• The Korean Journal of Ceramics
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• 제2권4호
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• pp.184-187
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• 1996

Diamod nucleation by mw assisted CVD was examined various conditions namely, (1) diamond nucleation on variour substrate materials, such as Si, cubic BN, pyrolytic BN and AIN, (2) AST(Activated species transport) method which promote nucleation of diamond on single crystal and polycrystalline alumina substrate was developed. (3) Effect of bias enhancement of nucleation on single crystalline Si was examined, and finally (4) DST (Double step treatment) method was developed to enhance diamond nucleation on Ni. In this method, we separated carbon diffusing process into Ni, carbon precipitating process from the inside of Ni and diamond precipitation process.

• Journal of Mechanical Science and Technology
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• 제18권8호
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• pp.1271-1287
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• 2004

In this article, vapor bubble nucleation in liquid and the evaporation process of a liquid droplet at its superheat limit were discussed from the viewpoint of molecular clustering (molecular cluster model for bubble nucleation). For the vapor bubble formation, the energy barrier against bubble nucleation was estimated by the molecular interaction due to the London dispersion force. Bubble nucleation by quantum tunneling in liquid helium under negative pressure near the absolute zero temperature and bubble nucleation on cavity free micro heaters were also presented as the homogenous nucleation processes.

• Journal of Korean Vacuum Science & Technology
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• 제4권1호
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• pp.18-22
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• 2000

For the enhancement of the nucleation density of the diamond film, we introduced the cyclic process. The cyclic process was carried out by the on/off control of CH$_4$ flow rate for a relatively short time (10 min), compared with the total reaction time (6 h). Prior to depositing the diamond film, we made the pretreated glass substrate via the unidirectional scratch using ∼l $\mu\textrm{m}$ size diamond powders. Diamond films were deposited on the pretreated glass substrate in a microwave plasma enhanced chemical vapor deposition (MPECVD) system. We observed the enhancement of the nucleation density of the diamond films caused by the cyclic process. Detailed surface morphologies of the substrate were investigated after the cyclic process. Based on these results, we discussed the cause for the enhancement of the nucleation density on the pretreated glass substrate by the cyclic process.

• 한국세라믹학회지
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• 제41권6호
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• pp.435-438
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• 2004

MOCVD is one of the major deposition techniques for Cu thin films and Ta-Si-N is one of promising barrier metal candidates for Cu with high thermal stability. Effects of hydrogen plasma pretreatment of the underlying Ta-Si-N film surface on the Cu nucleation in Cu MOCVD were investigated using scanning electron microscopy, X-ray photoelectron spectroscopy and Auger electron emission spectrometry analyses. Cu nucleation in MOCVD is enhanced as the rf-power and the plasma exposure time are increased in the hydrogen plasma pretreatment. The optimal plasma treatment process condition is the rf-power of 40 Wand the plasma exposure time of 2 min. The hydrogen gas flow rate in the hydrogen plasma pretreatment process does not affect Cu nucleation much. The mechanism through which Cu nucleation is enhanced by the hydrogen plasma pretreatment of the Ta-Si-N film surface is that the nitrogen and oxygen atoms at the Ta-Si-N film surface are effectively removed by the plasma treatment. Consequently the chemical composition was changed from Ta-Si-N(O) into Ta-Si at the Ta-Si-N film surface, which is favorable for Cu nucleation.

• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.766-772
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• 2011

Amorphous Si (a-Si) thin films of $p^+/p^-/n^+$ were deposited on $Si_3N_4$/glass substrate by using a plasma enhanced chemical vapor deposition (PECVD) method. These films were annealed at various temperatures and for various times by using a rapid thermal process (RTP) equipment. This step was added before the main thermal treatment to make the nuclei in the a-Si thin film for reducing the process time of the crystallization. The main heat treatment for the crystallization was performed at the same condition of $600^{\circ}C$/18 h in conventional furnace. The open-circuit voltages ($V_{oc}$) were remained about 450 mV up to the nucleation condition of 16min in the nucleation RTP temperature of $680^{\circ}C$. It meat that the process time for the crystallization step could be reduced by adding the nucleation step without decreasing the electrical property of the thin film Si for the solar cell application.

• Journal of Electrochemical Science and Technology
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• 제4권3호
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• pp.93-101
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• 2013

The electrodeposition of indium onto a copper electrode from an aqueous sulfate solution containing $In^{3+}$ was studied by means of cyclic voltammetry and chronoamperometry. Reduction and oxidation of indium on copper were investigated by using cyclic voltammograms at different negative limiting potentials and at different scan rates in cumulative cycles. Cyclic voltammograms indicated that reduction and oxidation processes of indium could involve various reactions. Chronoamperometry was carried out to analyze the nucleation mechanism of indium in the early stage of indium electrodeposition. The non-dimensional plot of the current transients at different potentials showed that the shape of the plot depended on the applied potential. The nucleation of indium at potential step of -0.6~-0.8 V was close to progressive nucleation limited by diffusion. However the non-dimensional plot of current transients for the indium nucleation showed different behaviors from theoretical curves at the potential step lower than -0.8 V.

• 한국분말재료학회지
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• 제27권5호
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• pp.394-400
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• 2020

Molybdenum trioxide (MoO₃) is used in various applications including sensors, photocatalysts, and batteries owing to its excellent ionic conductivity and thermal properties. It can also be used as a precursor in the hydrogen reduction process to obtain molybdenum metals. Control of the parameters governing the MoO₃ synthesis process is extremely important because the size and shape of MoO₃ in the reduction process affect the shape, size, and crystallization of Mo metal. In this study, we fabricated MoO₃ nanoparticles using a solution combustion synthesis (SCS) method that utilizes an organic additive, thereby controlling their morphology. The nucleation behavior and particle morphology were confirmed using ultraviolet-visible spectroscopy (UV-vis) and field emission scanning electron microscopy (FE-SEM). The concentration of the precursor (ammonium heptamolybdate tetrahydrate) was adjusted to be 0.1, 0.2, and 0.4 M. Depending on this concentration, different nucleation rates were obtained, thereby resulting in different particle morphologies.

• 공업화학
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• 제9권7호
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• pp.974-978
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• 1998

회분식 통풍관형(DTB) 냉각 결정화기에서 3-nitro-1,2,4,-triazol-5-one(NTO)의 결정화 메카니즘에 관한 연구가 수행되었다. 결정성장속도 및 핵생성속도에 대한 과포화 의존성이 조사되었다. 핵생성 메카니즘 판별을 위한 Mersmann 이론을 이용하여 NTO의 핵생성 거동에 대한 메카니즘이 파악되었다. DTB 결정화기에서 NTO의 핵생성 거동은 불균일핵생성과 표면핵생성이 동시에 기여함을 알 수 있었다. 핵생성속도는 과포화에 4.2승에 비례하였고 결정성장속도는 과포화의 2.9승에 비례하였다. 회분식 DTB 냉각 결정화에서 얻은 NTO 결정의 크기는 결정화 메카니즘으로부터 얻어진 상관식으로부터 검증되었다.

• 한국결정성장학회지
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• 제8권2호
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• pp.227-232
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• 1998

Si, Mo 등을 substrate로 하고 Hot-Filament C.V.D법으로 저압으로 다이아몬드 박막을 생성시킬 때 탄화수소의 부착과정, 핵생성 및 성장을 조사하였다. 특성은 substrate의 종류, 온도, 압력, 유속 및 $CH_4-H_2$가스의 몰분율과 같은 process 변수로 조사하였으며 다이아몬드는 Ra-man spectroscopy로 측정하였다. 특히 다이아몬드 핵생성과 성장은 scratch와 같은 결함이 있는 곳에 발생하였고 표면확산 등이 핵생성 초기단계에서 중요한 역할을 하였다.

• Journal of Magnetics
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• 제8권3호
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• pp.108-112
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• 2003

We report the experimental finding that there exists a transition of magnetization reversal process with varying the applied field in Co/Pd multilayer. We have measured the wall-motion speed V and the nucleation rate R during magnetization reversal via time-resolved direct domain observation, where the magnetization reversal process of Co/Pd multilayer is found to take a transition from thermal activation process to viscous process at the critical field of about 1.87 H$\_$C/ (coercivity). In the thermal activation regime, we find that the field dependences of two activation volumes for the wall-motion process and the nucleation process are different with each other, which reveals that the wall-motion and nucleation experience completely different interactions. In the viscous regime, we find that the wall-mobility is much smaller than a typical value for the sandwiched Co films, which implies that the Co/Pd interfaces in multilayer substantially contribute to the dynamic dissipation.