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Color Difference Characterization on Nickel Silicides  

Jung Youngsoon (Department of Materials Science and Engineering, University of Seoul)
Song Ohsung (Department of Materials Science and Engineering, University of Seoul)
Kim Dugjoong (Department of Materials Science and Engineering, University of Seoul)
Choi Yongyun (Inter-university Semiconductor Research Center, Seoul National University)
Kim Chongjun (Inter-university Semiconductor Research Center, Seoul National University)
Publication Information
Journal of the Korean institute of surface engineering / v.38, no.1, 2005 , pp. 44-48 More about this Journal
Abstract
We prepared nickel silicide layers from p-Si(l00)/SiO₂(2000 Å)/poly-Si(700 Å)/Ni(400 Å) structures, feasible for gates in MOSFETs, by annealing them from 500℃～900℃ for 30 minutes. We measured the color coordination in visible range, cross sectional micro-structure, and surface topology with annealing temperature by an UV-VIS-IR spectrometer, field effect scanning electron microscope(FE-SEM), and scanning probe micro-scope respectively. We conclude that we may identify the nickel silicide by color difference of 0.90 and predict the silicide process reliability by color coordination measurement. The nickel silicide layers showed similar thickness while the columnar grains size and surface roughness increased as annealing temperature increased.
Keywords
Nickel mono silicide; Gate silicide; Silicides; Color difference; NiSi/sub x/;
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