• The Korean Journal of Ceramics
• /
• v.2 no.4
• /
• pp.184-187
• /
• 1996

Diamod nucleation by mw assisted CVD was examined various conditions namely, (1) diamond nucleation on variour substrate materials, such as Si, cubic BN, pyrolytic BN and AIN, (2) AST(Activated species transport) method which promote nucleation of diamond on single crystal and polycrystalline alumina substrate was developed. (3) Effect of bias enhancement of nucleation on single crystalline Si was examined, and finally (4) DST (Double step treatment) method was developed to enhance diamond nucleation on Ni. In this method, we separated carbon diffusing process into Ni, carbon precipitating process from the inside of Ni and diamond precipitation process.

• Journal of Mechanical Science and Technology
• /
• v.18 no.8
• /
• pp.1271-1287
• /
• 2004

In this article, vapor bubble nucleation in liquid and the evaporation process of a liquid droplet at its superheat limit were discussed from the viewpoint of molecular clustering (molecular cluster model for bubble nucleation). For the vapor bubble formation, the energy barrier against bubble nucleation was estimated by the molecular interaction due to the London dispersion force. Bubble nucleation by quantum tunneling in liquid helium under negative pressure near the absolute zero temperature and bubble nucleation on cavity free micro heaters were also presented as the homogenous nucleation processes.

• Journal of Korean Vacuum Science & Technology
• /
• v.4 no.1
• /
• pp.18-22
• /
• 2000

For the enhancement of the nucleation density of the diamond film, we introduced the cyclic process. The cyclic process was carried out by the on/off control of CH$_4$ flow rate for a relatively short time (10 min), compared with the total reaction time (6 h). Prior to depositing the diamond film, we made the pretreated glass substrate via the unidirectional scratch using ∼l $\mu\textrm{m}$ size diamond powders. Diamond films were deposited on the pretreated glass substrate in a microwave plasma enhanced chemical vapor deposition (MPECVD) system. We observed the enhancement of the nucleation density of the diamond films caused by the cyclic process. Detailed surface morphologies of the substrate were investigated after the cyclic process. Based on these results, we discussed the cause for the enhancement of the nucleation density on the pretreated glass substrate by the cyclic process.

• Journal of the Korean Ceramic Society
• /
• v.41 no.6
• /
• pp.435-438
• /
• 2004

MOCVD is one of the major deposition techniques for Cu thin films and Ta-Si-N is one of promising barrier metal candidates for Cu with high thermal stability. Effects of hydrogen plasma pretreatment of the underlying Ta-Si-N film surface on the Cu nucleation in Cu MOCVD were investigated using scanning electron microscopy, X-ray photoelectron spectroscopy and Auger electron emission spectrometry analyses. Cu nucleation in MOCVD is enhanced as the rf-power and the plasma exposure time are increased in the hydrogen plasma pretreatment. The optimal plasma treatment process condition is the rf-power of 40 Wand the plasma exposure time of 2 min. The hydrogen gas flow rate in the hydrogen plasma pretreatment process does not affect Cu nucleation much. The mechanism through which Cu nucleation is enhanced by the hydrogen plasma pretreatment of the Ta-Si-N film surface is that the nitrogen and oxygen atoms at the Ta-Si-N film surface are effectively removed by the plasma treatment. Consequently the chemical composition was changed from Ta-Si-N(O) into Ta-Si at the Ta-Si-N film surface, which is favorable for Cu nucleation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.9
• /
• pp.766-772
• /
• 2011

Amorphous Si (a-Si) thin films of $p^+/p^-/n^+$ were deposited on $Si_3N_4$/glass substrate by using a plasma enhanced chemical vapor deposition (PECVD) method. These films were annealed at various temperatures and for various times by using a rapid thermal process (RTP) equipment. This step was added before the main thermal treatment to make the nuclei in the a-Si thin film for reducing the process time of the crystallization. The main heat treatment for the crystallization was performed at the same condition of $600^{\circ}C$/18 h in conventional furnace. The open-circuit voltages ($V_{oc}$) were remained about 450 mV up to the nucleation condition of 16min in the nucleation RTP temperature of $680^{\circ}C$. It meat that the process time for the crystallization step could be reduced by adding the nucleation step without decreasing the electrical property of the thin film Si for the solar cell application.

• Journal of Electrochemical Science and Technology
• /
• v.4 no.3
• /
• pp.93-101
• /
• 2013

The electrodeposition of indium onto a copper electrode from an aqueous sulfate solution containing $In^{3+}$ was studied by means of cyclic voltammetry and chronoamperometry. Reduction and oxidation of indium on copper were investigated by using cyclic voltammograms at different negative limiting potentials and at different scan rates in cumulative cycles. Cyclic voltammograms indicated that reduction and oxidation processes of indium could involve various reactions. Chronoamperometry was carried out to analyze the nucleation mechanism of indium in the early stage of indium electrodeposition. The non-dimensional plot of the current transients at different potentials showed that the shape of the plot depended on the applied potential. The nucleation of indium at potential step of -0.6~-0.8 V was close to progressive nucleation limited by diffusion. However the non-dimensional plot of current transients for the indium nucleation showed different behaviors from theoretical curves at the potential step lower than -0.8 V.

• Journal of Powder Materials
• /
• v.27 no.5
• /
• pp.394-400
• /
• 2020

Molybdenum trioxide (MoO₃) is used in various applications including sensors, photocatalysts, and batteries owing to its excellent ionic conductivity and thermal properties. It can also be used as a precursor in the hydrogen reduction process to obtain molybdenum metals. Control of the parameters governing the MoO₃ synthesis process is extremely important because the size and shape of MoO₃ in the reduction process affect the shape, size, and crystallization of Mo metal. In this study, we fabricated MoO₃ nanoparticles using a solution combustion synthesis (SCS) method that utilizes an organic additive, thereby controlling their morphology. The nucleation behavior and particle morphology were confirmed using ultraviolet-visible spectroscopy (UV-vis) and field emission scanning electron microscopy (FE-SEM). The concentration of the precursor (ammonium heptamolybdate tetrahydrate) was adjusted to be 0.1, 0.2, and 0.4 M. Depending on this concentration, different nucleation rates were obtained, thereby resulting in different particle morphologies.

• Applied Chemistry for Engineering
• /
• v.9 no.7
• /
• pp.974-978
• /
• 1998

The kinetics of crystal growth and nucleation in dependence on the supersaturation of an aqueous solution of 3-nitro-1,2,4-triazol-5-one(NTO) were evaluated on the draft tube-baffle(DTB) crystallizer operated batchwise. The crystal growth rate is proportional to the supersaturation to the 2.9 power, and the nucleation rate to the 4.2 power. The uncleation behavior for NTO-water system in DTB crystallizer was grasped according to Mersmann's criteria. The nucleation in this crystallizer was found to act with heterogeneous nucleation and surface uncleation simultaneously. Simplified relation was derived for calculation of mean crystal size of product crystals from the batch cooling crystallizer. The obtained relation was verified by a set of experiments.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.2
• /
• pp.227-232
• /
• 1998

Diamond crystallization and discontinuous deposit phenomena depend on the process of hydrocarbon deposition, nucleation and growth. Then, it is investigated the concentration of methane, flow rate, structure and the growth process of $CH_4-H_2$ system in hot filament assisted C.V.D. There is a limited value of temperature, pressure, flow rate and the mole fraction of methane-hydrogen gas. Diamond nucleation occurs on substrate selectively and surface diffusion of species on the substrate plays an important role in the early stages of nucleation and growth.

• Journal of Magnetics
• /
• v.8 no.3
• /
• pp.108-112
• /
• 2003

We report the experimental finding that there exists a transition of magnetization reversal process with varying the applied field in Co/Pd multilayer. We have measured the wall-motion speed V and the nucleation rate R during magnetization reversal via time-resolved direct domain observation, where the magnetization reversal process of Co/Pd multilayer is found to take a transition from thermal activation process to viscous process at the critical field of about 1.87 H$\_$C/ (coercivity). In the thermal activation regime, we find that the field dependences of two activation volumes for the wall-motion process and the nucleation process are different with each other, which reveals that the wall-motion and nucleation experience completely different interactions. In the viscous regime, we find that the wall-mobility is much smaller than a typical value for the sandwiched Co films, which implies that the Co/Pd interfaces in multilayer substantially contribute to the dynamic dissipation.