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http://dx.doi.org/10.3740/MRSK.2005.15.5.301

Property and Microstructure Evolution of Nickel Silicides for Poly-silicon Gates  

Jung Youngsoon (Department of materials science and engineering, University of Seoul)
Song Ohsung (Department of materials science and engineering, University of Seoul)
Kim Sangyoeb (Department of materials science and engineering, University of Seoul)
Choi Yongyun (Inter-university Semiconductor Research Center, Seoul National University)
Kim Chongjun (Inter-university Semiconductor Research Center, Seoul National University)
Publication Information
Korean Journal of Materials Research / v.15, no.5, 2005 , pp. 301-305 More about this Journal
Abstract
We fabricated nickel silicide layers on whole non-patterned wafers from $p-Si(100)SiO_2(200nm)$/poly-Si(70 nm)mn(40 nm) structure by 40 sec rapid thermal annealing of $500\~900^{\circ}C$. The sheet resistance, cross-sectional microstructure, surface roughness, and phase analysis were investigated by a four point probe, a field emission scanning electron microscope, a scanning probe microscope, and an X-ray diffractometer, respectively. Sheet resistance was as small as $7\Omega/sq$. even at the elevated temperature of $900^{\circ}C$. The silicide thickness and surface roughness increased as silicidation temperature increased. We confirmed the nickel silicides iron thin nickel/poly-silicon structures would be a mixture of NiSi and $NiSi_2$ even at the $NiSi_2$ stable temperature region.
Keywords
nickel mono silicide; gate silicide; silicides; salicide; gate oxide;
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