• Title/Summary/Keyword: Ni-Cr film

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Surface and Electrical Properties of 2 wt% Cr-doped Ni Ultrathin Film Electrode for MLCCs

  • Yim, Haena;Lee, JinJu;Choi, Ji-Won
    • Journal of Sensor Science and Technology
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    • v.24 no.4
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    • pp.224-227
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    • 2015
  • In this study, 2 wt% Cr-doped Ni thin films were deposited using DC sputtering on a bare Si substrate using a 4 inch target at room temperature. In order to obtain ultrathin films from Cr-doped Ni thin films with high electrical properties and uniform surface, the micro-structure and electrical properties were investigated as a function of deposition time. For all deposition times, the Cr-doped Ni thin films had low average resistivity and small surface roughness. However, the resistivity of the Cr-doped Ni thin films at various ranges showed large differences for deposition times below 90 s. From the results, 120 s is considered as the appropriate deposition time for Cr-doped Ni thin films to obtain the lowest resistivity, a low surface roughness, and a small difference of resistivity. The Cr-doped Ni thin films are prospective materials for microdevices as ultrathin film electrodes.

Effects of Film Formation Conditions on the Chemical Composition and the Semiconducting Properties of the Passive Film on Alloy 690

  • Jang, HeeJin;Kwon, HyukSang
    • Corrosion Science and Technology
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    • v.5 no.4
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    • pp.141-148
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    • 2006
  • The chemical composition and the semiconducting properties of the passive films formed on Alloy 690 in various film formation conditions were investigated by XPS, photocurrent measurement, and Mott-Schottky analysis. The XPS and photocurrent spectra showed that the passive films formed on Alloy 690 in pH 8.5 buffer solution at ambient temperature, in air at $400^{\circ}C$, and in PWR condition comprise $Cr_2O_3$, $Cr(OH)_3$, ${\gamma}-Fe_2O_3$, NiO, and $Ni(OH)_2$. The thermally grown oxide in air and the passive film formed at high potential (0.3 $V_{SCE}$) in pH 8.5 buffer solution were highly Cr-enriched, whereas the films formed in PWR condition and that formed at low potential (-0.3 $V_{SCE}$) in pH 8.5 buffer solution showed relatively high Ni content and low Cr content. The Mott-Schottky plots exhibited n-type semiconductivity, inferring that the semiconducting properties of the passive films formed on Alloy 690 in various film formation conditions are dominated by Cr-substituted ${\gamma}-Fe_2O_3$. The donor density, i.e., concentration of oxygen vacancy, was measured to be $1.2{\times}10^{21}{\sim}4.6{\times}10^{21}cm^{-3}$ and lowered with increase in the Cr content in the passive film.

Microstructural Investigation of CoCrFeMnNi High Entropy Alloy Oxynitride Films Prepared by Sputtering Using an Air Gas

  • Le, Duc Duy;Hong, Soon-Ku;Ngo, Trong Si;Lee, Jeongkuk;Park, Yun Chang;Hong, Sun Ig;Na, Young-Sang
    • Metals and materials international
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    • v.24 no.6
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    • pp.1285-1292
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    • 2018
  • Microstructural properties of as-grown and annealed CoCrFeMnNi high entropy alloy (HEA) oxynitride thin films were investigated. The CoCrFeMnNi HEA oxynitride thin film was grown by magnetron sputtering method using an air gas, and annealed under the argon plus air flow for 5 h at $800^{\circ}C$. The as-grown film was homogeneous and uniform composed of nanometer-sized crystalline regions mixed with amorphous-like phase. The crystalline phase in the as-grown film was face centered cubic structure with the lattice constant of 0.4242 nm. Significant microstructural changes were observed after the annealing process. First, it was fully recrystallized and grain growth happened. Second, Ni-rich region was observed in nanometer-scale range. Third, phase change happened and it was determined to be $Fe_3O_4$ spinel structure with the lattice constant of 0.8326 nm. Hardness and Young's modulus of the as-grown film were 4.1 and 150.5 GPa, while those were 9.4 and 156.4 GPa for the annealed film, respectively.

The effect of the process parameters on the electrical properties of Ni/Cr/Al/Cu alloy thin film (공정변수에 의한 Ni/Cr/Al/Cu계 박막의 전기적 특성)

  • 이붕주;박상무;박구범;박종관;이덕출
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.725-728
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    • 2001
  • We have fabricated thin films using the DC/RF magnetron sputtering of 74wt%Ni-l8wt%Cr-4wt%Al-4wt%Cu alloy target and studied the effect of the process parameters on the electrical properties for low TCR(Temperature Coefficient of Resistance) films. In sputtering process, pressure, power and substrate temperature, are varied as controllable parameter. The films are annealed to 400$^{\circ}C$ in air and nitrogen atmosphere. The sheet resistance, TCR of the films increases with increasing annealing temperature. It abruptly increased as annealing temperature increased over 300$^{\circ}C$ in air atmosphere. From XRD, it is found that these results are due to the existence of NiO on film surface formed by annealing. As a results of them, TCR can be controlled by variation of sputter process parameter and annealing of thin film.

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Electrical properties of NiCr thin films deposited by rf magnetron sputtering (RF magnetron sputtering 방법으로 제작한 NiCr 박막의 전기적특성)

  • Kim, Dae-Yeon;Kwon, Jeong-Ho;Jeong, Yeon-Hak;Lee, Jae-Shin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.11a
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    • pp.411-415
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    • 2002
  • Precision resistors were prepared by controlling the concentration of Ni and Cr deposited on cylindrical alumina substrates (diameter: 1.7mm, length: 5.5mm). Deposited films were analyzed with FESEM, AES, and AFM. As the amount of Cr in the film increases, the TCR was shifted to negative direction.

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Thickness Dependence of the Electrical Properties in NiCr Thin Film Resistors Annealed in a Vacuum Ambient for π - type Attenuator Applications

  • Phuong Nguyen Mai;Lee Won-Jae;Yoon Soon-Gil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.8
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    • pp.712-716
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    • 2006
  • NiCr thin films prepared on $SiO_2/Si$ substrates at room temperature by magnetron co-sputtering technique and then annealed in a vacuum ambient $(3{\times}10^{-6}\;Torr)\;at\;400^{\circ}C$. The grain size and crystallinity of the films increased with film thickness. The resistivity of the films slightly decreases as the film thickness increases, Temperature coefficient resistance (TCR) exhibits positive values irrespective of film thickness and TCR in the range of 50 to 400 nm thickness shows suitable values for the application of 10 dB in ${\pi}-type$ attenuators.

A Study on the Erosion-Resistant Cermet Film Coating using the Detonation Spray Method (폭발용사에 의한 내에로젼성 서멧 피막 코팅에 관한 연구)

  • 김현근;남인철;오재환
    • Journal of Welding and Joining
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    • v.19 no.1
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    • pp.95-103
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    • 2001
  • The properties of the detonation sprayed cermet coating are investigated through the mechanical, corrosion and erosion test. The test results are also compared with the properties of the substrate materials, STS 329J1, dual phase stainless steel and the plasma sprayed cermet coatings. The two kinds of carbide cermet power, WC+NiCr, Cr$_3$C$_2$+NiCr were used in this experiment. The experimental results showed that the anti-corrosive and anti-erosive properties of the detonation sprayed cermet coatings are superior to the plasma sprayed cermet coatings. The WC+NiCr cermet coating appears to be more effective than Cr$_3$C$_2$+NiCr cermet coating in abrasive erosion environment, whereas the Cr$_3$C$_2$+NiCr cermet coatings are more effective in cavitation erosion environment.

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Magnetic Properties of (Co-Cr)-P-Ni Alloy Thin Film ((Co-Cr)-P-Ni 합금 박막의 자기적 특성)

  • 박창민;신경호;손홍균;이택동
    • Journal of the Korean Magnetics Society
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    • v.5 no.2
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    • pp.134-139
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    • 1995
  • We produced $(Co_{93}Cr_{7})-P-Ni$ thin films for longitudinal magnetic recording media using OC magnetron sputtering system The variation of magnetic properties of $(Co_{93}Cr_{7})-P-Ni$ pseudo-ternary system with the composition was examined. We obtained the coercivity up to 1500 Oe. The coercivity iocrease could be ascribed to in-plane anisotropy enhaocement, grain size decrease, magnetic decoupling between particles. TEM micrographs showed that the grains were well-decoupled by the addition of phosphorous.

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