• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.911-913
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• 2008

In this work, nonvolatile memory (NVM) devices for system on panel of flat panel display (FPD) were fabricated using low temperature polycrystalline silicon (LTPS) thin film transistor (TFT) technology with an oxide-nitride-oxynitride (ONOn) stack structure on glass. The results demonstrate that the NVM devices fabricated using the ONOn stack structure on glass have suitable switching characteristics for data storage with a low operating voltage, a threshold voltage window of more than 1.8 V between the programming and erasing (P/E) states after 10 years and its initial threshold voltage window (${\Delta}V_{TH}$) after $10^5$ P/E cycles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.416-419
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• 2003

There is a growing need for a nonvolatile memory technology with faster speed than existing nonvolatile memories. We studied of phase-change according to temperature and voltage in chalcogenide thin film base on $Ge_2Sb_2Te_5$. Searching for Tg(Glass transition temperature) temperature controlled on hotplate with RT quenching. We measure I-V characteristic through out bottom electrode(ITO) and top electrode(Al) between $Ge_2Sb_2Te_5$. And compared with I-V characteristics after impress the variable stress.

• Korean journal of food and cookery science
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• v.6 no.1
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• pp.1-8
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• 1990

To study the most optimum condition of Dongchimi, the various Dongchimi distinct from the amount of salt, the temperature of fermentation and the ratio of radish to water were examed by sensory evaluation. Also, the content of volatile organic acids and nonvolatile organic acids were investigated by GC, the content of sulfur compounds by GC/MS. Volatile organic acids were identified with those butyl esters and nonvolatile organic acids were done with those TMS derivatives. Sulfur compounds and those decomposed products were extracted by steam distillation In results, the most optimum conditions ware salt 2.4% fermented temperature $4^{\circ}C$, ratio 1:1.5. Volatile organic acids detected were formic, acetic acid, and the amounts were effected by saltness. Nonvolatile organic acids detected were lactio, malio, fumario, tartario acid. Lactic acid was thought to effect overall eating quality. Sulfur compounds were almost the isothiocyanate groups in raw radish, which little in fermented Dongchimi.

• Clean Technology
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• v.6 no.2
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• pp.101-106
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• 2000

A new nonvolatile and nonflammable soldering flux was developed. This flux was synthesized with dichloropropane as its solvent instead of VOC solvents such as isopropanol and methanol etc. which had been used in the conventional flux. It was confirmed that the nonflammable and nonvolatile flux(NFV-flux) was better in insulation resistance, workability, and reliability and that it was better in the enviromment and safety of the working place and more economic in comparison with the conventional flux.

• Journal of the Semiconductor & Display Technology
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• v.21 no.1
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• pp.85-90
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• 2022

In this paper, an asynchronous nonvolatile memory module using a self-diagnosis function was designed. For the system to work, a lot of data must be input/output, and memory that can be stored is required. The volatile memory is fast, but data is erased without power, and the nonvolatile memory is slow, but data can be stored semi-permanently without power. The non-volatile static random-access memory is designed to solve these memory problems. However, the non-volatile static random-access memory is weak external noise or electrical shock, data can be some error. To solve these data errors, self-diagnosis algorithms were applied to non-volatile static random-access memory using error correction code, cyclic redundancy check 32 and data check sum to increase the reliability and accuracy of data retention. In addition, the possibility of application to an asynchronous non-volatile storage system requiring reliability was suggested.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.13-17
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• 1996

Superthin ONO ( oxide -nitride - oxide ) structures were fabricated for the MONOS nonvolatile memory device with a 20$\AA$ tunneling oxide, 40$\AA$ nitride and 40$\AA$ blocking oxide. The compositions of each layer in a superthin ONO structure were investigated. Also, the characteristics of trap related to the memory quality were examined.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.188-189
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• 2002

One of the current goals in memory device developments is to realize a nonvolatile memory, i.e., the stored information maintains even when the power is turned off. The representative candidates for nonvolatile memories are magnetic random access memory (MRAM) and ferroelectric random access memory (FRAM). In order to achieve a high density memory in MRAM device, the external magnetic field should be localized in a tiny cell to control the direction of spontaneous magnetization. (omitted)

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.789-798
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• 1996

The double nitride layer Metal Nitride Oxide Semiconductor(MNOS) structures were fabricated by variating both gas ratio and nitride thickness, and by duplicating nitride deposited and one nitride layer MNOS structure to improve nonvolatile memory characteristics of MNOS structures by Low Pressure Chemical Vapor Deposition(LPCVD) method. The nonvolatile memory characteristics of write-in, erase, memory retention and degradation of Bias Temperature Stress(BTS) were investigated by the homemade automatic .DELTA. $V_{FB}$ measuring system. In the trap density double nitride layer structures were higher by 0.85*10$^{16}$ $m^{-2}$ than one nitride layer structure, and the AVFB with oxide field was linearly increased. However, one nitride layer structure was linearly increased and saturated above 9.07*10$^{8}$ V/m in oxide field. In the erase behavior, the hole injection from silicon instead of the trapped electron emission was observed, and also it was highly dependent upon the pulse amplitude and the pulse width. In the memory retentivity, double nitrite layer structures were superior to one nitride layer structure, and the decay rate of the trapped electron with increasing temperature was low. At increasing the number on BTS, the variance of AVFB of the double nitride layer structures was smaller than that of one nitride layer structure, and the trapped electron retention rate was high. In this paper, the double nitride layer structures were turned out to be useful in improving the nonvolatile memory characteristics.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.16 no.3
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• pp.7-12
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• 2016

DRAM is commonly used as a smartphone memory medium, but extending its capacity is challenging due to DRAM's large battery consumption and density limit. Meanwhile, smartphone applications such as social network services need increasingly large memory, resulting in long latency due to additional storage accesses. To alleviate this situation, we adopt emerging nonvolatile memory (NVRAM) as smartphone's buffer cache and propose an efficient management scheme. The proposed scheme stores all dirty data in NVRAM, thereby reducing the number of storage accesses. Moreover, it separately exploits read and write histories of data accesses, leading to more efficient management of volatile and nonvolatile buffer caches, respectively. Trace-driven simulations show that the proposed scheme improves I/O performances significantly.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.427-427
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• 2012

Ferroelectric-gate field effect transistor based memory using a nanowire as a conducting channel offers exceptional advantages over conventional memory devices, like small cell size, low-voltage operation, low power consumption, fast programming/erase speed and non-volatility. We successfully fabricated ferroelectric nonvolatile memory devices using both n-type and p-type Si nanowires coated with organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] via a low temperature fabrication process. The devices performance was carefully characterized in terms of their electrical transport, retention time and endurance test. Our p-type Si NW ferroelectric memory devices exhibit excellent memory characteristics with a large modulation in channel conductance between ON and OFF states exceeding $10^5$; long retention time of over $5{\times}10^4$ sec and high endurance of over 105 programming cycles while maintaining ON/OFF ratio higher $10^3$. This result offers a viable way to fabricate a high performance high-density nonvolatile memory device using a low temperature fabrication processing technique, which makes it suitable for flexible electronics.