• Progress in Superconductivity
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• v.3 no.1
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• pp.111-114
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• 2001

Short-length and long-length Ni tapes were fabricated by powder processing, cold rolling and recrystallizatioon heat treatment. In the case of the short-length Ni tape, both in-plane and out-of-plane texture were less than $10^{\circ}$. In the case of the long-length Ni tape, the degree of texture is lower than that of the short-length Ni tape. The relationship between the texture formation and the processing parameter is reported.

• Korean Journal of Materials Research
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• v.7 no.7
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• pp.618-622
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• 1997

상온에서 측정한 Cd$_{x}$Ni$_{1-x}$Fe$_{2}$O$_{4}$의 Mossbauer 스펙트럼은 조성비에 따라 x값이 0.4이하인 시료에서는 준강자성에 의한 여섯개의 공명 흡수선, x값이 0.5인 시료에서는 이완된 형태의 공명흡수선, 그리고 x값이 0.6시료인 상자성에 의한 두개의 공명 흡수선이 나타났다. Cd$_{x}$Ni$_{1-x}$Fe$_{2}$O$_{4}$의 x값이 0.4이하인 시료의 초미세 자기장(H$_{hf}$)과 x값이 0.6 이상인 시료의 사중극자 분열치 (Q.S.)는 Cd농도가 증가함에 따라 감소한다. 시료의자기적 성질에 따른 이성질체 이동치(I.S.)의 차이는 있으나, Ni와 Cd이온의 농도에 따른 뚜렷한 의존성은 나타나지 않았다.다.

• Journal of the Korean institute of surface engineering
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• v.35 no.1
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• pp.53-63
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• 2002

Ni coating was carried out by pulse plating at room temperature. So, experimental conditions for Ni-coating were based on Watt's bath, and new additives(propionic acid) were introduced in the Watt's bath electrolyte as $H_3$$BO_3$ alternatives. By adding propionic acid, coating layer demonstrated a good adhesion and uniformity without special pre-treatment of the 316L stainless steel at room temperature. With a decrease of amount of propionic acid and applied average current density, cathode current efficiency increased. Also, edge effect was decreased with decreasing a peak current and increasing a pulse frequency in the same bath condition. It was found that the optimum condition for Ni coating was a current density of 10~20mA/$\textrm{cm}^2$ at below 500 mA peak current in the $5m\ell/\ell$ propionic acid solution.

• Journal of Magnetics
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• v.7 no.1
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• pp.9-13
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• 2002

The dependences of microscopic magnetic domain on film thickness in unidirectional and isotropic exchange-coupled NiO/NiFe bilayers were investigated by magnetic force microscopy to better understand for exchange biasing. As NiO thickness increases, microscopic domain structure of unidirectional biased film changed to smaller and more complicated domains. However, for isotropic-coupled film a new cross type domain appeared with out-of plane magnetization orientation. The density of the cross domain is proportional to exchange biasing fields and the fact that the domain was originated by the strongest exchange coupling region was confirmed from the dynamic domain configuration during a magnetization cycle.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.107-108
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• 2006

The effect of WC or NbC addition on various properties of Ti(C0.7N0.3)-Ni cermets was investigated. The microstructure oj Ti(C0.7N0.3)-xWC-20Ni showed a typical core/rim structure, irrespective of the WC content, whereas the structure oj Ti(C0.7N0.3)-xNbC-20Ni was different and was dependent on the NbC content. The hardness (HV) and the fracture toughness (KIC) had a tendency to increase marginally, while the coercive force (HC) and the magnetic saturation $(4{\pi}{\sigma})$ decreased gradually with an increase in WC or NbC content in the systems studied. In addition, increasing WC content in Ti(C0.7N0.3)-xWC-20Ni system, decarburization was retarded, while denitrification was accelerated

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.749-752
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• 1995

Electronic structures of the Heusler compounds, XMnSb (X=Ni, Pd, and Pt) are investigated systematically by using the linearized muffiu-tin orbital (LMTO) band method. LMTO band calculations yield that, by including the spinorbit interactions, the NiMnSb and PtMnSb are half-metallic, while PdMnSb is normal metallic at the experimental lattice constant. The effect of the spin-orbit interaction is substantial in PtMnSb, in contrast to NiMnSb and PdMnSb. The calculated X d and Mn 3d angular momentum projected local density of states's reveal that the hybridization between the Mn 3d X d states increases from X = Pt to Pd and Ni.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.197-200
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• 2001

In this letter, we report on the investigation of Ni/Si/Ni Ohmic contacts to n-type 4H-SiC. Ohmic contacts have been formed by a vacuum annealing and $N_2$ gas ambient annealing method at $950^{\circ}C$ for 10 min. The specific contact resistivity ( $\rho_{c}$ ), sheet resistance($R_s$), contact resistance($R_c$), transfer length($L_T$) were calculated from resistance($R_T$) versus contact spacing(d) measurements obtained from 10 TLM(transmission line method) structures. The resulting average values of vacuum annealing sample were $\rho_{c}=3.8{\times}10^{-5}\Omega cm^{3}$, $R_{c}=4.9{\Omega}$, $R_{T}=9.8{\Omega}$ and $L_{T}=15.5{\mu}m$, resulting average values of another sample were $\rho_{c}=2.29{\times}10^{-4}\Omega cm^{3}$, $R_{c}=12.9{\Omega}$ and $R_{T}=25.8{\Omega}$. The physical properties of contacts were examined using X-Ray Diffraction and Auger analysis, there was a uniform intermixing of the Si and Ni, migration of Ni into the SiC.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.1
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• pp.1-7
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• 2010

Interfacial reaction characteristics of a Bi-10Cu-20Sb-0.3Ni Pb-free alloy on Cu pad was investigated by reflow soldering at $430^{\circ}C$. The thickness of interfacial reaction layers with respect to the soldering time was also measured. After the reflow soldering, it was observed that a $(Cu,Ni)_2Sb$, a $Cu_4Sb$ intermetallic layer, and a haze layer, which is consisted of Bi and $Cu_4Sb$ phases, were successively formed at the Bi-10Cu-20Sb-0.3Ni/Cu interface. The total thickness of the reaction layers was found to be linearly increased with increasing of the reflow soldering time up to 120 s. As the added Ni element did not participate in the formation of the thickest $Cu_4Sb$ interfacial layer, suppression of the interfacial growth was not observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.197-200
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• 2001

In this letter, we report on the investigation of Ni/Si/Ni Ohmic contacts to n-type 4H-SiC. Ohmic contacts have been formed by a vacuum annealing and N$_2$ gas ambient annealing method at 950$^{\circ}C$ for 10 min. The specific contact resistivity($\rho$$\sub$c/), sheet resistance(R$\sub$S/), contact resistance(R$\sub$S/), transfer length(LT) were calculated from resistance(R$\sub$T/) versus contact spacing(d) measurements obtained from 10 TLM(transmission line method) structures. The resulting average values of vacuum annealing sample were $\rho$$\sub$c/=3.8x10$\^$-5/ Ω$\textrm{cm}^2$ , R$\sub$c/=4.9Ω, R$\sub$T/=9.8Ω and L$\sub$T/=15.5$\mu\textrm{m}$, resulting average values of another sample were $\rho$$\sub$c/=2.29x10$\^$-4/ Ω$\textrm{cm}^2$ , R$\sub$c/=12.9Ω, R$\sub$T/=25.8Ω. The Physical properties of contacts were examined using X-Ray Diffraction and Auger analysis, there was a uniform intermixing of the Si and Ni, migration of Ni into the SiC.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.1
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• pp.6-10
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• 2018

Ni germanide (NiGe) is a promising alloy material with small contact resistance at the source/drain (S/D) of Ge MOSFETs. However, it is necessary to reduce the specific contact resistance between NiGe and the doped Ge S/D region in high-performance MOSFETs. In this study, a novel method is proposed to reduce the specific contact resistance between NiGe and p-type Ge (p-Ge) using a Tb interlayer. The specific contact resistance between NiGe and p-Ge was successfully decreased with the introduction of the Tb interlayer. To investigate the mechanism behind the reduction in the specific contact resistance, the elemental distribution and crystalline structure of NiGe were analyzed using secondary ion mass spectroscopy and X-ray diffraction. It is likely that the reduction in specific contact resistance was caused by an increase in the concentration of boron in the space between NiGe and p-Ge due to the influence of the Tb interlayer.