• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.358-361
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• 2002

Self-aligned MOSFETS using a polysilicon gate are widely fabricated in silicon technology. The polysilicon layer acts as a mask for the source and drain implants and does as gate electrode in the final product. However, the usage of polysilicon gate as a self-aligned mask is restricted in fabricating SiC MOSFETS since the following processes such as dopant activation, ohmic contacts are done at the very high temperature to attack the stability of the polysilicon layer. A metal instead of polysilicon can be used as a gate material and even can be used for ohmic contact to source region of SiC MOSFETS, which may reduce the number of the fabrication processes. Co-formation process of metal-source/drain ohmic contact and gate has been examined in the 4H-SiC based vertical power MOSFET At low bias region (<20V), increment of leakage current after RTA was detected. However, the amount of leakage current increment was less than a few tens of ph. The interface trap densities calculated from high-low frequency C-V curves do not show any difference between w/ RTA and w/o RTA. From the C-V characteristic curves, equivalent oxide thickness was calculated. The calculated thickness was 55 and 62nm for w/o RTA and w/ RTA, respectively. During the annealing, oxidation and silicidation of Ni can be occurred. Even though refractory nature of Ni, 950$^{\circ}C$ is high enough to oxidize it. Ni reacts with silicon and oxygen from SiO$_2$ 1ayer and form Ni-silicide and Ni-oxide, respectively. These extra layers result in the change of capacitance of whole oxide layer and the leakage current

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.449-452
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• 1999

NiSi were formed from either Ni monolayer or Ni/Ti bilayer and the SADS method was applied to fabricated PMOSFET with Ni-polycide gate electrodes. PMOSFET made from Ni monolayer showed thermal stability unto 300~40$0^{\circ}C$ for 600sec., and excellent C-V characteristics for long time of drive-in anneal than PMOSFET made from Ni/Ti bilayer. This was attributed to easier decomposition and subsequent Ni diffusion to SiO$_2$ layer, probably due to the presence of Ti unreducing process

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제10권1호
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• pp.36-41
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• 2000

We studied the exchange anisotropy of Ni-Fe/Co-Fe/Mn-Ir/Cu/buffer/Si multilayers using D.C magnetron sputtering technique. Generally, Ni-Fe/Mn-Ir/buffer(Cu)/Si multilayers cannot pin the ferromagnetic layer for the lower exchange biased field. We got $H_{ex}$ ex/ increased by two times, after using Cu/Ta as buffer layer to get larger grain size of Mn-Ir layer and inserting very thin Co-Fe layer between the Ni-Fe layer and the Mn-Ir layer to get improved grain-to-grain epitaxy relation at the interface between Ni-Fe layer and Mn-Ir layer. The variation of $H_{ex}$ by thickness of Mn-Ir layer in ferromagnete/Mn-Ir/buffer/Si multilayers is different to that in Mn-Ir/ferromagnete/buffer/Si multilayers, because the volume distribution of grain size of Mn-Ir layer and the exchange energy at the interface between the Mn-Ir and the ferromagnetic layers is different for stacking sequence.

• Journal of the Korean Magnetics Society
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• 제16권6호
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• pp.279-282
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• 2006

Magnetic tunnel junctions (MTJs), which consisted of amorphous ferromagnetic NiFeSiB free layers, were investigated. The NiFeSiB layers were used to substitute for the traditionally used CoFe and/or NiFe layers with the emphasis being given to obtaining an understanding of the effect of the amorphous free layer on the switching characteristics of the MTJs. $Ni_{16}Fe_{62}Si_{8}B_{14}$ has a lower saturation magnetization ($M_{s}:\;800\;emu/cm^{3}$) than $Co_{90}Fe_{10}$ and a higher anisotropy constant ($K_{u}:\;2700\;erg/cm^{3}$) than $Ni_{80}Fe_{20}$. The $Si/SiO_{2}/Ta$ 45/Ru 9.5/IrMn 10/CoFe $7/AlO_{x}/CoFeSiB\;(t)/Ru\;60\;(in\;nanometers)$structure was found to be beneficial for the switching characteristics of the MTJ, leading to a reduction in the coercivity ($H_{c}$) and an increase in the sensitivity resulted from its lower saturation magnetization and higher uniaxial anisotropy. Furthermore, by inserting a very thin CoFe layer at the tunnel barrier/NiFeSiB interface, the TMR ratio and switching squareness were improved more with the increase of NiFeSiB layer thickness up to 11 nm.

• Journal of the Korean Society for Heat Treatment
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• 제27권1호
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• pp.1-9
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• 2014

For connector material applications, the influence alloying elements of Mn, Cr, Fe, and Ti and cold rolling reduction on the mechanical property, electrical conductivity and bendiability of Cu-Ni-Si-P alloy was investigated. The hot rolled plates were solution treated at $980^{\circ}C$ for 1.5 h, quenched into water, cold rolled by 10% and 30% reduction in thickness, and then aged at $440{\sim}500^{\circ}C$ for 3, 4, 5 times. respectively. Cu-Ni-Si-P-x alloys cold rolled by 10 reduction before heat treatment have a good bendability compare to cold rolled by 30 reduction. Cu-3.4Ni-0.8Si-0.03P-0.1Ti shows the peak strength value of 759 MPa, an electrical conductivity of 39%IACS, an elongation of 10% and a hardness of 256 Hv aged at $440^{\circ}C$ for 6 hrs. Thus it is suitable for lead frame and connector.

• Journal of the Korean institute of surface engineering
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• 제32권6호
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• pp.703-708
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• 1999

Silicides have been used extensively in ULSI logic device fabrication as contact materials for the active areas as well as the poly- Si gates. NiSi is a promising candidate for submicron device application due to less volume expansion, low formation temperature, little silicon consumption, and large stable processing temperature window. In this report, the microstructure of nickel silicides fabricated with a thermal evaporator has been investigated. We observed systematic transformation of Ni silicides of $Ni_2$Si, NiSi, $NiSi_2$, as annealing temperature increases. All the silicides have been identified by a X-ray diffractometer (XRD). The cross-sectional microstructure of silicides was examined by a transmission electron microscope (TEM) equipped with a energy dispersive spectrometer(EDS). The surface roughness of silicides was measured by scanning probe microscope(SPM). Although we observed thin oxide layer existed at the $Ni/NiSi_{x}$ interface, we fabricated successfully $550\AA$-thick planar Ni-monosilicide at the temperature range of$ 400~700^{\circ}C$.

• Journal of Korea Foundry Society
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• 제22권1호
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• pp.42-48
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• 2002

Effects of coating treatment of metallic Cu, Ni-P film on $SiC_p$, for $SiC_p$/iron aluminide composites were studied. Porous hybrid preforms were fabricated by reactive sintering after mixing the coated $SiC_p$, Fe and Al powders. Then the final composites were manufactured by squeeze casting after pouring AC4C Al alloy melts in preforms. The change of reactive temperature, density, microstructure of the preforms and microstructure of the composites were investigated. The exprimental results were summarized as follows. The thickness of Cu and Ni-P metallic layer formed on $SiC_p$ by electroless plating method were about $0.5{\mu}m$ and coated uniformly. There was no remakable change in the ignition temperature with variation of the mixing ratio of Fe and Al powder while in the case of coated $SiC_p$ it was lower about $20^{\circ}C$ than in the non-coated $SiC_p$. The maximum reaction temperature increased with increasing Al contents, but decreased with increasing $SiC_p$ contents. Expansion ratio of preform after reactive sintering increased with amount of Cu coated $SiC_p$. In the case of Fe-70at.%Al, the expansion ratio was about 7% up to 8wt.% of $SiC_p$, addition but further addition of $SiC_p$, increased the ratio significantly. And in the case of Fe-50 and 60at.%Al, it was about 20% up to 16wt.% of $SiC_p$ addition and about 28% in 24wt.% of $SiC_p$, addition. The microstructures of compounds showed that the grains became finer as amount of $SiC_p$, and mixing ratio of iron powder increased and the shape of compounds was changed gradually from irregular to spheroidal.

• Journal of Powder Materials
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• 제11권1호
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• pp.34-42
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• 2004

The effect of extrusion temperature on the microstructure and mechanical properties were studied in He-gas atomized $Al_{81-(x＋y)}Si_{19}Ni_xCe_y$ alloy powders and their extruded bars using SEM, tensile testing and thermal expansion testing. The extruded bar of $Al_{73}Si_{19}Ni_7Ce_1$ alloy consists of a mixed structure in which fine Si particles with a particle size below 20∼500nm and very fine $Al_3Ni,\;Al_3Ce$ compounds with a particle size below 200nm are homogeneously dispersed in Al martix with a grain size below 500nm. With increasing extrusion temperature, the microstructural scale was decreased. The ultimate tensile strength of the alloy bars has incresed with decreasing extrusion temperature from 500 to 35$0^{\circ}C$ and $Al_{73}Si_{19}Ni_7Ce_1$ alloy extreded at 35$0^{\circ}C$ shows a highest tensile strength of 810 MPa due to the fine namostructure. The addition of Ni and Ce decreased the coefficients of thermal expansion and the effects of extression temperature on the thermal expansion were not significant.

• Journal of the Korean institute of surface engineering
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• 제24권4호
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• pp.206-214
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• 1991

In the basic study of selective electroless Ni plating of Si wafers, plating rate and physical properties are investigated to obtain optimum conditions of contact hole filling. Si wafers are excellently activated in the concentration of 0.5M IF, 1mM PdCl2, 2mM EDTA at $70^{\circ}C$, 90sec. The optimum condition of Ni-B deposition on p-type Si wafers is 0.1M NiSO4, 0.11M Citrate, $70^{\circ}C$, pH6.8, 8mM DMAB. The main factor in the sheet resistences variation of films is amorphous and on heat treating matrix was transformed into a stable phase (Ni+Ni3B) at $300-400^{\circ}C$. But pH or DMAB concentration in the plating solution doesn't play role of heat-affected phase change.

• Journal of the Korean institute of surface engineering
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• 제28권1호
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• pp.3-13
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• 1995

Electroless Ni and Cu platings were conducted on $B_4C$ and SiC. In the electroless Ni plating, the deposition rate on $B_4C$ was higher than on SiC. However, the electroless Cu deposition occured with high deposition rate regardless of the carbide substrates used in this study. Uniformity of the deposits was better in the electroless Cu deposition than in the electroless Ni deposition. In the topographies of the electroless depositions, Ni deposits have grown as colony, whereas Cu deposits have grown as fine individual grains.