• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.348-352
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• 2007

In submicron processes, the feature size of ULSI devices is critical, and it is necessary both to reduce the RC time delay for device speed performance and to enable higher current densities without electromigration. In case of contacts between semiconductor and metal in semiconductor devices, it may be very unstable during the thermal annealing process. To prevent these problems, we deposited tungsten carbon nitride (W-C-N) ternary compound thin film as a diffusion barrier for preventing the interdiffusion between metal and semiconductor. The thickness of W-C-N thin film is $1,000{\AA}$ and the process pressure is 7mTorr during the deposition of thin film. In this work we studied the interface effects W-C-N diffusion barrier using the XRD and 4-point probe.

• Proceedings of the KSME Conference
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• 2000.11b
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• pp.247-254
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• 2000

The base pressure of vacuum vessel of the KSTAR (Korea Superconducting Tokamak Advanced Research) Tokamak is to be a ultra high vacuum, $10^{-6}{\sim}10^{-7}Pa$, to produce clean plasma with low impurity containments. For this purpose, the KSTAR vacuum vessel and plasma facing components need to be baked up to at least $250^{\circ}C,\;350^{\circ}C$ respectively, within 24 hours by hot nitrogen gas from a separate baking/cooling line system to remove impurities from the plasma-material interaction surfaces before plasma operation. Here by applying the implicit numerical method to the heat balance equations of the system, overall temperature distributions of the KSTAR vacuum vessel and plasma facing components are obtained during the whole baking process. The model for 2-dimensional baking analysis are segmented into 9 imaginary sectors corresponding to each plasma facing component and has up-down symmetry. Under the resulting combined loads including dead weight, baking gas pressure, vacuum pressure and thermal loads, thermal stresses in the vacuum vessel during bakeout are calculated by using the ANSYS code. It is found that the vacuum vessel and its supports are structurally rigid based on the thermal stress analyses.

• Journal of the Korean institute of surface engineering
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• v.53 no.4
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• pp.169-181
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• 2020

The ferroelectricity in emerging fluorite-structure oxides such as HfO₂ and ZrO₂ has attracted increasing interest since 2011. Different from conventional ferroelectrics, the fluorite-structure ferroelectrics could be reliably scaled down below 10 nm thickness with established atomic layer deposition technique. However, defects such as carbon, hydrogen, and nitrogen atoms in fluorite-structure ferroelectrics are reported to strongly affect the nanoscale polymorphism and resulting ferroelectricity. The characteristic nanoscale polymorphism and resulting ferroelectricity in fluorite-structure oxides have been reported to be influenced by defect concentration. Moreover, the conduction of charge carriers through fluorite-structure ferroelectrics is affected by impurities. In this review, the origin and effects of various kinds of defects are reviewed based on existing literature.

• Journal of the Mineralogical Society of Korea
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• v.17 no.4
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• pp.291-297
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• 2004

Phosphorus is one of the interesting impurities in diamond, because it produces n-type semiconducting character. The character has been studied with spectroscopic methods as well as electric method, but most of the diamond used for these studies are conducted by the CVD (Chemical Vapor Deposition) diamond. In this study, we synthesized the phosphorus doped HPHT (High Pressure and High Temperature) diamond and investigated the characterization using CL spectroscopy to determine how phosphorus incorporated. As a result, the undocumented peaks of 248 and 603 nm as well as the reported peaks (239 nm, 240 ～ 270 nm) at the previous studies were observed. These luminescence peaks may be due to the complex defect of phosphorus with other impurities such as boron and nitrogen.

• Journal of the Korean Society for Marine Environment & Energy
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• v.15 no.2
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• pp.67-75
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• 2012

Carbon-dioxide capture and storage (CCS) process is consisted by capturing carbon-dioxide from large point source such as power plant and steel works, transporting and sequestrating captured $CO_2$ in a stable geological structure. During CCS process, it is inevitable of introducing impurities from combustion, capture and purification process into $CO_2$ stream. Impurities such as $SO_2$, $H_2O$, CO, $N_2$, Ar, $O_2$, $H_2$, can influence on process efficiency, capital expenditure, operation expense of CCS process. In this study, experimental apparatus is built to simulate the behavior of $CO_2$ transport under various impurity composition and process pressure condition. With this apparatus, $N_2$ impurity effect on $CO_2$ mixture transportation was experimentally evaluated. The result showed that as $N_2$ ratio increased pressure drop per mass flow and specific volume of $CO_2-N_2$ mixture also increased. In 120 and 100 bar condition the mixture was in single phase supercritical condition, and as $N_2$ ratio increased gradient of specific volume change and pressure drop per mass flow did not change largely compared to low pressure condition. In 70 bar condition the mixture phase changed from single phase liquid to single phase vapor through liquid-vapor two phase region, and it showed that the gradient of specific volume change and pressure drop per mass flow varied in each phase.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.430.1-430.1
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• 2016

We present the concept of reducible fugitive material that conformally surrounds core Cu nanowire (NW) to fabricate transparent conducting electrode (TCE). Reducing atmosphere can corrodes/erodes the underlying/surrounding layers and might cause undesirable reactions such impurity doing and contamination, so that hydrogen-/forming gas based annealing is impractical to make device. In this regards, we introduce novel reducible shell conformally surrounding indivial CuNW to provide a protection against the oxidation when exposed to both air and solvent. Uniform copper lactate shell formation is readily achievable by injecting lactic acid to the CuNW dispersion as the acid reacts with the surface oxide/hydroxide or pure copper. Cu lactate shell prevents the core CuNW from the oxidation during the storage and/or film formation, so that the core-shell CuNW maintains without signficant oxidation for long time. Upon simple thermal annealing under vacuum or in nitrogen atmosphere, the Cu lactate shell is easily decomposed to pure Cu, providing an effective way to produce pure CuNW network TCE with typically sheet resistance of $19.8{\Omega}/sq$ and optical transmittance of 85.5% at 550 nm. Our reducible copper lactate core-shell Cu nanowires have the great advantage in fabrication of device such as composite transparent electrodes or solar cells.

• Progress in Superconductivity and Cryogenics
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• v.19 no.2
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• pp.19-24
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• 2017

Cryogenic milling which is a combined process of low-temperature treatment and mechanical milling was applied to fabricate high critical current density $(J_c)MgB_2$ bulk superconductors. Liquid nitrogen was used as a coolant, and no solvent or lubricant was used. Spherical Mg ($6-12{\mu}m$, 99.9 % purity) and plate-like B powder (${\sim}1{\mu}m$, 97 % purity) were milled simultaneously for various time periods (0, 2, 4, 6 h) at a rotating speed of 500 rpm using $ZrO_2$ balls. The (Mg+2B) powders milled were pressed into pellets and heat-treated at $700^{\circ}C$ for 1 h in flowing argon. The use of cryomilled powders as raw materials promoted the formation reaction of superconducting $MgB_2$, reduced the grain size of $MgB_2$, and suppressed the formation of impurity MgO. The superconducting critical temperature ($T_c$) of $MgB_2$ was not influenced as the milling time (t) increased up to 6 h. Meanwhile, the critical current density ($J_c$) of $MgB_2$ increased significantly when t increased to 4 h. When t increased further to 6 h, however, $J_c$ decreased. The $J_c$ enhancement of $MgB_2$ by cryogenic milling is attributed to the formation of the fine grain $MgB_2$ and a suppression of the MgO formation.

• Journal of the Korean Magnetics Society
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• v.18 no.1
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• pp.32-35
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• 2008

Thermally stable diffusion barrier of tungsten carbon nitride(W-C-N) and of tungsten boron carbon nitride(W-B-C-N) thin films have studied to investigate the impurity behaviors of boron and nitrogen. In this paper we newly deposited tungsten boron carbon nitride(W-B-C-N) thin film for various $W_2B$ target power on silicon substrate. The impurities of the 100nm-thick W-C-N and W-B-C-N thin films provide stuffing effect for preventing the inter-diffusion between W-C-N or W-B-C-N thin films and silicon during the high temperature($700^{\circ}C{\sim}1000^{\circ}C$) annealing process.

• Journal of the Korean Magnetics Society
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• v.18 no.1
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• pp.14-18
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• 2008

Bismuth-substituted yttrium iron garnet(Bi:YIG) films, which show excellent magnetic and magneto-optical properties as well as low optical losses by optimizing their deposition and post-annealing condition, have been attracting great attention in optical device research area. In this study, the Bi:YIG thick films were deposited with the aerosol deposition method for the final purpose of applying them to optical isolators. Since the aerosol deposition is based on the impact adhesion of sub-micrometer particles accelerated by a carrier gas to a substrate, the flow rate of carrier gas, which is in proportion to mechanically collision energy, should be treated as an important parameter. The Bi:YIG($Bi_{0.5}Y_{2.5}Fe_5O_{12}$) particles with $100{\sim}500$ nm in average diameter were carried and accelerated by nitrogen gas with the flow rate of 0.5 l/min${\sim}$10 l/min. The coercive force decreased from 51 Oe to 37 Oe exponentially with increasing gas flow rate. This is presumably due to the fact that the optimal collision energy results in reduction of impurity and pore, which makes the film to be soft magnetically. The saturation magnetization decreased due to crystallographical distortion of the film with increasing gas flow rate.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.409-409
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• 2014

Recently hexagonal boron nitride (h-BN), III-V compound of boron and nitrogen with strong covalent $sp^2$ bond, is a 2 dimensional insulating material with a large direct band gap up to 6 eV. Its outstanding properties such as strong mechanical strength, high thermal conductivity, and chemical stability have been reported to be similar or superior to graphene. Because of these excellent properties, h-BN can potentially be used for variety of applications such as dielectric layer, deep UV optoelectronic device, and protective transparent substrate. Ultra flat and charge impurity-free surface of h-BN is also an ideal substrate to maintain electrical properties of 2 dimensional materials such as graphene. To synthesize a single or a few layered h-BN, chemical vapor deposition method (CVD) has been widely used by using an ammonia borane as a precursor. Ammonia borane decomposes into hydrogen (gas), monomeric aminoborane (solid), and borazine (gas) that is used for growing h-BN layer. However, very active monomeric aminoborane forms polymeric aminoborane nanoparticles that are white non-crystalline BN nanoparticles of 50~100 nm in diameter. The presence of these BN nanoparticles following the synthesis has been hampering the implementation of h-BN to various applications. Therefore, it is quite important to grow a clean and high quality h-BN layer free of BN particles without having to introduce complicated process steps. We have demonstrated a synthesis of a high quality h-BN monolayer free of BN nanoparticles in wafer-scale size of $7{\times}7cm^2$ by using CVD method incorporating a simple filter system. The measured results have shown that the filter can effectively remove BN nanoparticles by restricting them from reaching to Cu substrate. Layer thickness of about 0.48 nm measured by AFM, a Raman shift of $1,371{\sim}1,372cm^{-1}$ measured by micro Raman spectroscopy along with optical band gap of 6.06 eV estimated from UV-Vis Spectrophotometer confirm the formation of monolayer h-BN. Quantitative XPS analysis for the ratio of boron and nitrogen and CS-corrected HRTEM image of atomic resolution hexagonal lattices indicate a high quality stoichiometric h-BN. The method presented here provides a promising technique for the synthesis of high quality monolayer h-BN free of BN nanoparticles.