• Food Science and Biotechnology
• /
• v.18 no.5
• /
• pp.1293-1297
• /
• 2009

In this study, drying kinetics of onion slices was examined in a laboratory scale vacuum dryer at an air temperature in a range of $50-70^{\circ}C$. Moisture transfer from onion slices was described by applying the Fick's diffusion model, and the effective diffusivity was calculated. Temperature dependency of the effective diffusivity during drying process obeyed the Arrhenius relationship. Effective diffusivity increased with increasing temperature and the activation energy for the onion slices was estimated to be 16.92 kJ/mol. The experimental drying data were used to fit 9 drying models, and drying rate constants and coefficients of models tested were determined by non-linear regression analysis. Estimations by the page and Two-term exponential models were in good agreement with the experimental data obtained.

• Journal of Korean Vacuum Science & Technology
• /
• v.3 no.1
• /
• pp.90-94
• /
• 1999

Field Emission display (FEDs) require enhancement in both driving methods and process techniques to improve the display image quality. However, from the point of view of manufacturing, it is difficult to find methods and techniques to realize low cost manufacturing. New and simple color phosphor screen designs were suggested with non-crossed electrode lines and full color anode panels for small area displays were demonstrated. To avoid unwanted reaction with gases produced from phosphors in a high vacuum glass container, a very thin polyimide layer was coated on the phosphor screen. Moreover, to improve the display image quality, black matrix composed of inorganic materials was fabricated. This paper describes the performance and characteristics of the new full color anode panels.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.302.1-302.1
• /
• 2016

Solution-processed amorphous metal-oxide thin-film transistors (TFTs) are considered as promising candidates for the upcoming transparent and flexible electronics due to their transparent property, good performance uniformity and possibility to fabricate at a low-temperature. In addition, solution processing metal oxide TFTs may allow non-vacuum fabrication of flexible electronic which can be more utilizable for easy and low-cost fabrication. Recently, for high-mobility oxide TFTs, multi-layered oxide channel devices have been introduced such as superlattice channel structure and heterojunction structure. However, only a few studies have been mentioned on the bias illumination stress in the multi- layered oxide TFTs. Therefore, in this research, we investigated the effects of bias illumination stress in solution-processed bilayer oxide TFTs which are fabricated by the deep ultraviolet photochemical activation process. For studying the electrical and stability characteristics, we implemented positive bias stress (PBS) and negative bias illumination stress (NBIS). Also, we studied the electrical properties such as field-effect mobility, threshold voltage ($V_T$) and subthreshold slop (SS) to understand effects of the bilayer channel structure.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.378.1-378.1
• /
• 2014

In this study, we investigated that the resistance switching characteristics of Nb-doped HfO2 films with increasing Nb doping concentration. The Nb-doped HfO2 based ReRAM devices with a TiN/Nb-doped HfO2/Pt/Ti/SiO2 were fabricated on Si substrates. The Nb-doped HfO2 films were deposited by reactive dc magnetron co-sputtering at $300^{\circ}C$ and oxygen partial ratio of 60% (Ar: 16sccm, O2: 24sccm). Microstructure of Nb-doped HfO2 films and atomic concentration were investigated by XRD, TEM, and XPS, respectively. The Nb-doped HfO2 films showed set/reset resistance switching behavior at various Nb doping concentrations. The process voltage of forming/set is decreased and whereas the initial current level is increased in doped HfO2 films. However, the switching properties of Nb-doped HfO2 were changed above the specific doping concentration of Nb. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of non-lattice oxygen and micro-structure of Nb-doped HfO2.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.85.2-85.2
• /
• 2016

With the advent of ultra-short high-intense XFEL (X-ray Free Electron Laser), time-resolved dynamics has become of great importance in exploring femtosecond real-world phenomena of nanoscience and biology. These include studying the response of materials to femtosecond laser excitation and investigating the interaction of XFEL itself with condensed matter. A variety of dynamic phenomena have been investigated such as radiation damage, ultrafast melting process, non-equilibrium phase transitions caused by orbital-lattice-spin couplings. As far as bulk materials are concerned, the sample size has no effect on the following dynamic process. As a result, imaging information is not required by and large. If the sample size is of tens of nanometers, however, sample starts to experience quantum confinement effect which, in turn, affects the following dynamic process. Therefore, to understand the fundamental dynamic phenomena in nano-science, time-resolved imaging information is essential. In this talk, we will briefly introduce scientific highlights achieved in XFEL-based dynamics. In case of bio-imaging, recent scientific topics will be mentioned as well. Finally, we will aim to present feasible topics in ultrafast time-resolved imaging and to discuss the future plan of CXI beamline at PAL-XFEL.

• Journal of Advanced Marine Engineering and Technology
• /
• v.30 no.6
• /
• pp.677-684
• /
• 2006

An ejector is a fluid transfer device to be used for mixing of fluids, maintaining vacuum, and overcoming a poor suction condition. To date, most ejectors have been made from the casting process. which is time-consuming and high-cost process. Therefore, a new production method of ejectors is desired if any. In this experimental study, we proposed a new type ejector manufactured from the commercial fitting materials and the welding process, which is equipped with an orifice type nozzle. The proposed ejector has a good integrity compared with the conventional ejector because the fittings have manufactured by forging and they have more strength than the casting materials. Furthermore we adopted a multi-opening orifice type nozzle for improving a suction capacity and compared with a single-opening orifice type nozzle. From the experimental results. we confirmed that the multi-opening nozzle had a food suction capacity than the single-opening nozzle and the proposed new type ejector showed higher vacuum than the conventional type ejector in non-load condition. These improved characteristics suggests that a new type ejector by using the commercial fittings opens the feasibility to be adopted in various industry fields and that the increased suction capacity can be achieved by altering the nozzle design of a conventional ejector.

• Current Photovoltaic Research
• /
• v.8 no.2
• /
• pp.45-49
• /
• 2020

Molybdenum (Mo) thin films are widely used as back contact in copper indium diselenide (CISe) solar cells. However, despite this, there are only few published studies on the properties of Mo and characteristics of CISe solar cells formed on such Mo substrates. In this studies, we investigated the properties of sputter deposited Mo bilayer, and fabricated non-vacuum CISe solar cells using bilayer Mo substrates. The changes in surface morphology and electrical resistivity were traced by varying the gas pressure during deposition of the bottom Mo layer. In porous surface structure, it was confirmed that the electrical resistivity of Mo bilayer was increased as the amount of oxygen bonded to the Mo atoms increased. The resulting solar cell characteristics vary as the bottom Mo layer deposition pressure, and the maximum solar cell efficiency was achieved when the bottom layer was deposited at 7 mTorr with a thickness of 100 nm and the top layer deposited at 3 mTorr with a thickness of 400 nm.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.255-255
• /
• 2010

Recently, nonvolatile memories (NVM) of various types have been researched to improve the electrical performance such as program/erase voltages, speed and retention times. Also, the charge trap memory is a strong candidate to realize the ultra dense 20-nm scale NVM. Furthermore, the high charge efficiency and the thermal stability of SiC nanocrystals NVM with single $SiO_2$ tunnel barrier have been reported. [1-2] In this study, the SiC charge trap NVM was fabricated and electrical properties were characterized. The 100-nm thick Poly-Si layer was deposited to confined source/drain region by using low-pressure chemical vapor deposition (LP-CVD). After etching and lithography process for fabricate the gate region, the $Si_3N_4/SiO_2/Si_3N_4$ (NON) and $SiO_2/Si_3N_4/SiO_2$ (ONO) barrier engineered tunnel layer were deposited by using LP-CVD. The equivalent oxide thickness of NON and ONO tunnel layer are 5.2 nm and 5.6 nm, respectively. By using ultra-high vacuum magnetron sputtering with base pressure 3x10-10 Torr, the 2-nm SiC and 20-nm $SiO_2$ were successively deposited on ONO and NON tunnel layers. Finally, after deposited 200-nm thick Al layer, the source, drain and gate areas were defined by using reactive-ion etching and photolithography. The lengths of squire gate are $2\;{\mu}m$, $5\;{\mu}m$ and $10\;{\mu}m$. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer, E4980A LCR capacitor meter and an Agilent 81104A pulse pattern generator system. The electrical characteristics such as the memory effect, program/erase speeds, operation voltages, and retention time of SiC charge trap memory device with barrier engineered tunnel layer will be discussed.

• Journal of the Korean Vacuum Society
• /
• v.19 no.1
• /
• pp.45-51
• /
• 2010

We measured the temperature of target surface inducing by various physical phenomenon on magnetron sputtering target and confirmed the possibilities if the temperature distribution could affect plasma and deposited thin film. The target of magnetron sputtering has two types: round type and rectangular type. In a rectangular target, the concentrated discharge area by corner effect by magnetic field and non-uniform erosion of target are generated. And we found the generation of non-uniform temperature distribution on the target surface from this. This area was $10{\sim}20^{\circ}C$ higher than non-sputtering area. And if particles are generated during sputtering process, they were $20^{\circ}C$ higher than the area where is higher than non-sputtering area. These effects result in non-uniformity of thin films, crack of ceramic target, and shortening target life by non-uniform erosion.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.151-151
• /
• 2012

A new plasma process, i.e., the combination of PIII&D and HIPIMS, was developed to implant non-gaseous ions into materials surface. HIPIMS is a special mode of operation of pulsed-DC magnetron sputtering, in which high pulsed DC power exceeding ~1 kW/$cm^2$ of its peak power density is applied to the magnetron sputtering target while the average power density remains manageable to the cooling capacity of the equipment by using a very small duty ratio of operation. Due to the high peak power density applied to the sputtering target, a large fraction of sputtered atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed plasma of sputtered target material by HIPIMS operation, the implantation of non-gaseous ions can be successfully accomplished. The new process has great advantage that thin film deposition and non-gaseous ion implantation along with in-situ film modification can be achieved in a single plasma chamber. Even broader application areas of PIII&D technology are believed to be envisaged by this newly developed process. In one application of non-gaseous plasma immersion ion implantation, Ge ions were implanted into SiO2 thin film at 60 keV to form Ge quantum dots embedded in SiO2 dielectric material. The crystalline Ge quantum dots were shown to be 5~10 nm in size and well dispersed in SiO2 matrix. In another application, Ag ions were implanted into SS-304 substrate to endow the anti-microbial property of the surface. Yet another bio-application was Mg ion implantation into Ti to improve its osteointegration property for bone implants. Catalyst is another promising application field of nongaseous plasma immersion ion implantation because ion implantation results in atomically dispersed catalytic agents with high surface to volume ratio. Pt ions were implanted into the surface of Al2O3 catalytic supporter and its H2 generation property was measured for DME reforming catalyst. In this talk, a newly developed, non-gaseous plasma immersion ion implantation technique and its applications would be shown and discussed.