• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.950-952
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• 2000

Considering the effective distribution coefficient of Ni in Fe-Ni-Co invar alloy containing a little amount of carbon, we investigated on the thermal expansion coefficient(${\alpha}$). Fe-Ni-Co invar alloy had a large thermal expansion coefficient in as-casted compared with solution treated. The thermal expansion coefficient of Fe-Ni-Co alloy increased with the carbon content in both state of as-casted and solution treated. The effective distribution coefficient(Ke$\^$Ni/) of Ni was smaller than unity in alloy of not containing carbon, but is way larger than unity in alloy of containing carbon. It was considered that the homogeneity of Ni in primary austenite affected thermal expansion coefficient.

• Applied Microscopy
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• v.26 no.3
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• pp.379-388
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• 1996

Structure of premartensite in $Ti_{50}Ni_{49}Fe_1\;and\;Ti_{50}Ni_{50}$ prepared by self-propagating high temperature synthesis (SHS) method has been investigated by a detailed transmission electron microscopy. $Ti_{50}Ni_{49}Fe_1$ consists of microdomain area and needle type domain area. On the other hand, $Ti_{50}Ni_{50}$ consists of microdomain-free and microdomain area, and needle type domain area. Various types of extra superreflections, such as 1/2<100>, 1/2<110> and 1/4<210> type superreflection have been observed in the selected area electron diffractions from microdomain area. Such extra superreflections are due to transformation from B2 structure to distorted B2 structure or premartensite. The present study shows that incommensurate phase forms as an intermediate phase during martensitic transformation. Particularly, in Fe-free $Ti_{50}Ni_{50}$, two types of matrix phases have been observed, microdomain and microdomain-free area. Types of extra superreflections in $Ti_{50}Ni_{50}$ are different from those in $Ti_{50}Ni_{49}Fe_1$, i.e. 1/7<321> type superreflections have been observed, instead of 1/2<110>, 1/2<100>, 1/4<210> types in $Ti_{50}Ni_{49}Fe_1$.

• Korean Chemical Engineering Research
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• v.43 no.1
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• pp.76-79
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• 2005

Dry etching of NiFe, NiFeCo, and Ta for magnetic random access memory (MRAM) by inductively coupled plasmas (ICPs) of $Cl_2/Ar$ has been carried out. NiFe and NiFeCo showed maximum etch rates at a particular ICP source power, but the etch rate of Ta increased with the ICP source power. The etch rates of the magnetic thin films increased with the RF chuck power, but decreased with the operating pressure and the $Cl_2$ concentration. To avoid a corrosion problem by chlorine, the etched samples were rinsed with de-ionized water for 5 minutes after etching. The etch profile showed a clean and smooth surface at 50% $Cl_2$ concentration.

• Journal of the Korean Magnetics Society
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• v.20 no.2
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• pp.41-44
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• 2010

The Cu thickness dependence of magnetic sensitivity for the NiFe/Cu/NiFe/IrMn spin valve multilayer was investigated. The magnetic properties measured by minor MR curves for the Ta(5 nm)/NiFe(8 nm)/Cu(3.5 nm)/NiFe(4 nm)/IrMn(8 nm)/Ta(2.5 nm) multilayer is MR = 1.46 %, MS = 2.0 %/Oe, $H_c\;=\;2.6\;Oe$, and $H_{int}\;=\;0.1\;Oe$. The magnetic sensitivities of GMR-SV devices with ten different widths and a same length of $4.45\;{\mu}m$ by fabricated by photo lithography decreased from 0.3 %/Oe to 0.06%/Oe as from a width of $10\;{\mu}m$ to $1\;{\mu}m$.

• Journal of Magnetics
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• v.4 no.3
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• pp.88-91
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• 1999

A series of NiO/NiFe bilayer films are deposited with the variation of Ar sputtering pressure for the NiO layers only. As the pressure for the NiO layers increases, the exchange anisotropy field (HEX) decreases gradually and becomes extinct at 2.5 mTorr, at which the maximum coercive force (HC) in the NiO/NiFe films is obtained. Randomly oriented columnar structures with HEX a few tens of Oe and oriented columnar structures with zero HEX are observed in the NiP layers by highvoltage hihg-resolution transmission electron microscopy. The vanishing of the HEX in the oriented structures is attributed to the lack of exchange anisotropy energy (EEX) between NiO and NiFe layers, which results in little contribution of interfacial unidirectional pinning anisotropy to the interface of NiO/NiFe bilayer.

• Journal of the Korean Magnetics Society
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• v.13 no.3
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• pp.97-102
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• 2003

Synthetic ferrimagnetic layer (SyFL) with structure NiFe/Ru/NiFe which can be applied high density TMR device in free layer were prepared by an inductively coupled plasma (ICP) helicon-sputter. We proposed a model of predicting coercivity (H$\_$c/), spin-flopping field (H$\_$sf/), and saturation field (H$\_$s/) as a function of Ru thicknesses, from the equilibrium state of energies of Zeeman, exchange, and uniaxial anisotropy. We fabricated the samples of Ta(50 ${\AA}$)/NiFe(50${\AA}$)nu(4∼20${\AA}$)NiFe(30 ${\AA}$)/Ta(50${\AA}$), and measured the M-H loops with a superconduction quantum interference device (SQUID) applying the external field up to ${\pm}$ 15 kOe. The result was well agreed with the proposed model, and reveal K$\_$u = 1000 erg/㎤, J$\_$ex/ =0.7 erg/$\textrm{cm}^2$. We report that H$\_$c/ below 10 Oe is available, and R$\_$u/ thickness range should be in 4-10 ${\AA}$ for MRAM application. Our result implies that permalloy layers may lead to considerable magnetostriction effect in SyFL and intermixing in NiFe/Ru interfaces.

• Journal of the Korean Magnetics Society
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• v.20 no.2
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• pp.35-40
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• 2010

The GMR-SV (giant magnetoresistance-spin valve) device depending on the micro patterned features according to two easy directions of longitudinal and transversal axes has been studied. The GMR-SV multilayer structure was Ta(5 nm)/NiFe(8 nm)/Cu(2.3 nm)/NiFe(4 nm)/IrMn(8 nm)/Ta(2.5 nm). The applied anisotropy direction of the GMR-SV thin film was performed under the magnitude of 300 Oe using by permanent magnet during the deposition. The size of micro patterned device was a $1\;{\times}\;18\;{\mu}m^2$ after the photo lithography process. In the aspects of the shape magnetic anisotropy effect, there are two conditions of fabrication for GMR-SV device. Firstly, the direction of sensing current was perpendicular to the magnetic easy axis of the pinned NiFe/IrMn bilayer with the transversal direction of device. Secondly, the direction of shape magnetic anisotropy was same to the magnetic easy axis of the free NiFe layer with the longitudinal direction of device.

• Journal of the Korean Magnetics Society
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• v.20 no.1
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• pp.8-12
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• 2010

The magnetostriction and stress of multilayer $NiFeCr/(Cu/Co_{90}Fe_{10}){\times}N/NiFeCr$ films were investigated. As the number of Cu $15{\AA}$/CoFe $15{\AA}$ bilayers was increased, the saturation magnetostriction decreased from $-5.6\times10^{-6}$ at 2 bilayers to $-8.5\times10^{-6}$ at 20 bilayers. A change of CoFe thickness from 10 to $20{\AA}$ caused a decrease in the magnitude of tensile stress from 980MPa to 590MPa as the number of Cu $15{\AA}$/CoFe $15{\AA}$ bilayers increased from 2 to 20. The maximum magnetostrictive anisotropy field that could be developed due to nonzero magnetostriction and stress is calculated to be 135.7 Oe when the number of Cu $15{\AA}$/CoFe $15{\AA}$ bilayers is 10.

• Journal of the Korean Magnetics Society
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• v.17 no.3
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• pp.120-123
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• 2007

The typical double-barrier magnetic tunnel junction (DMTJ) structure examined in this paper consists of a Ta 45/Ru 9.5/IrMn 10/CoFe7/$AlO_x$/free layer/AlO/CoFe 7/IrMn 10/Ru 60 (nm). The free layer consists of an $Ni_{16}Fe_{62}Si_8B_{14}$ 7 nm, $Co_{90}Fe_{10}$ (fcc) 7 nm, or CoFe $t_1$/NiFeSiB $t_2$/CoFe $t_1$ layer in which the thicknesses $t_1$ and $t_2$ are varied. The DMTJ with an NiFeSiB-free layer had a tunneling magnetoresistance (TMR) of 28%, an area-resistance product (RA) of $86\;k{\Omega}{\mu}m^2$, a coercivity ($H_c$) of 11 Oe, and an interlayer coupling field ($H_i$) of 20 Oe. To improve the TMR ratio and RA, a DMTJ comprising an amorphous NiFeSiB layer that could partially substitute for the CoFe free layer was investigated. This hybrid DMTJ had a TMR of 30%, an RA of $68\;k{\Omega}{\mu}m^2$, and a of 11 Oe, but an increased of 37 Oe. We confirmed by atomic force microscopy and transmission electron microscopy that increased as the thickness of NiFeSiB decreased. When the amorphous NiFeSiB layer was thick, it was effective in retarding the columnar growth which usually induces a wavy interface. However, if the NiFeSiB layer was thin, the roughness was increased and became large because of the magnetostatic $N{\acute{e}}el$ coupling.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2003.11a
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• pp.373-378
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• 2003

As a part of assessment of the structural material for the molten salt handling system, corrosion behavior of austenitic alloys, Fe-base and Ni-base in the molten salt of $LiCl-Li_2O_2$ was investigated in the range of temperature; 650~$725^{\circ}C$, time; 24- 168h, $Li_2O$; 3wt%, mixed gas; Ar-10%$O_2$. In the molten salt of $LiCl-Li_2O_2$, Ni-base alloys showed higher corrosion resistance than Fe-base alloys. Fe-base alloy with low Fe and high Ni contents exhibited better corrosion resistance. The scales of $Cr_2O_3$, $FeCr_2O_4$ on Fe-base alloys were showed, and $Cr_2O_3$, $NiFe_2O_4$ on Ni-base alloys were also showed.