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http://dx.doi.org/10.4283/JKMS.2003.13.3.097

Magnetic Anisotropy Behavior in Antiparallely Coupled NiFe/Ru/NiFe Films  

Song, Oh-Sung (서울시립대학교 신소재공학과)
Jung, Young-Soon (서울시립대학교 신소재공학과)
Lee, Ki-Yung (서울시립대학교 신소재공학과)
Abstract
Synthetic ferrimagnetic layer (SyFL) with structure NiFe/Ru/NiFe which can be applied high density TMR device in free layer were prepared by an inductively coupled plasma (ICP) helicon-sputter. We proposed a model of predicting coercivity (H$\_$c/), spin-flopping field (H$\_$sf/), and saturation field (H$\_$s/) as a function of Ru thicknesses, from the equilibrium state of energies of Zeeman, exchange, and uniaxial anisotropy. We fabricated the samples of Ta(50 ${\AA}$)/NiFe(50${\AA}$)nu(4∼20${\AA}$)NiFe(30 ${\AA}$)/Ta(50${\AA}$), and measured the M-H loops with a superconduction quantum interference device (SQUID) applying the external field up to ${\pm}$ 15 kOe. The result was well agreed with the proposed model, and reveal K$\_$u = 1000 erg/㎤, J$\_$ex/ =0.7 erg/$\textrm{cm}^2$. We report that H$\_$c/ below 10 Oe is available, and R$\_$u/ thickness range should be in 4-10 ${\AA}$ for MRAM application. Our result implies that permalloy layers may lead to considerable magnetostriction effect in SyFL and intermixing in NiFe/Ru interfaces.
Keywords
NiFe; Ru; SQUID; exchange coupling; Synthetic ferrimganetic layer; permalloy; ruthenium; SQUID; exchange coupling; free layer;
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