• Current Photovoltaic Research
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• v.11 no.4
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• pp.103-107
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• 2023

A Nickel oxide (NiO_x) thin films were prepared via sol-gel process on a transparent conductive oxide glass substrate. The NiO_x thin films were spin-coated in ambient air and subsequently annealed for 30 minutes at temperatures ranging from 150℃ to 450℃. The structural and optical characteristics of the NiO_x thin films annealed at various temperatures were measured using X-ray diffraction, field emission scanning electron microscopy, and ultraviolet-visible spectroscopy. After optimizing the NiO_x coating conditions, perovskite solar cells were fabricated with p-i-n inverted structure, and its photovoltaic performance was evaluated. NiO_x thin films annealed at 350℃ exhibited the most favorable characteristics as a hole transport layer, resulting in the highest power conversion efficiency of 17.88 % when fabricating inverted perovskite solar cells using this film.

• Composites Research
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• v.28 no.3
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• pp.94-98
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• 2015

This paper reports the effects of nickel film interleaves on the interlaminar shear strength(ILSS) of carbon fiber reinforced epoxy composites(CFRPs). A nickel thin film was deposited onto the prepreg by radio frequency(RF) sputtering at room temperature. The ILSS of the nickel film interleaved hybrid composites was increased compared to that of the composites without interleaves. To understand the mechanism of enhancement of the ILSS, the fracture surface of the tested specimens was examined by scanning electron microscopy(SEM). The metal interleaves were acted as a reinforcement for the matrix rich interface and the shear property of their composites improved by enhancing the resistance to matrix cracking.

• Journal of Electrochemical Science and Technology
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• v.2 no.4
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• pp.204-210
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• 2011

Thin film electrodes have been intensively studied for active materials and current collectors to enhance the electrochemical performance. Here, porous structures of nickel-based oxide films, consisting of nickel oxide and copper (II) oxide, which was derived from the copper substrate during the annealing process, were deposited on metallic copper foils. The half-cell tests revealed excellent capacity retention after $80^{th}$ charge/discharge cycles. Some films showed an excess of the theoretical capacity of nickel oxides, which mainly originate from partially oxidized copper substrates during annealing. These results exhibit that both a preparation method of an active materials and partially oxidized current collectors could be important roles to apply thin film electrodes.

• Journal of Sensor Science and Technology
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• v.33 no.5
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• pp.353-358
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• 2024

Al-Ni thin films were fabricated using combinatorial sputtering system to realize highly sensitive surface acoustic wave (SAW) devices. The Al-Ni sample library was grown with various chemical compositions and electrical resistivities, which provided important information for selecting the most suitable materials for SAW devices. As acoustic waves generated from piezoelectric materials are significantly affected by the resistivity and density of the interdigital transducer (IDT) electrodes, three types of Al-Ni thin films with different Al contents were fabricated. The thickness of the Al-Ni thin film used in the SAW-IDT electrode was fixed at 100 nm. As the Al content of the Al-Ni film decreased from 79.2 to 24.5 at%, the resistivity increased slightly from 4.8 to 5.8 × 10^-5 Ω-cm, whereas the calculated density increased significantly from 3.6 to 6.9 g/cm³. The SAW device composed of Al-Ni IDT electrodes resonated at 71 MHz without frequency shifts; however, the selectivity of the resonant frequency and insertion loss deteriorated as the Al content decreased. When there is no significant difference in the electrical characteristics of the SAW-IDT electrodes, the performance of the SAW devices can be determined by the density of the IDT electrodes.

• Journal of the Korean Magnetics Society
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• v.15 no.3
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• pp.198-201
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• 2005

We investigated the effects of organic additives on the properties of nickel-copper thin films prepared by electroplating. Compared with thin films fabricated by pure electrolyte only, the films utilizing organic additives show different crystalline orientations. With no alteration of plating conditions simply adding the organic materials changed the composition of copper and nickel. The concentration of nickel could be varied to $65-95\%$ depending on the species and concentration of the additives. The change of material property has contributed to the increase or decrease of the magnetoresistance.

• Journal of the Korean Society for Precision Engineering
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• v.32 no.10
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• pp.911-916
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• 2015

In the nano/micro scale, material properties are dependent on the size-scale of a structure. However, conventional micro-scale tensile tests have limitations to obtain reliable values of nano-scale material properties owing to residual stress and elastic slippage in the gripping/aligning process. The indenter-driven nano-scale tensile test provides prominent advantages simple testing device, high-quality nano-scale metallic specimen with negligible residual stress. In this paper, two-types of specimens (a specimen with multi-testing parts and a specimen with a single-testing part) are discussed. Focused ion beam (FIB) is employed to fabricate a nano-scale specimen from a thin nickel film. Using the specimen with a single-testing part, we obtained a nano-scale stress-strain curve of electroplated nickel film.

• Journal of the Korean Magnetics Society
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• v.22 no.2
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• pp.42-44
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• 2012

We have studied a means to control the composition of nickel-iron thin films. By changing current and voltage applied to a electroplating electrolyte we could manipulate the relative concentration of nickel and iron in the thin films, which caused variations of coercivity, squareness, and saturation magnetic field. As we increase the content of iron in the thin films by using potentiostatic and galvanostatic plating, the grain size was increased and the coercivity was reduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.10-11
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• 2006

In this study, the Ni/Co/TiN (6/2/25 nm) structure was deposited for thermal stability estimation. Vacuum (30 mTorrs) annealing was carried out to compare with furnace annealing in nitrogen ambient. The proposed Ni/Co/TiN structure exhibited low temperature silicidation and wide range of rapid thermal process (RTP) windows. The sheet resistance was too high to measure after furnace annealing at $600^{\circ}C$ due to the thin thickness (15 nm) of the nickel silicide. However, the sheet resistance maintained stable characteristics up to $600^{\circ}C$ for 30 min after vacuum annealing. Therefore, the low resistance of thin film nickel silicide was obtained by vacuum annealing at $600^{\circ}C$.

• Journal of the Semiconductor & Display Technology
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• v.7 no.1
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• pp.29-34
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• 2008

In this paper, the DE(double erosion) cathode for the reactive magnetron sputtering system is developed for high deposition rate and high target utilization efficiency. The utilization efficiency of the developed DE cathode is 22% higher than that of normal SE(single erosion) cathode. Sputtering process for the nickel oxide thin films with the DE cathode is performed under the following conditions; power with $1kW{\sim}3kW$, pressure with 4mtorr and 8mtorr, oxygen flow ratio with $0%{\sim}80%$. As a result, the hysteresis phenomenon of discharge voltage in 4mtorr is lower than that in 8mtorr and the hysteresis phenomenon of discharge voltage is getting lower as the applied power is getting higher. The structure of cross section and surface roughness of the thin films are observed by FE-SEM and AFM. The structure of cross section of the thin films is columnar and the average surface roughness under oxygen flow ratio of 0%, 52.5% and 65.0% are $2.08{\AA}$, $2.20{\AA}$ and $0.854{\AA}$, respectively.

• Korean Journal of Chemical Engineering
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• v.35 no.12
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• pp.2474-2479
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• 2018

Plasma-enhanced atomic layer deposition (PEALD) is well-known for fabricating conformal and uniform films with a well-controlled thickness at the atomic level over any type of supporting substrate. We prepared nickel oxide (NiO) thin films via PEALD using bis(ethylcyclopentadienyl)-nickel ($Ni(EtCp)_2$) and $O_2$ plasma. To optimize the PEALD process, the effects of parameters such as the precursor pulsing time, purging time, $O_2$ plasma exposure time, and power were examined. The optimal PEALD process has a wide deposition-temperature range of $100-325^{\circ}C$ and a growth rate of $0.037{\pm}0.002nm$ per cycle. The NiO films deposited on a silicon substrate with a high aspect ratio exhibited excellent conformality and high linearity with respect to the number of PEALD cycles, without nucleation delay.