• Title/Summary/Keyword: Novel phenomena

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STATISTICAL PHYSICS APPROACH TO BIOLOGICAL PHENOMENA

  • Sung, Wokyng
    • Proceedings of the Korean Biophysical Society Conference
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    • 1996.07a
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    • pp.7-7
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    • 1996
  • A new trend that emerges at the turn of the century is the physical approach to biological phenomena. It is expected that biology provides novel materials for condensed matter physics and, most importantly, a revolutionary paradigm for physics at large. On the other hand, physics, if properly extended, is expected to provide systematic and quantitative understanding of biological phenomena, and multitude of biotechnological applications. (omitted)

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Self-Pulsation in Multisection Distributed Feedback Laser Diode with a Novel Dual Grating Structure

  • Park, Kyung-Hyun;Leem, Young-Ahn;Yee, Dae-Su;Baek, Yong-Soon;Kim, Dong-Churl;Kim, Sung-Bock;Sim, Eun-Deok
    • ETRI Journal
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    • v.25 no.3
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    • pp.149-155
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    • 2003
  • A self-pulsating multisection distributed-feedback laser diode (DFB LD) can potentially realize all-optical clock extraction. This device generally consists of three sections, two DFB sections and one waveguide section. The most important variable in this device is detuning, which is the relative spectral position between the stop bands of two DFB sections. We fabricated a novel structure in which two gratings were located one over and one under the active layers. Each grating structure was independently defined in processing so that detuning, which is the prerequisite for self-pulsation, could be easily controlled. Observing various self-pulsating phenomena in these devices under several detuning conditions, we characterized the phenomena as dispersive Q-switching, mode beating, and self-mode-locking.

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A Novel Body-tied Silicon-On-Insulator(SOI) n-channel Metal-Oxide-Semiconductor Field-Effect Transistor with Grounded Body Electrode

  • Kang, Won-Gu;Lyu, Jong-Son;Yoo, Hyung-Joun
    • ETRI Journal
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    • v.17 no.4
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    • pp.1-12
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    • 1996
  • A novel body-tied silicon-on-insulator(SOI) n-channel metal-oxide-semiconductor field-effect transistor with grounded body electrode named GBSOI nMOSFET has been developed by wafer bonding and etch-back technology. It has no floating body effect such as kink phenomena on the drain current curves, single-transistor latch and drain current overshoot inherent in a normal SOI device with floating body. We have characterized the interface trap density, kink phenomena on the drain current ($I_{DS}-V_{DS}$) curves, substrate resistance effect on the $I_{DS}-V_{DS}$ curves, subthreshold current characteristics and single transistor latch of these transistors. We have confirmed that the GBSOI structure is suitable for high-speed and low-voltage VLSI circuits.

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A refined HSDT for bending and dynamic analysis of FGM plates

  • Zaoui, Fatima Zohra;Tounsi, Abdelouahed;Ouinas, Djamel;Olay, Jaime A. Vina
    • Structural Engineering and Mechanics
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    • v.74 no.1
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    • pp.105-119
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    • 2020
  • In this work, a novel higher-order shear deformation theory (HSDT) for static and free vibration analysis of functionally graded (FG) plates is proposed. Unlike the conventional HSDTs, the proposed theory has a novel displacement field which includes undetermined integral terms and contains fewer unknowns. Equations of motion are obtained by using Hamilton's principle. Analytical solutions for the bending and dynamic investigation are determined for simply supported FG plates. The computed results are compared with 3D and quasi-3D solutions and those provided by other plate theories. Numerical results demonstrate that the proposed HSDT can achieve the same accuracy of the conventional HSDTs which have more number of variables.

Probing and Control of Surface Polarization Phenomena in Molecular Films for Organic Electronics

  • Iwamoto, Mitsumasa
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.3-4
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    • 2007
  • Orientational ordering of polar molecules and excess charges at the interface are main origins of surface polarization. For organic electronics, probing and control of these two surface polarization phenomena are key issues. In this presentation, I report a novel electrical measurement that can directly probe orientational dipolar motion in surface monolayers by Maxwell-displacement-current, and also report a novel optical technique that allows carrier motions in organic materials by measuring the optical second harmonic signals activated by the electric field. Then I discuss how the control of dipolar motions and carrier motions are linked to organic electronics applications such as organic field effect transistors.

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Molecular Dynamics Simulation for Size-Dependent Properties and Various Nanoscale Phenomena

  • Seungho;Joon Sik;Young Ki;Sung San;Jung Soo
    • International Journal of Precision Engineering and Manufacturing
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    • v.5 no.4
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    • pp.28-35
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    • 2004
  • Stimulated by novel phenomena observed in molecular aggregates, recent developments in engineering fields of microscopic scales are creating tremendous opportunities for future nanotechnology-based applications. Investigation in the field involves sub-nanosecond or sub-micrometer interactions between extremely small systems, but researches, to date in these physical extremes have been quite limited. Here, we shed light on some of nanoscale phenomena using molecular dynamics simulation: visualization of various phenomena of nanoscales and exploration of size-dependent mechanical properties.

Novel properties of erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors

  • Jang, Moon-Gyu;Kim, Yark-Yeon;Shin, Jae-Heon;Lee, Seong-Jae;Park, Kyoung-Wan
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.2
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    • pp.94-99
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    • 2004
  • silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is $120{\mu}A/{\mu}m$ and on/off-current ratio is higher than $10^5$ with low leakage current less than $10{\mu}A/{\mu}m$. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length SB-MOSFETs is predicted. The results show that the subthreshold swing value can be lower than 60 mV/decade.

Embodiment of all-optical switching phenomena on a GaAs waveguide

  • Lee, Sang-Jae
    • Journal of Sensor Science and Technology
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    • v.5 no.5
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    • pp.85-95
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    • 1996
  • Based on the transmission of coupled gap solitons in nonlinear periodic media, we present an all-optical switching scheme which has a novel architecture and principle. The proposed switch with an extremely small switching element can be realized on a semiconductor waveguide. We here investigate the switching performance with a GaAs waveguide in order to give criteria for the experimental realization of the all-optical switching phenomena. We also suggest a variation of an index-matching scheme to solve the technical problem such as the input-energy coupling into a periodic waveguide.

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A Review of Science of Databases and Analysis of Its Case Studies (데이터베이스의 과학에 대한 고찰 및 연구 사례 분석)

  • Suh, Young-Kyoon;Kim, Jong Wook
    • Journal of KIISE
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    • v.43 no.2
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    • pp.237-245
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    • 2016
  • In this paper we introduce a novel database research area called science of databases (SoDB) and carry out a comprehensive analysis of its case studies. SoDB aims to better understand interesting phenomena observed across multiple database management systems (DBMSes). While mathematical and engineering work in the database field has been dominant, less attention has been given to scientific approaches through which DBMSes can be better understood. Scientific investigations can lead to better engineered designs through deeper understanding of query optimizers and transaction processing. The SoDB research has investigated several interesting phenomena observed across different DBMSes and provided several engineering implications based on our uncovered results. In this paper we introduce a novel scientific, empirical methodology and describe the research infrastructure to enable the methodology. We then review each of a selected group of phenomena studied and present an identified structural causal model associated with each phenomenon. We also conduct a comprehensive analysis on the case studies. Finally, we suggest future directions to expand the SoDB research.

A Novel Optimization Procedure Utilizing the Conformal Transformation Method (등각사상법과 유한요소법을 이용한 2단계 최적설계법)

  • Im, Jee-Won
    • Proceedings of the KIEE Conference
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    • 2001.07e
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    • pp.7-12
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    • 2001
  • A large number of methods for the design optimization have been proposed in recent years. However, it is not easy to apply these methods to practical use because of many iterations. So, in the design optimization, physical and engineering investigation of the given model are very important, which results in an overall increase in the optimization speed. This paper describes a novel optimization procedure utilizing the conformal transformation method. This approach consists of two phases and has the advantage of grasping the physical phenomena of the model easily. Some numerical results that demonstrate the validity of the proposed method are also presented.

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