• 공업화학
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• 제21권1호
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• pp.52-57
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• 2010

중금속 이온이나 방사성 양이온을 처리하는 공정으로서 화학약품에 의한 침전법이나 일반 이온교환법을 가장 보편적으로 활용하고 있으나, 이 공정들은 약품의 과다 투여, 유효 금속의 폐기, 고형 폐기물에 의한 2차적인 토양 오염 유발 등과 같은 문제점을 가지고 있다. 이에 따라 최근 들어 선진국을 중심으로 전해환원 전착반응과 이온교환 반응을 결합시킨 전기화학적 이온교환법을 대체 신기술로 개발하고자 많은 관심과 연구가 집중되고 있다. 본 연구에서는 전기화학적 이온교환체 중의 하나인 nickel hexacyanoferrate (NiHCNFe)의 최적 제조조건을 규명하기 위해, 기지금속인 니켈판 표면에 화학적 방법과 전기화학적 방법으로 NiHCNFe 막을 생성하였으며, NiHCNFe의 구조 형태와 조성을 각각 SEM과 EDS 분석을 통하여 조사하였다. 또한 NiHCNFe 막이 생성된 니켈판을 운전전극으로 설치한 단일 평행평판 이온교환 전극반응기에서 산화-환원 전위를 연속적으로 순환시켜 순환전위곡선을 측정하고 피크 전류의 변화 거동을 조사하였다. 본 연구의 실험 결과에 의하면, 화학적으로 제조한 NiHCNFe가 전기화학적으로 제조한 경우보다 우수함을 알 수 있었고, 특히 118 h 화학반응시킨 NiHCNFe 이온교환체의 조밀도, 밀착성, 내구력이 가장 우수하게 나타났다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.201-202
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• 2003

We developed a novel growth method of aligned carbon nanotubes. Aligned carbon nanotubes are grown on a metal catalyst on a glass substrate using biased Helicon plasma chemical vapor deposition (HPECVD) of $CH_4/H_2$ gases from 400 C to 500 C. The Helicon plasma source is one of the high-density plasma sources and is promising for low temperature carbon deposition. A Ni film was used as a catalyst to reduce the activation energy of the nanotubes' growth. The carbon nanotubes were deposited on the nickel catalysis layer selectively.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2007년도 High Temperature Superconductivity Vol.XVII
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• pp.62-62
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• 2007

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제35회 하계학술대회 초록집
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• pp.157-157
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• 2008

• 반도체디스플레이기술학회지
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• 제6권3호
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• pp.19-23
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• 2007

The NiSi is very promising candidate for the metallization in 45 nm CMOS process such as FUSI(fully silicided) gate and source/drain contact because it exhibits non-size dependent resistance, low silicon consumption and mid-gap workfunction. Ni film was first deposited by using ALD (atomic layer deposition) technique with Bis-Ni precursor and $H_2$ reactant gas at $220^{\circ}C$ with deposition rate of $1.25\;{\AA}/cycle$. The as-deposited Ni film exhibited a sheet resistance of $5\;{\Omega}/{\square}$. RTP (repaid thermal process) was then performed by varying temperature from $400^{\circ}C$ to $900^{\circ}C$ in $N_2$ ambient for the formation of NiSi. The process temperature window for the formation of low-resistance NiSi was estimated from $600^{\circ}C$ to $800^{\circ}C$ and from $700^{\circ}C$ to $800^{\circ}C$ with and without Ti capping layer. The respective sheet resistance of the films was changed to $2.5\;{\Omega}/{\square}$ and $3\;{\Omega}/{\square}$ after silicidation. This is because Ti capping layer increases reaction between Ni and Si and suppresses the oxidation and impurity incorporation into Ni film during silicidation process. The NiSi films were treated by additional thermal stress in a resistively heated furnace for test of thermal stability, showing that the film heat-treated at $800^{\circ}C$ was more stable than that at $700^{\circ}C$ due to better crystallinity.

• 접착 및 계면
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• 제4권2호
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• pp.10-20
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• 2003

This paper is relative to the electroless deposition of nickel or copper films on polyimide and polytetrafluoroethylene substrates. First, it is presented an original approach of the electroless process which consists in grafting nitrogenated functionalities on the polymer surfaces via plasma or VUV-assisted treatments operating in a nitrogen-based atmosphere ($NH_3$, $N_2$), and then in catalysing the grafted surfaces in an aqueous tin-free, Pd(+2)-based solution. Adhesion of the Pd(+2) catalytic species on polymer surfaces is explained by the formation of strong covalent bonds between these species and the grafted nitrogenated groups. Second, it is show how a fragmentation test performed in conjunction with electrical measurements can be used to characterize the practical adhesion of the electroless coatings deposited on flexible polymer substrates, and to evidence the influence of some experimental parameters (plasma treatment time and nature of the gas phase).

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.270-271
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• 2008

The contact resistance between organic semiconductor and source-drain electrode in Bottom Contact Organic Thin-Film Transistors (BCOTFTs) can be effectively reduced by metal oxide/molybdenum double layer structure; metal oxide layers including nickel oxide (NiOx/Mo) and moly oxide(MoOx) under molybdenum work as a high performance carrier injection layer. Step profiles of source-drain electrode can be easily achieved by simultaneous etching of the double layers using the difference etching rate between metal oxides and metal layers.

• Transactions on Electrical and Electronic Materials
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• 제16권4호
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• pp.187-189
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• 2015

A charge-trap flash (CTF) thin film transistor (TFT) memory is proposed at a low-temperature process (≤ 450℃). The memory cell consists of a sputtered oxide-nitride-oxide (ONO) gate dielectric and Schottky barrier (SB) source/drain (S/D) junctions using nickel silicide. These components enable the ultra-low-temperature process to be successfully achieved with the ONO gate stacks that have a substrate temperature of room temperature and S/D junctions that have an annealing temperature of 200℃. The silicidation process was optimized by measuring the electrical characteristics of the Ni-silicided Schottky diodes. As a result, the Ion/Ioff current ratio is about 1.4×10⁵ and the subthreshold swing and field effect mobility are 0.42 V/dec and 14 cm²/V·s at a drain voltage of −1 V, respectively.

• 한국표면공학회지
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• 제29권5호
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• pp.424-429
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• 1996

Thin films of Ti-Ni alloy were formed by sputtering under various Ar gas pressures and r. f. powers to investigate the optimum sputtering conditions and to demonstrate their shape memory effect. The composition and structure of the films were examined by electron micro-probe analysis and scanning electron microscope. These films were annealed in order to crystallize them. The mechanical property of the annealed films was evaluated by a conventional bending test. The transformation tmeperatures were determined by differential scanning calorimetry. The shape memory behaviour was examined quantiatatively by changing in sample temperature under various constant loads. It was found that the Ar gas pressure had a critical effect on the mechanical property of the thin film,s although the r.f. power also affected it. The films formed at a high Ar gas pressure were too brittle to be bent successfully. However, the films formed at a low Ar gas pressur could be bent and their shape memory behavior was found to be comparable with that of bulk Ti-Ni alloys.

• 한국표면공학회지
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• 제39권4호
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• pp.166-172
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• 2006

Metallized Polyimide films are extensively used as base materials in microelectronics, optical and automotive applications. However it is difficult to deposit metals on those because of their structural stabilities. In this work, polyimide films are modified by a wet process with alkalinemetalhydroxide and additives to introduce functional groups. The surface molecular structures of polyimide are investigated using X-ray photoelectron spectroscopy(XPS), fourier transform infrared reflection spectroscopy(FTIR-ATR), atomic force micro-scopic(AFM). XPS spectra and FTIR spectra show that the surface structure of polyimide is converted into potassium polyamate. AFM image and AFM cross-sectional analyses reveal the increased roughness on the modified surface of polyimide films. As a result, it is shown that the adhesion strength between polyimide surface and electroless nickel layer is increased by the nano-anchoring effect.