions during the growing season of soybean, NT had lower $N_2O$ emission than CT by 0.01 - 0.02 kg $N_2O$, although NT had higher $N_2O$ emission than CT by 0.03 kg $N_2O$ in only the chemical fertilizer treatments. As a result, it seems that the applications of liquid pig manure and hairy vetch rather than chemical fertilizer could decrease the $N_2O$ emission in NT, compared to CT.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.32 no.5B
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• pp.257-269
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• 2007

This paper proposes a novel method to perform a quantitative analysis of message complexity and applies this method in comparing the message complexity among the mobile ad hoc network (MANET) address autoconfiguration protocols (AAPs). To obtain the upper bound of the message complexity of the protocols, the O-notation of a MANET group of N nodes has been applied. The message complexity of the single node joining case in Strong DAD, Weak DAD with proactive routing protocols (WDP), Weak DAD with on-demand routing protocols (WDO), and MANETconf has been derived as n(mO(N)+O(t)), n(O(N)+O(t)), n(O(N)+2O(t)), and nO((t+1)N)+O(N)+O(2) respectively. In order to verify the bounds, analytical simulations that quantify the message complexity of the address autoconfiguration process based on the different coflict probabilities are conducted.

• Journal of the Korean institute of surface engineering
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• v.37 no.6
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• pp.307-312
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• 2004

Extensive efforts have been made in an attempt to utilize photocatalytic properties of $TiO_2$ in visible range. $TiO_2$ and TiO-N thin films were made by the DC reactive magnetron sputtering method at $300^{\circ}C$. Various gases (Ar, $O_2$ and $N_2$) were used and Ti target was impressed by 0.6 kW-5.8 kW power range. The hysteresis phenomenon of the $TiO_2$ thin film as a function of the discharge voltage characteristic was observed to be higher as applied power increases. That of TiO-N thin film was occurred at the 5.8 kW power. The cross section and surface roughness of thin films were observed by FE-SEM and AFM. Average surface roughness of TiO-N thin film was observed as $15.9\AA$ and that of $TiO_2$ as $13.2\AA$. The crystal phases of both $TiO_2$ and TiO-N thin films were found to be anatase structure. The atomic $\beta$-N (396 eV peak in N 1s XPS) was shown in the rutile crystal of TiO-N and was considered acting as the origin of wavelength shift to the visible light.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.405-405
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• 2007

ZnO는 상온에서 3.38eV의 넓은 밴드갭을 가지는 직접천이형 반도체이며, 60meV의 큰 엑시톤 결합에너지를 가지는 UV 영역의 광소자로 응용할 수 있는 물질이다. 특히 ZnO를 이용한 LED에 대한 연구가 최근 활발히 이루어지고 있다. 그러나 n-ZnO/p-ZnO 동종접합 다이오드는 p-ZnO의 재현성이 없고, 낮은 정공농도를 보이기 때문에 n-ZnO를 기반으로 한 이종접합 다이오드의 개발이 필요하게 되었다. 특히 n-ZnO/p-Si 이종접합 다이오드는 낮은 구동전압과 제조단가가 저렴하다는 장점이 있다 또한 n-ZnO를 스퍼터링을 이용하여 증착할 경우 고온에서 성장함에도 불구하고 케리어 농도 및 이동도가 매우 낮다. 반면 MOCVD 법은 대면적 증착이 가능하고 비교적 낮은 온도에서 박막을 성장할 수 있고 전기적 특성 또한 매우 우수하다. 본 연구에서는 p-Si 기판위에 MOCVD 를 이용하여 n-ZnO를 증착하고, 이를 열처리하여 n-ZnO/p-Si 이종접합 다이오드의 특성 변화를 관찰하고자 하였다. n-ZnO/p-Si 시편을 $N_2$ 및 $O_2$ 가스 분위기에서 열처리한 후 소자의 광학적, 전기적 특성을 관찰하였다.