• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.911-913
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• 2008

In this work, nonvolatile memory (NVM) devices for system on panel of flat panel display (FPD) were fabricated using low temperature polycrystalline silicon (LTPS) thin film transistor (TFT) technology with an oxide-nitride-oxynitride (ONOn) stack structure on glass. The results demonstrate that the NVM devices fabricated using the ONOn stack structure on glass have suitable switching characteristics for data storage with a low operating voltage, a threshold voltage window of more than 1.8 V between the programming and erasing (P/E) states after 10 years and its initial threshold voltage window (${\Delta}V_{TH}$) after $10^5$ P/E cycles.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.416-419
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• 2003

There is a growing need for a nonvolatile memory technology with faster speed than existing nonvolatile memories. We studied of phase-change according to temperature and voltage in chalcogenide thin film base on $Ge_2Sb_2Te_5$. Searching for Tg(Glass transition temperature) temperature controlled on hotplate with RT quenching. We measure I-V characteristic through out bottom electrode(ITO) and top electrode(Al) between $Ge_2Sb_2Te_5$. And compared with I-V characteristics after impress the variable stress.

• 한국식품조리과학회지
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• 제6권1호
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• pp.1-8
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• 1990

To study the most optimum condition of Dongchimi, the various Dongchimi distinct from the amount of salt, the temperature of fermentation and the ratio of radish to water were examed by sensory evaluation. Also, the content of volatile organic acids and nonvolatile organic acids were investigated by GC, the content of sulfur compounds by GC/MS. Volatile organic acids were identified with those butyl esters and nonvolatile organic acids were done with those TMS derivatives. Sulfur compounds and those decomposed products were extracted by steam distillation In results, the most optimum conditions ware salt 2.4% fermented temperature $4^{\circ}C$, ratio 1:1.5. Volatile organic acids detected were formic, acetic acid, and the amounts were effected by saltness. Nonvolatile organic acids detected were lactio, malio, fumario, tartario acid. Lactic acid was thought to effect overall eating quality. Sulfur compounds were almost the isothiocyanate groups in raw radish, which little in fermented Dongchimi.

• 청정기술
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• 제6권2호
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• pp.101-106
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• 2000

비휘발성이고 불연성의 새로운 납땜 플럭스를 개발하였다. 이 플럭스는 기존의 플럭스에서 사용하는 VOC 물질인 이소프로판올/메타놀과 같은 용제를 사용하지 않고 VOC 규제물질이 아닌 디클로로프로판 용제를 사용하여 제조하였다. 이 플럭스는 기존의 이소프로판올/메타놀 용제로 제조한 플럭스에 비하여 전기절연성, 작업성, 신뢰성면에서 우수하였고 작업장의 환경 안정성 면에서 우수하며 경제적임을 확인할 수 있었다.

• 반도체디스플레이기술학회지
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• 제21권1호
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• pp.85-90
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• 2022

In this paper, an asynchronous nonvolatile memory module using a self-diagnosis function was designed. For the system to work, a lot of data must be input/output, and memory that can be stored is required. The volatile memory is fast, but data is erased without power, and the nonvolatile memory is slow, but data can be stored semi-permanently without power. The non-volatile static random-access memory is designed to solve these memory problems. However, the non-volatile static random-access memory is weak external noise or electrical shock, data can be some error. To solve these data errors, self-diagnosis algorithms were applied to non-volatile static random-access memory using error correction code, cyclic redundancy check 32 and data check sum to increase the reliability and accuracy of data retention. In addition, the possibility of application to an asynchronous non-volatile storage system requiring reliability was suggested.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.13-17
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• 1996

Superthin ONO ( oxide -nitride - oxide ) structures were fabricated for the MONOS nonvolatile memory device with a 20$\AA$ tunneling oxide, 40$\AA$ nitride and 40$\AA$ blocking oxide. The compositions of each layer in a superthin ONO structure were investigated. Also, the characteristics of trap related to the memory quality were examined.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 동계연구발표회 논문개요집
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• pp.188-189
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• 2002

One of the current goals in memory device developments is to realize a nonvolatile memory, i.e., the stored information maintains even when the power is turned off. The representative candidates for nonvolatile memories are magnetic random access memory (MRAM) and ferroelectric random access memory (FRAM). In order to achieve a high density memory in MRAM device, the external magnetic field should be localized in a tiny cell to control the direction of spontaneous magnetization. (omitted)

• E2M - 전기 전자와 첨단 소재
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• 제9권8호
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• pp.789-798
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• 1996

The double nitride layer Metal Nitride Oxide Semiconductor(MNOS) structures were fabricated by variating both gas ratio and nitride thickness, and by duplicating nitride deposited and one nitride layer MNOS structure to improve nonvolatile memory characteristics of MNOS structures by Low Pressure Chemical Vapor Deposition(LPCVD) method. The nonvolatile memory characteristics of write-in, erase, memory retention and degradation of Bias Temperature Stress(BTS) were investigated by the homemade automatic .DELTA. $V_{FB}$ measuring system. In the trap density double nitride layer structures were higher by 0.85*10$^{16}$ $m^{-2}$ than one nitride layer structure, and the AVFB with oxide field was linearly increased. However, one nitride layer structure was linearly increased and saturated above 9.07*10$^{8}$ V/m in oxide field. In the erase behavior, the hole injection from silicon instead of the trapped electron emission was observed, and also it was highly dependent upon the pulse amplitude and the pulse width. In the memory retentivity, double nitrite layer structures were superior to one nitride layer structure, and the decay rate of the trapped electron with increasing temperature was low. At increasing the number on BTS, the variance of AVFB of the double nitride layer structures was smaller than that of one nitride layer structure, and the trapped electron retention rate was high. In this paper, the double nitride layer structures were turned out to be useful in improving the nonvolatile memory characteristics.

• 한국인터넷방송통신학회논문지
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• 제16권3호
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• pp.7-12
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• 2016

스마트폰의 메모리로 사용되고 있는 DRAM은 고집적화의 한계로 인해 더 이상 용량 증대가 어려울 뿐 아니라 배터리 소모의 상당 부분을 차지하는 것으로 분석되고 있다. 이에 비해 페이스북 등의 소셜 네트워크 서비스는 점점 많은 메모리를 필요로 하고 메모리 용량 부족시 스토리지를 접근하게 되어 상당히 느린 응답 시간을 나타내고 있다. 본 논문은 스마트폰 저장장치의 성능 개선을 위해 차세대 비휘발성메모리를 버퍼캐쉬로 탑재하고 이를 효율적으로 관리하는 알고리즘을 제안한다. 제안하는 기법은 파일의 쓰기 연산이 발생한 데이터를 비휘발성메모리에 보관하여 스토리지 접근 횟수를 크게 줄이는 동시에, 읽기 연산과 쓰기 연산의 기록을 별도로 유지하여 두 연산 모두 성능 저하가 발생하지 않도록 한다. 트레이스 기반 시뮬레이션 실험을 통해 제안한 기법이 기존 방식에 비해 성능이 개선되는 것을 보인다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.427-427
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• 2012

Ferroelectric-gate field effect transistor based memory using a nanowire as a conducting channel offers exceptional advantages over conventional memory devices, like small cell size, low-voltage operation, low power consumption, fast programming/erase speed and non-volatility. We successfully fabricated ferroelectric nonvolatile memory devices using both n-type and p-type Si nanowires coated with organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] via a low temperature fabrication process. The devices performance was carefully characterized in terms of their electrical transport, retention time and endurance test. Our p-type Si NW ferroelectric memory devices exhibit excellent memory characteristics with a large modulation in channel conductance between ON and OFF states exceeding $10^5$; long retention time of over $5{\times}10^4$ sec and high endurance of over 105 programming cycles while maintaining ON/OFF ratio higher $10^3$. This result offers a viable way to fabricate a high performance high-density nonvolatile memory device using a low temperature fabrication processing technique, which makes it suitable for flexible electronics.