Journal of the Korean institute of surface engineering (한국표면공학회지)
- Volume 24 Issue 4
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- Pages.206-214
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- 1991
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- 1225-8024(pISSN)
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- 2288-8403(eISSN)
Electroless Nickel-Boron Plating on p-type Si Wafer by DMAB
DMAB에 의한 P형 실리콘 기판 무전해 니켈-붕소 도금
Abstract
In the basic study of selective electroless Ni plating of Si wafers, plating rate and physical properties are investigated to obtain optimum conditions of contact hole filling. Si wafers are excellently activated in the concentration of 0.5M IF, 1mM PdCl2, 2mM EDTA at
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