• Current Photovoltaic Research
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• 제8권2호
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• pp.60-65
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• 2020

In perovskite solar cells with planar heterojunction configuration, selection of proper charge-transporting layers is very important to achieve stable and efficient device. Here, we developed solution processible Cu doped NiO_x (Cu:NiO_x) thin film as a hole-transporting layer (HTL) in p-i-n structured methylammonium lead trihalide (MAPbI₃) perovskite solar cell. The transmittance and thickness of NiO_x HTL is optimized by control the spin-coating rate and Cu is additionally doped to improve the surface morphology of undoped NiO_x thin film and hole-extraction properties. Consequently, a perovskite solar cell containing Cu:NiO_x HTL with optimal doping ratio of Cu exhibits a power conversion efficiency of 14.6%.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
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• pp.188.1-188
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• 2003

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2011년도 임시총회 및 하계학술연구발표회
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• pp.58-59
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• 2011

• 센서학회지
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• 제13권2호
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• pp.152-156
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• 2004

The dielectric and piezoelectric properties of 0.36Pb($Sc_{1/2}Nb_{1/2}$)$O_{3}$-0.25Pb($Ni_{1/3}Nb_{2/3}$)$O_{3}$-0.39Pb$TiO_{3}$ (hereafter PSNNT) at the morphotropic phase boundary (MPB) composition were investigated with $0{\sim}2.5$ mot% $MnO_{2}$ doping. Bulk density, dielectric loss and tetragonality of crystal structure were all improved with increasing $MnO_{2}$ additive content. With increasing $MnO_{2}$ additive content, the electromechanical coupling factor and quality factor were also increased: Electromechanical coupling $k_{p}$ and quality factor $Q_{m}$ at 2.0 mol% $MnO_{2}$ doping with were showed highest values of 55.6 % and 252, respectively.

• Journal of Industrial and Engineering Chemistry
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• 제68권
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• pp.180-186
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• 2018

We report the discovery of Li-rich $Li_{1+x}[(Ni_{0.225}Co_{0.15}Mn_{0.625})_{1-y}V_y]O_2$ as a cathode material for rechargeable lithium-ion batteries in which a small amount of tetravalent vanadium ($V^{4+}$) is selectively and completely incorporated into the manganese sites in the lattice structure. The unwanted oxidation of vanadium to form a $V_2O_5-like$ secondary phase during high-temperature crystallization is prevented by uniformly dispersing the vanadium ions in coprecipitated $[(Ni_{0.225}Co_{0.15}Mn_{0.625})_{1-y}V_y](OH)_2$ particles. Upon doping with $V^{4+}$ ions, the initial discharge capacity (>$275mA\;h\;g^{-1}$), capacity retention, and voltage decay characteristics of the Li-rich layered oxides are improved significantly in comparison with those of the conventional undoped counterpart.

• 한국재료학회지
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• 제14권4호
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• pp.293-299
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• 2004

Transition metal ions doped $TiO_2$ nanostructured powders were prepared with simply heating aqueous $TiOCl_2$ solutions, contained various metal ions (Ni, Al, Fe, Zr, and Nb) of 1.47 mol% added as metal-chlorides, at $100^{\circ}C$ for 4 hrs by homogeneous precipitation process under suppressing conditions of water vaporization. The characterizations for prepared $TiO_2$ powders were carried out to observe doping of metal ions, their concentrations and microstructures using XRD, UV-VIS (DRS), XPS, SEM, TEM and ICP. Also, photo-oxidative abilities were evaluated by decomposition of 4-chlorophenol (4CP) under ultraviolet light irradiations. No secondary oxide phases were formed in all the $VTiO_2$ powders, showing doping with various transition metal ions. When adding ions ($Ni^{2+}$ or$ Al^{3+ }$ and $Zr^{4+}$ ) having valance states or ionic radii greatly different from those of $Ti^{4+}$ , the $TiO_2$ powders of mixed anatase and rutile phases were formed, whereas in the case of additions of $^Fe{3+ }$ and $Nb^{ 5+}$ as well as no addition of metal ion the powders with pure rutile phase alone were formed. Among the prepared $TiO_2$ powders, Ni$^{2+}$ doped $TiO_2$ powders, containing a small amount of anatase phase, showed excellent photo-oxidative ability in 4CP decomposition because of relative decreases in electron-hole recombination and poisoning of $TiO_2$ surface during the photoreaction.n.

• 한국전기전자재료학회논문지
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• 제36권4호
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• pp.413-417
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• 2023

Gallium Oxide (Ga₂O₃) is preferred as a material for next generation power semiconductors. The Ga₂O₃ should solve the disadvantages of low thermal resistance characteristics and difficulty in forming an inversion layer through p-type ion implantation. However, Ga₂O₃ is difficult to inject p-type ions, so it is being studied in a heterojunction structure using p-type oxides, such as NiO, SnO, and Cu₂O. Research the lateral-type FET structure of NiO/Ga₂O₃ heterojunction under the Gate contact using the Sentaurus TCAD simulation. At this time, the VG-ID and VD-ID curves were identified by the thickness of the Epi-region (channel) and the doping concentration of NiO of 1×10¹⁷ to 1×10¹⁹ cm-3. The increase in Epi region thickness has a lower threshold voltage from -4.4 V to -9.3 V at I_D = 1×10^-8 mA/mm, as current does not flow only when the depletion of the PN junction extends to the Epi/Sub interface. As an increase of NiO doping concentration, increases the depletion area in Ga₂O₃ region and a high electric field distribution on PN junction, and thus the breakdown voltage increases from 512 V to 636 V at I_D =1×10^-3 A/mm.

• 한국표면공학회지
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• 제56권5호
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• pp.299-308
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• 2023

In this study, phosphorus (P)-doped nickel cobaltite (P-NiCo₂O₄) and nickel-cobalt layered double hydroxide (P-NiCo-LDH) were synthesized on nickel (Ni) foam as a conductive support using hydrothermal synthesis. The thermal properties, crystal structure, microscopic surface morphology, chemical distribution, electronic state of the constituent elements on the sample surface, and electrical properties of the synthesized P-NiCo₂O₄ and P-NiCo-LDH samples were analyzed using thermogravimetric analysis-differential scanning calorimetry (TGA-DSC), X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), cyclic voltammetry (CV), galvanostatic charge-discharge (GCD), and electrochemical impedance spectroscopy (EIS). The P-NiCo₂O₄ electrode exhibited a specific capacitance of 1,129 Fg^-1 at a current density of 1 Ag^-1, while the P-NiCo-LDH electrode displayed a specific capacitance of 1,012 Fg^-1 at a current density of 1 Ag-1. When assessing capacity changes for 3,000 cycles, the P-NiCo₂O₄ electrode exhibited a capacity retention rate of 54%, whereas the P-NiCo-LDH electrode showed a capacity retention rate of 57%.

• Korean Chemical Engineering Research
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• 제59권1호
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• pp.42-48
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• 2021

본 연구에서는 LiNi0.85Co0.15O2의 전기화학적 특성과 열적 안정성을 향상시키기 위하여 LiNi0.85Co0.15O2에 이종원소인 Zn와 Al을 함께 첨가하여 고상법으로 합성하였다. 물질의 결정 구조, 크기 및 표면 상태는 XRD, SEM을 이용하여 분석하였고 전기화학적 특성은 충방전기를 이용하여 CV(cyclic voltammetry), 초기 충·방전 프로파일, 출력 특성, 수명 특성 등을 측정하였다. Al-O의 강한 결합에너지는 양극활물질의 구조적 안정성을 향상시켰으며, Li+와 Ni2+의 양이온 혼합을 막아 전기화학적 특성 또한 향상되었다. Zn의 큰 이온반경은 양극활물질의 격자상수를 증가시켜 단위 셀의 부피가 확장되었다. Zn와 Al을 0.025몰씩 첨가한 물질의 경우, 0.5 C-rate의 전류밀도에서 100 사이클 동안 80%의 용량 유지율을 보여주었으며 이 결과는 NC 양극활물질보다 12% 높은 수치이다. 또한, 5 C-rate에서의 방전용량은 104 mAh/g으로 기존의 NC 양극활물질보다 36 mAh/g 높은 수치를 보였다. Zn과 Al이 0.025몰씩 첨가된 NC 양극활물질은 출력 특성, 수명 특성에서 우수한 특성을 보여주었다.

• 한국재료학회지
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• 제13권8호
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• pp.503-508
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• 2003

The purpose of this study is to investigate the effect of $V_2$$O_{5}$ addition on the Ag and Cu precipitation in the NiCuZn ferrite layers of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt% $V_2$$O_{5}$ -doped ferrite pastes. With increasing the $V_2$$O_{5}$ content and sintering temperature, Ag and Cu oxide coprecipitated more and more at the polished surface of ferrite layers during re-annealing at $840^{\circ}C$. It was thought that during the sintering process, V dissolved in the NiCuZn ferrite lattice and the Ag-Cu liquid phase of low melting point was formed in the ferrite layers due to the Cu segregation from the ferrite lattice and Ag diffusion from the internal electrode. During re-annealing at $840^{\circ}C$, the Ag-Cu liquid phase came out the polished surface of ferrite layers, and was decomposed into the isolated Ag particles and the Cu oxide phase during the cooling process.