• Current Photovoltaic Research
• /
• v.8 no.2
• /
• pp.60-65
• /
• 2020

In perovskite solar cells with planar heterojunction configuration, selection of proper charge-transporting layers is very important to achieve stable and efficient device. Here, we developed solution processible Cu doped NiO_x (Cu:NiO_x) thin film as a hole-transporting layer (HTL) in p-i-n structured methylammonium lead trihalide (MAPbI₃) perovskite solar cell. The transmittance and thickness of NiO_x HTL is optimized by control the spin-coating rate and Cu is additionally doped to improve the surface morphology of undoped NiO_x thin film and hole-extraction properties. Consequently, a perovskite solar cell containing Cu:NiO_x HTL with optimal doping ratio of Cu exhibits a power conversion efficiency of 14.6%.

• Journal of Magnetics
• /
• v.12 no.2
• /
• pp.81-83
• /
• 2007

Etching of NiFe films covered with an organic photo-resist or Ti was successfully performed by an inductively coupled plasma-reactive ion etching (ICP-RIE) system using $CHF_3/O_2/NH_3$ discharges exchanging $CHF_3$ for $CH_4$ gas gradually. Experimental results showed that the organic photo-resist mask can be applied to the NiFe etching. In the case of the Ti metal mask, it was found that the etching-selectivity Ti against NiFe was significantly varied from 7.3 to ${\sim}0$ by changing $CHF_3/CH_4/O_2/NH_3$ to $CH_4/O_2/NH_3$ discharges used in the ICP-RIE system. These results show that the present RIE of NiFe was dominated by a chemical reaction rather than a physical sputtering.

• Current Photovoltaic Research
• /
• v.11 no.4
• /
• pp.103-107
• /
• 2023

A Nickel oxide (NiO_x) thin films were prepared via sol-gel process on a transparent conductive oxide glass substrate. The NiO_x thin films were spin-coated in ambient air and subsequently annealed for 30 minutes at temperatures ranging from 150℃ to 450℃. The structural and optical characteristics of the NiO_x thin films annealed at various temperatures were measured using X-ray diffraction, field emission scanning electron microscopy, and ultraviolet-visible spectroscopy. After optimizing the NiO_x coating conditions, perovskite solar cells were fabricated with p-i-n inverted structure, and its photovoltaic performance was evaluated. NiO_x thin films annealed at 350℃ exhibited the most favorable characteristics as a hole transport layer, resulting in the highest power conversion efficiency of 17.88 % when fabricating inverted perovskite solar cells using this film.

• Corrosion Science and Technology
• /
• v.22 no.5
• /
• pp.368-376
• /
• 2023

Dental Ni-Ti files must ensure stability and resistance to fatigue fracture. DLC and ta-C were coated to remove defects on the surface and ensure stability, and the surface characteristics were investigated. When coated with DLC, it was black, and in case of ta-C coating, it was blue-black. Scratches, which are defects caused by mechanical processing, were formed on the surface of the un-coated Ni-Ti file from the end of the file along the direction of processing, with the Pro-file appearing in the vertical direction and the K-file appearing in the file direction. Scratches were reduced on the coated surface, and the surface roughness was greatly reduced after coating compared to before coating. The un-coated Ni-Ti file had the lowest hardness, the DLC-coated file had the highest hardness, and ta-C showed relatively high hardness. The elastic modulus of the DLC coating film was high, and the ta-C elastic modulus was low. The adhesion of the DLC coating film tended to be higher than that of ta-C, and the wear loss amount of DLC coating of taC was lower. The corrosion potential of the ta-C coating increased significantly, and the corrosion current density decreased.

• Journal of the Microelectronics and Packaging Society
• /
• v.12 no.3 s.36
• /
• pp.253-258
• /
• 2005

Characteristics of electroplated Ni films such as grain size, resistivity, solder wetting angle, and growth rate of intermetallic compound were evaluated as a function of electroplating current density. With increasing the electroplating current density from $5\;mA/cm^2 $ to $40\;mA/cm^2 $, the nodule size on the Ni film surface decreased, grain refinement occurred, and resistivity increased from $7.37\mu\Omega-cm$ to $9.13\mu\Omega-cm$. Compared with Ni film processed at $40\;mA/cm^2 $, Ni films electroplated at $5\;mA/cm^2 $ and $10\;mA/cm^2 $ exhibited low resistivity, dense microstructure, and slow growth rate of intermetallic compound. Ni films electroplated at $5\;mA/cm^2 $ and $10\;mA/cm^2 $ are more suitable for Ni UBM application than that fabricated at $40\;mA/cm^2 $.

• Proceedings of the Korean Magnestics Society Conference
• /
• 1993.11a
• /
• pp.102-103
• /
• 1993

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1994.11a
• /
• pp.45-45
• /
• 1994

• 한국전기화학회:학술대회논문집
• /
• 1999.10a
• /
• pp.48-48
• /
• 1999

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.11a
• /
• pp.76-76
• /
• 2003

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2001.05a
• /
• pp.52-52
• /
• 2001