Effect of heat treatment in $HfO_2$ as charge trap with engineered tunnel barrier for nonvolatile memory
(비휘발성 메모리 적용을 위한 $SiO_2/Si_3N_4/SiO_2$ 다층 유전막과 $HfO_2$ 전하저장층 구조에서의 열처리 효과)
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- Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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- 2008.11a
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- pp.24-25
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- 2008