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Surface and Electrical Properties of 2 wt% Cr-doped Ni Ultrathin Film Electrode for MLCCs

  • Yim, Haena (Center for Electronic Materials, Korea Institute of Science and Technology) ;
  • Lee, JinJu (Center for Electronic Materials, Korea Institute of Science and Technology) ;
  • Choi, Ji-Won (Center for Electronic Materials, Korea Institute of Science and Technology)
  • Received : 2015.07.14
  • Accepted : 2015.07.21
  • Published : 2015.07.31

Abstract

In this study, 2 wt% Cr-doped Ni thin films were deposited using DC sputtering on a bare Si substrate using a 4 inch target at room temperature. In order to obtain ultrathin films from Cr-doped Ni thin films with high electrical properties and uniform surface, the micro-structure and electrical properties were investigated as a function of deposition time. For all deposition times, the Cr-doped Ni thin films had low average resistivity and small surface roughness. However, the resistivity of the Cr-doped Ni thin films at various ranges showed large differences for deposition times below 90 s. From the results, 120 s is considered as the appropriate deposition time for Cr-doped Ni thin films to obtain the lowest resistivity, a low surface roughness, and a small difference of resistivity. The Cr-doped Ni thin films are prospective materials for microdevices as ultrathin film electrodes.

Keywords

References

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