• Korean Journal of Metals and Materials
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• v.50 no.12
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• pp.949-953
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• 2012

$MgH_2$ was employed as a starting material instead of Mg in this work. A sample with a composition of 94 wt% $MgH_2-6$ wt% Ni (called $MgH_2-6Ni$) was prepared by reactive mechanical grinding. The hydriding and dehydriding properties were then examined. An $MgH_2-Ni$ hydrogen storage alloy that does not require an activation process was developed. The alloy was prepared in a planetary ball mill by grinding for 4 h at a ball disc revolution speed of 250 rpm under a hydrogen pressure of about 12 bar. The sample absorbed 3.74 wt% H for 5 min, 4.07 wt% H for 10 min, and 4.41 wt% H for 60 min at 573 K under 12 bar $H_2$, and desorbed 0.93 wt% H for 10 min, 1.99 wt% H for 30 min, and 3.16 wt% H for 60 min at 573 K under 1.0 bar $H_2$. $MgH_2-6Ni$ after reactive mechanical grinding contained ${\beta}-MgH_2$ (a room temperature form of $MgH_2$), Ni, ${\gamma}-MgH_2$ (a high pressure form of $MgH_2$), and a very small amount of MgO. Reactive mechanical grinding of Mg with Ni is considered to facilitate nucleation, and to reduce the particle size of Mg. $Mg_2Ni$ formed during reactive mechanical grinding also increases the hydriding and dehydriding rates of the sample.

• Journal of Hydrogen and New Energy
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• v.30 no.3
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• pp.220-226
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• 2019

Magnesium hydride has a high hydrogen storage capacity (7.6 wt.%), and is cheap and lightweight, thus advantageous as a hydrogen storage alloy. However, Mg-based hydrides undergo hydrogenation/dehydrogenation at high temperature and pressure due to their thermodynamic stability and high oxidation reactivity. MWCNTs exhibit prominent catalytic effect on the hydrogen storage properties of $MgH_2$, weakening the interaction between Mg and H atoms and reducing the activation energy for nucleation of the metal phase by co-milling Mg with carbon nanotubes. Therefore, it is suggested that combining transition metals with carbon nanotubes as mixed dopants has a significant catalytic effect on the hydrogen storage properties of $MgH_2$. In this study, Material life cycle evaluation was performed to analyze the environmental impact characteristics of Mg-CaO-10 wt.% MWCNTs composites manufacturing process. The software of material life cycle assessment (MLCA) was Gabi 6. Through this, environmental impact assessment was performed for each process.

• Journal of Ceramic Processing Research
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• v.20 no.1
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• pp.63-68
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• 2019

We investigated the effects of Al2O3 addition on (1-x)Li2B4O7-xAl2O3 (LBAO; x = 0, 0.005, 0.01, 0.05, 0.07, and 0.1) glasses. The glasses were synthesized by a conventional melt-quench method. Structural transformations of the LBAO glasses were assessed via X-ray diffraction analysis. Estimations of ΔT, KGS = (Tc-Tg)/(Tm-Tc), activation energy, and the Avrami parameter were performed using differential thermal analysis and differential scanning calorimetry. An interpretation of non-isothermal kinetics of the crystallization process is presented using the modified Ozawa equation. The activation energy E increased from 3.3 to 3.5 eV for the LBAO (x < 0.01) glasses whereas those of the LBAO (x > 0.05) glasses slightly increased from 3.75 to 4.05 eV. The exponent n was estimated to be 3.9 ± 0.1 for the LBAO (x < 0.01) glasses and 3.2 ± 0.02 for the LBAO (x > 0.05) glasses. Microstructural characterization of the glassy and crystalline phases using atomic force microscopy was investigated. The effects of Al2O3 on the LBAO glasses include a decreased nucleation rate in the crystallization process and a significantly reduced crystal size.

• Journal of Powder Materials
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• v.29 no.6
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• pp.511-516
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• 2022

Electroless plating is widely utilized in engineering for the metallization of insulator substrates, including polymers, glass, and ceramics, without the need for the application of external potential. Homogeneous nucleation of metals requires the presence of Sn-Pd catalysts, which significantly reduce the activation energy of deposition. Therefore, rinsing conducted during Sn sensitization and Pd activation is a key variable for the formation of a uniform seed layer without the lack or excess of catalysts. Herein, we report the optimized rinsing process for the functionalization of Sn-Pd catalysts, which enables the uniform FeCo metallization of the glass fibers. Rinsing enables good deposition of the FeCo alloy because of the removal of excess catalysts from the glass fiber. Concurrently, excessive rinsing results in a complete removal of the Sn-Pd nucleus. Collectively, the comprehensive study of the proposed nanomaterial preparation and surface science show that the metallization of insulators is a promising technology for electronics, solar cells, catalysts, and mechanical parts.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.31 no.6
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• pp.23-29
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• 2003

Transonic two-phase flow of Saturated humid air, in which relative humidity is 100%, with various condensation processes around thin airfoils is investigated. The study uses an extended transonic small-disturbance(TSD) model of Rusak and Lee [11, 12] which includes effects of heat addition to the flow due to condensation. Two possible limit types of condensation processes are considered. In the nonequilibrium and homogeneous process, the condensate mass fraction is calculated according to classical nucleation and droplet growth rate models. In the equilibrium process, the condensate mass fraction is calculated by assuming an isentropic process. The flow and condensation equations are solved numerical1y by iterative computations. Results under same upstream conditions describe the flow structure, field of condensate, and pressure distribution on airfoil's surfaces. It is found that flow characteristics, such as position and strength of shock waves and airfoil’s pressure distribution, are different for the two condensation processes. Yet, in each case, heat addition as a result of condensation causes significant changes in flow behavior and affects the aerodynamic performance of airfoils.

• Journal of the Korean Vacuum Society
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• v.12 no.3
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• pp.168-173
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• 2003

Recently, according to the rapid progress in Flat-panel-display industry, there has been a growing interest in the poly-Si process. Compared with a-Si, poly-Si offers significantly high carrier mobility, so it has many advantages to high response rate in Thin Film Transistors (TFT's). We have investigated a new process for the high temperature Solid Phase Crystallization (SPC) of a-Si films without any damages on glass substrates using thin film heater. because the thin film heater annealing method is a very rapid thermal process, it has very low thermal budget compared to the conventional furnace annealing. therefore it has some characteristics such as selective area crystallization, high temperature annealing using glass substrates. A 500 $\AA$-thick a-Si film was crystallized by the heat transferred from the resistively heated thin film heaters through $SiO_2$ intermediate layer. a 1000 $\AA$-thick $TiSi_2$ thin film confined to have 15 $\textrm{mm}^{-1}$ length and various line width from 200 to 400 $\mu\textrm{m}$ was used as the thin film heater. By this method, we successfully crystallized 500 $\AA$-thick a-Si thin films at a high temperature estimated above $850^{\circ}C$ in a few seconds without any thermal deformation of g1ass substrates. These surprising results were due to the very small thermal budget of the thin film heaters and rapid thermal behavior such as fast heating and cooling. Moreover, we investigated the time dependency of the SPC of a-Si films by observing the crystallization phenomena at every 20 seconds during annealing process. We suggests the individual managements of nucleation and grain growth steps of poly-Si in SPC of a-Si with the precise control of annealing temperature. In conclusion, we show the SPC of a-Si by the thin film heaters and many advantages of the thin film heater annealing over other processes

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.449-462
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• 1996

On the reaction crystallization of lanthanum oxalate effects of operation conditions of impeller speed, concentration and feed rate of reactant, and reaction temperature on the nucleation and growth of crystals were investigated experimentally. In general, at low supersation the analysis of crystallization processes is relatively clear. However, at high wupersaturation, which is usually applied in industrial crystallization, the processes are exhibited in much complication. In this study the lanthanum oxalate was crystallized by the reaction crystallization of high concentration of lanthanum chloride and oxalic acid in single-jet semi batch reactor. Agitation of solution and suspension in the reactor influenced to enhance the reaction process and crystal growth process which gave opposite effect on the crystallization of lanthanum oxalate. In our experiment since increase of impeller speed gave more influence on the reaction process rather than on the crystal growth process, the supersaturation concentration increased with increase of impeller speed, then resulted in decrease of mean crystal size. By the same effect of reactant concentration and feed rate, the decrease of mean crystall size of lanthanum oxalate was observed with increasing the reactant concentration and feed rate. In case of increasing reaction temperature, the mean crystal size increased. The morphology of lanthanum oxalate crystal was not changed within the variation ranges of the operation conditions which were applied in our experiment.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.77-77
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• 2016

Thin films synthesized by plasma processes have been widely applied in a variety of industrial sectors. The structure control of thin film is one of prime factor in most of these applications. It is well known that the structure of this film is closely associated with plasma parameters and species of plasma which are electrons, ions, radical and neutrals in plasma processes. However the precise control of structure by plasma process is still limited due to inherent complexity, reproducibility and control problems in practical implementation of plasma processing. Therefore the study on the fundamental physical properties that govern the plasmas becomes more crucial for molecular scale control of film structure and corresponding properties for new generation nano scale film materials development and application. The thin films are formed through nucleation and growth stages during thin film depostion. Such stages involve adsorption, surface diffusion, chemical binding and other atomic processes at surfaces. This requires identification, determination and quantification of the surface activity of the species in the plasma. Specifically, the ions and neutrals have kinetic energies ranging from ~ thermal up to tens of eV, which are generated by electron impact of the polyatomic precursor, gas phase reaction, and interactions with the substrate and reactor walls. The present work highlights these aspects for the controlled and low-temperature plasma enhanced chemical vapour disposition (PECVD) of Si-based films like crystalline Si (c-Si), Si-quantum dot, and sputtered crystalline C by the design and control of radicals, plasmas and the deposition energy. Additionally, there is growing demand on the low-temperature deposition process with low hydrogen content by PECVD. The deposition temperature can be reduced significantly by utilizing alternative plasma concepts to lower the reaction activation energy. Evolution in this area continues and has recently produced solutions by increasing the plasma excitation frequency from radio frequency to ultra high frequency (UHF) and in the range of microwave. In this sense, the necessity of dedicated experimental studies, diagnostics and computer modelling of process plasmas to quantify the effect of the unique chemistry and structure of the growing film by radical and plasma control is realized. Different low-temperature PECVD processes using RF, UHF, and RF/UHF hybrid plasmas along with magnetron sputtering plasmas are investigated using numerous diagnostics and film analysis tools. The broad outlook of this work also outlines some of the 'Grand Scientific Challenges' to which significant contributions from plasma nanoscience-related research can be foreseen.

• 한국신재생에너지학회:학술대회논문집
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• 2005.11a
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• pp.561-566
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• 2005

Polycrystalline silicon films were deposited using hot wire CVD (HWCVD). The deposition of silicon thin films was approached by the theory of charged clusters (TCC). The TCC states that thin films grow by self-assembly of charged clusters or nanoparticles that have nucleated in the gas phase during the normal thin film process. Negatively charged clusters of a few nanometer in size were captured on a transmission electron microscopy (TEM) grid and observed by TEM. The negatively charged clusters are believed to have been generated by ion-induced nucleation on negative ions, which are produced by negative surface ionization on a tungsten hot wire. The electric current on the substrate carried by the negatively charged clusters during deposition was measured to be approximately $-2{\mu}A/cm^2$. Silicon thin films were deposited at different $SiH_4$ and $H_2$ gas mixtures and filament temperatures. The crystalline volume fraction, grain size and the growth rate of the films were measured by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The deposit ion behavior of the si1icon thin films was related to properties of the charged clusters, which were in turn controlled by the process conditions. In order to verify the effect of the charged clusters on the growth behavior, three different electric biases of -200 V, 0 V and +25 V were applied to the substrate during the process, The deposition rate at an applied bias of +25 V was greater than that at 0 V and -200 V, which means that the si1icon film deposition was the result of the deposit ion of charged clusters generated in the gas phase. The working pressures had a large effect on the growth rate dependency on the bias appled to the substrate, which indicates that pressure affects the charging ratio of neutral to negatively charged clusters. These results suggest that polycrystalline silicon thin films with high crystalline volume fraction and large grain size can be produced by control1ing the behavior of the charged clusters generated in the gas phase of a normal HWCVD reactor.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.99-99
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• 2013

In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.