• Proceedings of the IEEK Conference
• /
• 2003.07b
• /
• pp.675-678
• /
• 2003

본 논문에서는 N-type 기판에서 Nickel-Silicide를 적용하였을 경우에 나타나는 문제점과 PAI (Pre-amorphization Implant)의 효과에 대하여 알아보았다. N-type 기판에 RTP (Rapid Thermal Process)를 통하여 Nickel-Silicide 를 형성하게 되는데, 여기까지는 안정한 Nickel mono-Silicide (NiSi)가 형성됨을 확인하였다. 하지만 후속 열처리 공정 후 심한 응집 현상 (Agglomeration)과 이상 산화 현상 (Abnormal Oxidation Phenomenon), Silicide Island 등 열안정성 (Thermal Stability) 측면에서 여러 가지 많은 문제점들이 나타났다. 이 후속 열처리의 열안정성 취약점들을 극복하는 방안으로 Ge 및 N₂ PAI를 적용하였다. PAI를 적용하였을 경우에는 그렇지 않은 경우에 비하여 고온 열처리 후에도 면저항이 비교적 잘 유지되었으며, 두께가 얇고 안정한 Nickel-Silicide 특성을 확보할 수 있었다. 특히 Ge PAI 에 비하여 N₂ PAI 의 경우가 보다 특성 개선 효과가 크게 나타났다.

• Journal of the Korean institute of surface engineering
• /
• v.38 no.1
• /
• pp.44-48
• /
• 2005

We prepared nickel silicide layers from p-Si(l00)/SiO₂(2000 Å)/poly-Si(700 Å)/Ni(400 Å) structures, feasible for gates in MOSFETs, by annealing them from 500℃～900℃ for 30 minutes. We measured the color coordination in visible range, cross sectional micro-structure, and surface topology with annealing temperature by an UV-VIS-IR spectrometer, field effect scanning electron microscope(FE-SEM), and scanning probe micro-scope respectively. We conclude that we may identify the nickel silicide by color difference of 0.90 and predict the silicide process reliability by color coordination measurement. The nickel silicide layers showed similar thickness while the columnar grains size and surface roughness increased as annealing temperature increased.

• Transactions on Electrical and Electronic Materials
• /
• v.8 no.3
• /
• pp.110-114
• /
• 2007

Dependence of the thermal stability of nickel silicide on the film stress of inter layer dielectric (ILD) layer has been investigated in this study and silicon nitride $(Si_3N_4)$ layer is used as an ILD layer. Nickel silicide was formed with a one-step rapid thermal process at $500^{\circ}C$ for 30 sec. $2000{\AA}$ thick $Si_3N_4$ layer was deposited using plasma enhanced chemical vapor deposition after the formation of Ni silicide and its stress was split from compressive stress to tensile stress by controlling the power of power sources. Stress level of each stress type was also split for thorough analysis. It is found that the thermal stability of nickel silicide strongly depends on the stress type as well as the stress level induced by the $Si_3N_4$ layer. In the case of high compressive stress, silicide agglomeration and its phase transformation from the low-resistivity nickel mono-silicide to the high-resistivity nickel di-silicide are retarded, and hence the thermal stability is obviously improved a lot. However, in the case of high tensile stress, the thermal stability shows the worst case among the stressed cases.

• Korean Journal of Materials Research
• /
• v.15 no.5
• /
• pp.301-305
• /
• 2005

We fabricated nickel silicide layers on whole non-patterned wafers from $p-Si(100)SiO_2(200nm)$/poly-Si(70 nm)mn(40 nm) structure by 40 sec rapid thermal annealing of $500\~900^{\circ}C$. The sheet resistance, cross-sectional microstructure, surface roughness, and phase analysis were investigated by a four point probe, a field emission scanning electron microscope, a scanning probe microscope, and an X-ray diffractometer, respectively. Sheet resistance was as small as $7\Omega/sq$. even at the elevated temperature of $900^{\circ}C$. The silicide thickness and surface roughness increased as silicidation temperature increased. We confirmed the nickel silicides iron thin nickel/poly-silicon structures would be a mixture of NiSi and $NiSi_2$ even at the $NiSi_2$ stable temperature region.

• Korean Journal of Materials Research
• /
• v.10 no.9
• /
• pp.601-606
• /
• 2000

Nickel mono-silicide(NiSi) shows no increase of resistivity as the line width decreases below 0.15$\mu\textrm{m}$. Furthermore, thin silicide can be made easily and restrain the redistribution of dopants, because NiSi in created through the reaction of one nickel atom and one silicon atom. Therefore, we investigated the deposition condition of Ni films, heat treatment condition and basic properties of NiSi films which are expected to be employed for sub-0.15$\mu\textrm{m}$ class devices. The nickel silicide film was deposited on the Si wafer by using a dc-magnetron sputter, then annealed at the temperature range of $150~1000^{\circ}C$. Surface roughness of each specimen was measured by using a SPM (scanning probe microscope). Microstructure and qualitative composition analysis were executed by a TEM-EDS(transmission electron microscope-energy dispersive x-ray spectroscope). Electrical properties of the materials at each annealing temperature were measured by a four-point probe. As the results of our study, we may conclude that; 1. SPM can be employed as a non-destructive process to monitor NiSi/NiSi$_2$ transformation. 2. For annealing temperature over $800^{\circ}C$, oxygen pressure $Po_2$ should be kept below $1.5{\times}10^{-11}torr$ to avoid oxidation of residual Ni. 3. NiSi to $NiSi_2$ transformation temperature in our study was $700^{\circ}C$ from the four-point probe measurement.