• Bulletin of the Korean Chemical Society
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• v.24 no.3
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• pp.325-333
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• 2003

An analysis of the electronic structure and bonding in the ternary silicide YNiSi₃is made, using extended Huckel tight-binding calculations. The YNiSi₃structure consists of Ni-capped Si₂dimer layers and Si zigzag chains. Significant bonding interactions are present between the silicon atoms in the structure. The oxidation state formalism of $(Y^{3+})(Ni^0)(Si^3)^{3-}$ for YNiSi₃constitutes a good starting point to describe its electronic structure. Si atoms receive electrons from the most electropositive Y in YNiSi₃, and Ni 3d and Si 3p states dominate below the Fermi level. There is an interesting electron balance between the two Si and Ni sublattices. Since the ${\pi}^*$ orbitals in the Si chain and the Ni d and s block levels are almost completely occupied, the charge balance for YNiSi₃can be rewritten as $(Y^{3+})(Ni^{2-})(Si^{2-})(Si-Si)^+$, making the Si₂layers oxidized. These results suggest that the Si zigzag chain contains single bonds and the Si₂double layer possesses single bonds within a dimer with a partial double bond character. Strong Si-Si and Ni-Si bonding interactions are important for giving stability to the structure, while essentially no metal-metal bonding exists at all. The 2D metallic behavior of this compound is due to the Si-Si interaction leading to dispersion of the several Si₂π bands crossing the Fermi level in the plane perpendicular to the crystallographic b axis.

• Korean Journal of Materials Research
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• v.17 no.7
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• pp.358-360
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• 2007

Cobalt subtitution on NiSi is investigated by using an ab-initio calculation. Firstly, a relaxed NiSi structure is calculated and the calculated lattice parameters are compared with experimentally determined lattice parameters. The calculated values are smaller than the experimental values by about 2%. As the calculation is based on 0 K, and the experimental measurement is performed at room temperature, those values are in good agreement. Next, a Co atom substitutes a Ni and Si site, respectively, to evaluate the preferable site between them. Co prefers Ni site to Si site. The calculated total energy also indicates that the Co substitution to Ni site stabilizes the NiSi structure. Therefore, the thermal stability of NiSi with Co addition can be achieved by the structure stabilization of NiSi by Co substitution into Ni site of NiSi.

• Journal of Energy Engineering
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• v.5 no.1
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• pp.65-71
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• 1996

Decomposition reaction of methanol was conducted on Ni-Cu/SiO$_2$catalysts with several variables. Variables used in this study are S.V(Space Velocity), partial pressure of methanol, reaction temperature, and composition rate of Ni-Cu. The range of S.V is 10,000-30,000h$\^$-1/, the temperature range is 150-400$^{\circ}C$ and values of Cu/(Ni＋Cu) are 0, 0.25, 0.5, 0.75, and 1. Over Ni/SiO$_2$, and Ni-Cu/SiO$_2$, the conversion rate of decomposition reaction of methanol arrived at 100% with increasing of temperature. At this time the selectivity of CO on Ni/SiO$_2$, was suddenly decreased, but on Ni-Cu/SiO$_2$, it was still sustained highly. The main products of reaction were CO and H$_2$, and by-products were CO$_2$ and CH$_4$mainly.

• Journal of Powder Materials
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• v.4 no.4
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• pp.298-303
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• 1997

The activated sintering behavior of $MoSi_2$ powder compacts with addition of 0.5 and 1.0 wt.%Ni during the sintering under As atmosphere was studied. The shrinkage was measured and the microstructures were observed by SEM (scanning electron microscopy) and BEI (backscattered electron image) along with the phase analysis by EDS during heating up to 155$0^{\circ}C$ and holding for various time at 155$0^{\circ}C$. The most of shrinkage occurred upon heating and 92% of theoretical density was attained after sintering for 1 hr at 155$0^{\circ}C$. However, little shrinkage ensued even for prolonged sintering over 1 hr at 155$0^{\circ}C$. A liquid film formed at about 135$0^{\circ}C$ along necks and grain boundaries. The polyhedral grain structure composed of $(Mo,Ni)_5Si_3$and $Ni_2Si$ across the $MoSi_2$ grain boundary developed at 155$0^{\circ}C$. It was concluded that the activated sintering of $MoSi_2$ powder by Ni led to the diffusion of Si into Ni decreasing the liquidus temperature and the enhanced diffusion of Mo and Si through such a liquid phase and/or interboundary of $(Mo,Ni)_5Si_3$.

• Korean Journal of Metals and Materials
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• v.47 no.5
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• pp.322-329
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• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.

• Journal of Powder Materials
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• v.6 no.3
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• pp.215-223
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• 1999

The synthesis of $Ni_5Si_2,\;Ni_2Si$ and NiSi has been investigated by mechanical alloying (MA) of Ni-27.9at%Si, Ni-33.3at%Si and Ni-50.0at%Si powder mixtures. As-received and premilled elemental powders were subjected to MA. The as-received Ni powder was spherical and the mean particle size 48.8$\mu$m, whereas the premilled Ni powder was flaky and the mean particle diameter and thickness were found to be 125 and 5$\mu$m, respectively. The mean surface area of the premilled Mi powder particle was 3.5 times as large as that of the as-received Ni powder particle. The as-received Si powder was was 10.0$\mu$m. Self-propagating high-temperature synthesis (SHS) reaction, followed by a slow reaction (a solid state diffusion), was observed to produce each Ni silicide during MA of the as-received elemental powders. In other word , the reactants and product coexisted for a long period of MA of time. Only SHS reaction was, however, observed to produce each Ni silicide during MA of the premilled elemental powders, indicating that each Ni sillicide formed rather abruptly at a short period of MA time. The mechanisms and reaction rates for the formation of the Ni silicides appeared to be influenced by the elemental powder particle size and shape as well as the heat of formation of the products $(Ni_5Si_2$longrightarrow-43.1kJ/mol.at., $Ni_2Si$$\rightarrow$-47.6kJ/mol.at.).

• Korean Chemical Engineering Research
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• v.57 no.5
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• pp.714-722
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• 2019

Catalysts were prepared by using incipient wetness impregnation method with 17 wt% Ni on a support ($SiO_2-Y_2O_3$, $Al_2O_3$, $SiO_2-ZrO_2$, $SiO_2$, $TiO_2$, MgO) and the catalytic activity in the reductive amination of ethanol with ammonia in the presence of hydrogen was compared and evaluated. The catalysts used before and after the reaction were characterized using X-ray diffraction, nitrogen adsorption, ethanol-temperature programmed desorption (EtOH-TPD), isopropanol-temperature programmed desorption (IPA-TPD), and hydrogen chemisorption etc. In the case of preparing $ZrO_2$ and $Y_2O_3$ supports, the small amount of Si dissolution from the Pyrex reactor surface provoked the formation of mixed oxides $SiO_2-ZrO_2$ and $SiO_2-Y_2O_3$. Among the catalysts used, $Ni/SiO_2-Y_2O_3$ catalyst showed the best activity, and this good activity was closely related to the highest nickel dispersion, and low desorption temperature in EtOH-TPD and IPA-TPD. The low catalytic activity on Ni/MgO catalysts showed low activity due to the formation of NiO-MgO solid-solutions. In the case of $Ni/TiO_2$, the reactivity was low due to the low nickel metal phase due to strong metal-support interaction. In the case of using a support as $SiO_2-Y_2O_3$, $Al_2O_3$, $SiO_2-ZrO_2$, and $SiO_2$, the selectivities of ethylamines and acetonitrile were not significantly different at similar ethanol conversion.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.245-248
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• 2002

In this paper, the influence of Si surface damage on the NiSi formation has been characterized. The silicon surface is damaged using ion beam type spotter. Then, the effect of H2 anneal and TiN capping layer on the damaged has also been analyzed. The sheet resistance of NiSi formed on damaged Si increased rapidly as the damaging time increases while thermal stability of damaged NiSi was stabler than the undamaged one. In the case when H\ulcorner anneal and TiN capping layer were applied together, the characteristics of NiSi shows a little improvement of the sheet resistance.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.106-106
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• 2003

반도체 소자의 고집적화에 따라 채널길이와 배선선 폭은 점차 줄어들고, 이에 따라 단채널효과, 소스/드레인에서의 기생저항 증가 및 게이트에서의 RC 시간지연 증가 등의 문제가 야기되었다. 이를 해결하기 위하여 자기정렬 실리사이드화(SADS) 공정을 통해 TiSi2, CoSi2 같은 금속 실리사이드를 접촉 및 게이트 전극으로 사용하려는 노력이 진행되고 있다. 그런데 TiSi2는 면저항의 선폭의존성 때문에, 그리고 CoSi2는 실리사이드 형성시 과도한 Si소모로 인해 차세대 MOSFET소자에 적용하기에는 한계가 있다. 반면, NiSi는 이러한 문제점을 나타내지 않고 저온 공정이 가능한 재료이다. 그러나, NiSi는 실리사이드 형성시 NiSi/Si 계면의 산화와 거침성(roughness) 때문에 높은 누설 전류와 면저항값, 그리고 열적 불안정성을 나타낸다. 한편, 초고집적 소자의 배선재료로는 비저항이 낮고 electro- 및 stress-migration에 대한 저항성이 높은 Cu가 사용될 전망이다. 그러나, Cu는 Si, SiO2, 실리사이드로 확산·반응하여 소자의 열적, 전기적, 기계적 특성을 저하시킨다. 따라서 Cu를 배선재료로 사용하기 위해서는 확산방지막이 필요하며, 확산방지재료로는 Ti, TiN, Ta, TaN 등이 많이 연구되고 있다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.10
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• pp.495-499
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• 2004

Characteristics of ohmic Ni/Si/Ni contacts to n-type 4H-SiC are investigated systematically. The ohmic contacts were formed by annealing Ni/Si/Ni sputtered sequentially The annealings were performed at 950℃ using RTP in vacuum ambient and N₂ ambient, respectively. The specific contact resistivity(p/sub c/), sheet resistance(R/sub s/), contact resistance (R/sub c/) transfer length(L/sub T/) were calculated from resistance(R/sub T/) versus contact spacing(d) measurements obtained from TLM(transmission line method) structure. While the resulting measurement values of sample annealed at vacuum ambient were p/sub c/ = 3.8×10/sup -5/Ω㎠, R/sub c/ = 4.9 Ω and R/sub T/ = 9.8 Ω, those of sample annealed at N₂ ambient were p/sub c/ = 2.29×10/sup -4/Ω㎠, R/sub c/ = 12.9 Ω and R/sub T/ = 25.8 Ω. The physical properties of contacts were examined using XRD 3nd AES. The results showed that nickel silicide was formed on SiC and Ni was migrated into SiC. This result indicates that Ni/Si/Ni ohmic contact would be useful in high performance electronic devices.