• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.75-75
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• 2011

전이금속(transition metal) 질화물(nitride)은 높은 경도, 내마모성, 부식 저항성 그리고 내열성 등과 같은 우수한 기계적 물성 때문에 많은 연구가 되어 왔다. 이 중 질화 티타늄은 높은 경도, 내식 및 내마모의 우수한 기계적 특성으로 공구(tool)와 같은 제품의 수명 향상을 위한 표면 코팅으로 사용되어 왔으며, 금(gold)색의 미려한 색상을 이용한 제품의 외관 표면처리, 정형외과 및 치과용 보형물의 수명 및 안정성 향상 등 다양한 분야에 응용 되고 있다. 본 연구에서는 Cathodic Arc 코팅 방식을 이용하여 질화 티타늄을 합성하였으며, 경사 코팅에 따른 단층 및 다층 피막(3-layer)의 미세조직 변화와 그 물성을 평가하였다. 아크 소스에 장착된 타겟은 99.5%의 Ti 타겟을 사용하였고, 시편과 타겟 간의 거리는 약 31 cm이며, 시편은 알코올과 아세톤으로 초음파 세척 된 냉연강판과 SUS 304를 사용하였다. 시편을 진공용기에 장착하고 ~10-6 Torr까지 진공배기를 실시하고, Ar 가스를 진공용기 내로 공급하여 ~10-4 Torr에서 시편에 bias (Pulse : 400V)를 인가한 후 아크를 발생시켜 약 5분간 청정을 실시하였다. 플라즈마 청정이 끝나면 시편에 인가된 bias를 차단하고 코팅하였다. 경사 코팅을 위한 시편의 회전각은 $30^{\circ}$, $45^{\circ}$, $60^{\circ}$이며, 질화 티타늄의 두께는 약 $3{\mu}m$로 동일하게 코팅 하였다. 경사 코팅된 박막의 경우는 동일 시간 코팅하였을 경우 경사각이 커질수록 두께가 감소하였다. 경사각에 따라 코팅 층이 성장하였고, Bias를 인가 할 경우에는 경사 입사의 효과가 상쇄됨이 관찰되었다. 또한 경사 코팅에 의해 제조된 티타늄 질화물의 경도는 저하 되었으며, $30^{\circ}$와 $60^{\circ}$에 비해 $45^{\circ}$ 경우 경도 저하가 가장 적었다. 결론적으로 Cathodic 아크 코팅 방법으로 질화티타늄을 합성하였고, 경사 코팅을 통해 박막의 미세조직 변화를 확인 하였다. 본 연구에서 얻어진 결과를 이용하여 다양한 구조로 박막의 성장을 유도 할 수 있으며, 이를 통해 경도, 내마모성, 내식성 등의 물성을 변화시킬 수 있는 장점을 가질 것으로 예상된다.

• 센서학회지
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• 제23권2호
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• pp.94-98
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• 2014

Aluminum nitride (AlN) thin films with a TiN buffer layer have been fabricated on SUS430 substrate by RF reactive magnetron sputtering at room temperature under 25~75% $N_2$ /Ar. The characterization of film properties were performed using surface profiler, X-ray diffraction, X-ray photoelectron spectroscopy(XPS), and pressure-voltage measurement system. The deposition rates of AlN films were decreased with increasing the $N_2$ concentration owing to lower mass of nitrogen ions than Ar. The as-deposited AlN films showed crystalline phase, and with increasing the $N_2$ concentration, the peak of AlN(100) plane and the crystallinity became weak. Any change in the preferential orientation of the as-deposited AlN films was not observed within our $N_2$ concentration range. But in the case of 50% $N_2$ /Ar condition, the peak of (002) plane, which is determinant in pressure sensing properties, appeared. XPS depth profiling of AlN/TiN/SUS430 revealed Al/N ratio was close to stoichiometric value (45:47) when deposited under 50% $N_2/Ar$ atmosphere at room temperature. The output signal voltage of AlN sensor showed a linear behavior between 26~85 mV, and the pressure-sensing sensitivity was calculated as 7 mV/MPa.

• 한국세라믹학회지
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• 제40권1호
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• pp.77-80
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• 2003

수용액 내에서 질화물 박막의 산화저항성 흡착 피막의 형성을 확인하기 위하여 Si$_3$N$_4$분말 표면의 glycine 흡착 거동을 조사하였다. 염기성분위기에서 glycine은 Si$_3$N$_4$ 분말 표면에 포화 흡착되었으며 이러한 흡착거동은 Si$_3$N$_4$ 박막의 경우에도 동일하게 일어날 것으로 예상되었다. Glycine을 첨가한 CeO$_2$ 슬러리를 제조하고 PH에 따른 Si$_3$N$_4$와 SiO$_2$ 박막의 연마시험을 수행하여 연마율은 감소하고 선택비는 증가하는 것을 확인하였다. 실험에서 얻은 최대 선택비는 pH=12에서 35 이상이었다. 이는 염기성 분위기에서 glycine이 해리하여 막 표면에 화학흡착하고 산화와 용해를 억제함으로써 연마율을 낮추고 선택비 향상에 기여하였기 때문으로 판단된다. 아미노산 계열의 첨가제를 CeO$_2$계 CMP용 슬러리에 적용하는 경우 산화물/질화물 박막의 선택비를 향상시키는데 효과적임을 확인하였다.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2011년도 추계학술발표대회 논문집
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• pp.245-248
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• 2011

Many researches have been carried out to improve light absorption in the crystalline silicon solar cell fabrication. The rear reflection is applied to increase the path length of light, resulting in the light absorption enhancement and thus the efficiency improvement mainly due to increase in short circuit current. In this paper, we manufactured the silicon solar cell using the mono crystalline silicon wafers with $156{\times}156mm^2$, 0.5~3.0 ${\Omega}{\cdot}cm$ of resistivity and p-type. After saw damage removal, the dielectric film ($SiN_x$)on the back surface was deposited, followed by surface texturing in the KOH solution. It resulted in single-side texturing wafer. Then the dielectric film was removed in the HF solution. The silicon wafers were doped with phosphorus by $POCl_3$ with the sheet resistance 50 ${\Omega}/{\Box}$ and then the silicon nitride was deposited on the front surface by the PECVD with 80nm thickness. The electrodes were formed by screen-printing with Ag and Al paste for front and back surface, respectively. The reflectance and transmittance for the single-sided and double-sided textured wafers were compared. The double-sided textured wafer showed higher reflectance and lower transmittance at the long wavelength region, compared to single-sided. The completed crystalline silicon solar cells with different back surface texture showed the conversion efficiency of 17.4% for the single sided and 17.3% for the double sided. The efficiency improvement with single-sided textured solar cell resulted from reflectance increase on back surface and light absorption enhancement.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.109-110
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• 2006

In bio applications, high temperature coefficient of resistance (TCR) at $30^{\circ}C{\sim}40^{\circ}C$ is especially important for a temperature sensor. In this work, single phase-vanadium dioxide ($VO_2$) thin films for temperature sensor were fabricated by reactive DC magnetron sputtering and post-annealing method. VOx thin films deposited by reactive sputtering in a controlled $Ar/O_2$ atmosphere can be transformed into single phase-$VO_2$ films by post-annealing in $N_2$ atmosphere. The grown $VO_2$ thin films have a moderate resistance at room temperature and very high TCR at room temperature and transition temperature, respectively 2.88%/K and 15.8%/K. A detailed structural characterization is performed by SEM, XRD and RBS. SEM morphology image indicates that grains of fabricated $VO_2$films are homogeneous and ball-like in shape. A fact that the films contain only single phase-$VO_2$ is obtained by XRD and RBS analysis. After deposition, the sensors were fabricated by micromachining technology. Silicon nitride membrane and black nickel were used for a thermal isolation structure and absorption layer. In the vicinity of room temperature, the TCR of sensors was enough high to apply for bio sensors.

• 한국자기학회지
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• 제22권4호
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• pp.117-120
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• 2012

각기 암염(rocksalt: RS) 구조와 zinc-blende(ZB) 구조를 가지면서 덩치상태에서 반쪽금속성을 나타내는 NaN 화합물에서 표면의 전자구조를 계산하고 반쪽금속성이 표면에서도 유지되는지를 제일원리 전자구조 계산을 통해 검토하였다. 이를 위해 두 가지 원소를 모두 가진 표면, 즉 RS(001) 표면과 ZB(110) 표면을 고려하였다. 각각의 판에 대해 계산된 자기모멘트는 정수로서 이는 표면에서도 반쪽금속성이 유지됨을 나타낸다. 이러한 사실은 각 원자에 대한 상태밀도를 통해서도 확인할 수 있었다. 각각의 계에서 자기모멘트 값에 대해 N 원자들이 주된 기여를 하였고, 두 계 모두에서 표면 N 원자의 자기모멘트는 덩치 값에 비해 증가 하여 각기 $0.75{\mu}_B$를 가졌다. Na 원자가 자성에 기여하는 바는 미미하였으며 표면으로 갈수록 그 자기모멘트가 줄어들어 자성을 거의 나타내지 않았다. 반쪽금속성을 나타내는 띠간격의 크기는 가운데 층이나 표면층이나 큰 차이가 없었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 춘계학술발표대회
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• pp.34.1-34.1
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• 2009

A great deal of attention has been focused on ZnO nanowires for various electronics and optoelectronics applications. in the pursuit of next generation nanodevices, it would be highly preferred if well-ordered ZnO nanowires of lower dimension could be fabricated on silicon. Before the growth of nanowires, silicon substrates were selectively etched using silicon nitride as masking layer. Vertical aligned ZnO nanowires were grown by metal organic chemical vapor deposition on patterned silicon substrate. The shape of nanostructures was greatly influenced by the micropatterned surface of the substrate. The aspect ratio, packing fraction and the number density of nanowires on top surface are around 10, 0.8 and $10^7\;per\;mm^2$, respectively, whereas the values are 20, 0.3 and $5\times10^7\;per\;mm^2$, respectively, towards the bottom of the cavity. XRD patterns suggest that the nanostructures have good crystallinity. High-resolution transmission electron microscopy confirmed the single crystalline growth of the ZnO nanowires along [0001] direction.

• Nuclear Engineering and Technology
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• 제45권7호
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• pp.847-858
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• 2013

Since 2001, a series of five irradiation test campaigns for atomized U-Mo dispersion fuel rods, KOMO-1, -2, -3, -4, and -5, has been conducted at HANARO (Korea) in order to develop high performance low enriched uranium dispersion fuel for research reactors. The KOMO irradiation tests provided valuable information on the irradiation behavior of U-Mo fuel that results from the distinct fuel design and irradiation conditions of the rod fuel for HANARO. Full size U-Mo dispersion fuel rods of 4-5 $g-U/cm^3$ were irradiated at a maximum linear power of approximately 105 kW/m up to 85% of the initial U-235 depletion burnup without breakaway swelling or fuel cladding failure. Electron probe microanalyses of the irradiated samples showed localized distribution of the silicon that was added in the matrix during fuel fabrication and confirmed its beneficial effect on interaction layer growth during irradiation. The modifications of U-Mo fuel particles by the addition of a ternary alloying element (Ti or Zr), additional protective coatings (silicide or nitride), and the use of larger fuel particles resulted in significantly reduced interaction layers between fuel particles and Al.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.91-96
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• 1992

The nonvolatile SNOSFET EEPROM memory devices with the channel width and iength of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] were fabricated by using the actual CMOS 1 [Mbit] process technology. The charateristics of I$\_$D/-V$\_$D/, I$\_$D/-V$\_$G/ were investigated and compared with the channel width and length. From the result of measuring the I$\_$D/-V$\_$D/ charges into the nitride layer by applying the gate voltage, these devices ere found to have a low conductance state with little drain current and a high conductance state with much drain current. It was shown that the devices of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$] represented the long channel characteristics and the devices of 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$] and 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$] represented the short channel characteristics. In the characteristics of I$\_$D/-V$\_$D/, the critical threshold voltages of the devices were V$\_$w/ = +34[V] at t$\_$w/ = 50[sec] in the low conductance state, and the memory window sizes wee 6.3[V], 7.4[V] and 3.4[V] at the channel width and length of 15[$\mu\textrm{m}$]${\times}$15[$\mu\textrm{m}$], 15[$\mu\textrm{m}$]${\times}$1.5[$\mu\textrm{m}$], 1.9[$\mu\textrm{m}$]${\times}$1.7[$\mu\textrm{m}$], respectively. The positive logic conductive characteristics are suitable to the logic circuit designing.

• 한국전기전자재료학회논문지
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• 제27권12호
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• pp.815-819
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• 2014

Aluminum nitride (AlN) thin film and TiN film as a buffer layer were deposited on INCONEL 600 substrate by reactive RF magnetron sputtering at room temperature(R.T.) under 25~75% $N_2/Ar$ atmosphere. The as-deposited AlN films at 25~50% $N_2/Ar$ showed a polycrystalline phase of hexagonal AlN, and an amorphous phase. The peak of AlN (002) plane, which was determinant on a performance of piezoelectric transducer, became strong with increasing the $N_2/Ar$ ratio. Any change in the preferential orientation of the as-deposited AlN films was not observed within our $N_2$ concentration range. The piezoelectric sensing properties of AlN module were performed using pressure-voltage measurement system. The output signal voltage of AlN module showed a linear behavior between 20~80 mV in 1~10 MPa range, and the pressure-sensing sensitivity was calculated as 3.6 mV/MPa.