• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.49-50
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• 2005

Nitrogen and phosphorus ions were implanted into ZnO thin film fabricated by pulsed laser deposition. ion implanted ZnO thin films were annealed from $700^{\circ}C$ to $1000^{\circ}C$ using rapid thermal annealing process. The electron concentration was changed form $10^{20}$ to $10^{18}/cm^3$. Effect of nitrogen and phosphorus in ZnO thin films was certified and the structural and optical properties of nitrogen and phosphorus doped ZnO thin films depending on concentration of nitrogen and phosphorus were investigated.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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• pp.135-136
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• 2002

Molybdenum Nitrided (MoNx) films were deposited by DC planar magnetron sputtering. Silicon wafers and real nitrided stainless steel piston rings are employed as substrates. 12 different combinations of nitrogen and argon partial pressure, from 1:7 to 7:1, were applied to deposit MoNx films. X-ray diffraction (XRD) was used to determine the phase structures of films. When nitrogen vs. argon partial pressure is 1:7, the film is mainly $Mo_2N$ phase. With increase of nitrogen partial pressure, MoN phase emerges, but $Mo_2N$ phase still exists. Composition analysis with atomic emission spectrometry (AES) also agreed with this. The films have very high nanohardness (max 2400Hv) and good adhesion to the substrates.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 추계학술대회 논문집
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• pp.159-159
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• 2009

In this work, nitrogen and oxygen functionalities was introduced to the graphite nanofibers (GNFs) and their effect on electrocatalytic performance of the GNF supports for direct methanol fuel cells (DMFCs) was invesigated. The nitrogen and oxygen groups were introduced through the urea treatments and acid treatment, respectively. And, PtRu catalysts deposited on modified GNFs were prepared by a chemical reduction method. The catalysts were characterized by means of elemental analysis, nitrogen adsorption, and X-ray photoelectron spetroscopy (XPS). The structure and morphological characteristics of the catalysts were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). As a result, the Pt-Ru nanoparticles were impregnated on GNFs with good formation in 3-5 nm. And, the cyclic voltammograms for methanol oxidation revealed that the methanol oxidation peak varied depending on changes of surface functional groups. It was thus considered that the PtRu deposition was related to the reduction of PtRu and surface characteristics of the carbon supports. The changes of surface functional groups were related to PtRu reduction, significantly affect the methanol oxidation activity of anode electrocatalysts in DMFCs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.117-117
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• 2007

The physical and electrical properties of nitrided Hf-silicate films, incorporated by NO gas annealing, were investigated by XPS, NEXAFS, TEM and C-V measurement. We confirmed the nitrogen incorporation during NO gas annealing treatment effectively enhances the thermal stability of Hf-silicate. The suppression of phase separation was observed in Hf-silicate films with high nitrogen contents. The negative shift of threshold voltage is caused by the incorporation of nitrogen in the hafnium silicate films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.872-875
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• 2003

Carbon nitride($CN_x$) thin films were deposited on quartz substrates using reactive RF magnetron sputtering system at uarious deposition conditions and investigated dielectric characteristics. Samples for capacitance measurements were of the MIM(Metal-Insulator-Metal) type devices. Aluminum film electrodes were prepared by a vacuum thermal evaporation method before and after the deposition of carbon nitride films. Capacitances were measured by a FLUKE PM6306 RCL Meter at room temperature. Current-voltage(I-V) characteristics and resistivity were measured by a CATS CA-EDA semiconductor test and analyzer. The carbon nitride films showed ${\alpha}-C_3N_4$ and ${\beta}-C_3N_4$ etc. peaks through Raman and FTIR. Observed surface of film and side structure using SEM(Scanning Electron Microscope), and measured thickness of film by ${\alpha}-step$. We can find that the dielectric constant was the lowest value in 50% nitrogen ratio and the resistivity was the highest value in 70% nitrogen ratio.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2000년도 International Symposium on Magnetics The 2000 Fall Conference
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• pp.251-265
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• 2000

S $m_{2}$F $e_{17}$ $N_{x}$ film magnets using a S $m_{2}$F $e_{17}$ target were prepared at $N_{2}$ gas atmosphere using a Nd-YAG laser ablation technique. The effect of nitrogen pressure, deposition temperature, pulsation time and film thickness on the structure and magnetic properties of S $m_{2}$F $e_{17}$ $N_{x}$ film were studied. Increasing the nitrogen pressure up to 5 atm. was confirmed to lead the formation of complete S $m_{2}$F $e_{17}$ $N_{x}$ compound. Optimized magnetic properties with the nitrogenation temperature ranging over 500-53$0^{\circ}C$ could be obtained by extending the nitrogenation time up to 4 hours. Relatively low coercivities of 400~600 Oe were exhibited from the S $m_{2}$F $e_{17}$ $N_{x}$ films having the thickness of 50~100 nm while 4$\pi$ $M_{s}$ of 10~12 kG could be achieved. In-plane anisotropic characteristic, which was the basic goal in this study, was achieved by controlling the nitrogenation parameters.ameters.ers.ameters.

• 한국진공학회지
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• 제6권S1호
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• pp.75-79
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• 1997

Optical and mechanical characteristics of $TiO-2, ZrO_2 \;and\; SiO_xN_y$ thin films prepared by ion assisted deposition (IAD) were investigated. IAD films were bombarded by Ar or nitrogen ion beam from a Kaufman ion source while they were grown in as e-beam evaporator. The result shows that the Ae IAD increases the refractive index and packing density of $TiO_2 films close to those of the bulk. For $ZrO_2$ films the Ar IAD increases the average refractive index decreases the negative inhomogeneity of refractive index and reverses to the positive inhomogeneity. The optical properties result from improved packing density and denser outer layer next to air The Ar-ion bombardment also induces the changes in microstructure of $ZrO_2$ films such as the preferred (111) orientation of cubic phase increase in compressive stress and reduction of surface roughness. Inhomogeneous refractive index SiOxNy films were also prepared by nitrogen IAD and variable refractive index of $SiO_xN_y$ film was applied to fabricate a rugate filter.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.120-120
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• 1998

Boron nitride (BN) films have attracted a growing interest for a variety of t technological applications due to their excellent characteristics, namely hardness, c chemical inertness, and dielectrical behavior, etc. There are two crystalline phases 1551; of BN that are analogous to phases of carbon. Hexagonal boron nitride (h-BN) has a a layered s$\sigma$ucture which is spz-bonded structure similar to that of graphite, and is t the stable ordered phase at ambient conditions. Cubic boron nitride (c-BN) has a z zinc blende structure with sp3-bonding like as diamond, 따ld is the metastable phase a at ambient conditions. Among of their prototypes, especially 삼Ie c-BN is an i interesting material because it has almost the same hardness and thermal c conductivity as di없nond. C Conventionally, significant progress has been made in the experimental t techniques for synthesizing BN films using various of the physical vapor deposition 밍ld chemical vapor deposition. But, the major disadvantage of c-BN films is that t they are much more difficult to synthesize than h-BN films due to its narrow s stability phase region, high compression stress, and problem of nitrogen source c control. Recent studies of the metalorganic chemical vapor deposition (MOCVD) of I III - V compound have established that a molecular level understanding of the d deposition process is mandatory in controlling the selectivity parameters. This led t to the concept of using a single source organometallic precursor, having the c constituent elements in stoichiometric ratio, for MOCVD growth of 삼Ie required b binary compound. I In this study, therefore, we have been carried out the growth of h-BN thin f films on silicon substrates using a single source precursors. Polycrystalline h-BN t thin films were deposited on silicon in the temperature range of $\alpha$)() - 900 $^{\circ}$C from t the organometallic precursors of Boron-Triethylamine complex, (CZHs)3N:BRJ, and T Tris(dimethylamino)Borane, [CH3}zNhB, by supersonic molecular jet and remote p plasma assisted MOCVD. Hydrogen was used as carrier gas, and additional nitrogen w was supplied by either aDlIDonia through a nozzle, or nitrogen via a remote plasma. T The as-grown films were characterized by Fourier transform infrared spectroscopy, x x-ray pthotoelectron spectroscopy, Auger electron spectroscopy, x-ray diffraction, t transmission electron diffraction, optical transmission, and atomic force microscopy.roscopy.

• 한국전기전자재료학회논문지
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• 제25권12호
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• pp.969-973
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• 2012

AlN thin films were deposited on p-type Si(100) substrates by RF magnetron sputtering method. This study showed the change of the preferential orientation of AlN thin films deposition with the change of the deposition conditions such as sputtering pressure and Ar/N2 gas ratio in chamber. It was identified by X-ray diffraction patterns that AlN thin film deposited at low sputtering pressure has a (002) orientation, however its preferred orientation was changed from the (002) to the (100) orientation with increasing sputtering pressure. Also, it was observed that the properties of AlN thin films such as thickness, grain size and surface roughness were largely dependent on Ar/$N_2$ gas ratio and a high quality thin film could be prepared at lower nitrogen concentration. AlN thin films were investigated relationship between preferential orientation and deposition condition by using XRD, FE-SEM and PFM.

• The Korean Journal of Ecology
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• 제15권4호
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• pp.355-363
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• 1992

Nitrate reductase activity(NRA) and induced NRA were compared in 4 species of moss ctenidium molluscum, homalothecium, tortella tortusa and neckera crispa collected from limestone in england. the NRA and dry weight of the c. molluscum were also measured after spraying with acidic deposition adjusted to ph 5.6, 4.6, 3.6 and 2.8 with one of two molar ratios of nitric to sulfuric acid, i.e. 1:0(N alone) and 1:2(1N+2S) for 20 days. All 4 species showed high NR leavels in the upper part of cut shoots and occurred maximum inducation of NRA within 6h. c. molluscum had the highest NRA levels among 4 species. after daily spraying of acidic deposition, NRA of c. molluscum was increased much more largely at ph 6 and ph 3.6 derived from N alone than from 1N+2S. However that was decreased at ph 2.8 derived both from N alone and 1N+2S . Decline of dry weight had occurred at ph 3.6 and 2.8 derived both from N alone and 1N+2S. Whereas substantial fertilization effect was observed at ph 4.6 derived from N alone. the data suggest that c. molluscum are able to utilize nitrate more effectivery than any other species, and NRA induction are more sensitive than growth response to nitrogen content of acidicdeposition in a short- term. however toxic effects was detected at high $NO_3$ supply and low phacidic deposition.