• Title/Summary/Keyword: Negative ion

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Chemical Structure and Isolation of Novel Glucosyltransferase Inhibitor from Artocarpus heterophyllus folium (Jack Fruit 잎으로부터 새로운 Glucosyltransferase 저해물질 분리 및 화학구조)

  • An, Bong-Jeun
    • Korean Journal of Food Science and Technology
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    • v.29 no.6
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    • pp.1304-1308
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    • 1997
  • In the course of studies for anti-plaque agents, novel procyanidin structure isolated from Artocarpus heterophyllus folium was established by thiolysis and spectroscopic analysis. The chemical structure was identified for $(-)-epiafzelecin-(4{\beta}{\rightarrow}8)-afzelecin-(4{\alpha}-8)-catechin$ containing the trimeric flavan-3-ols and molecular weight was 833[M-H] by FAB-MS negative ion method. The inhibitory effect on the glucosyltransferase activity was investigated, novel compound showed complete inhibition at 1.0 mM and inhibited on the glucosyltransferase noncompetitively.

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A study on the E-beam resist characteristics of plasma polymerized styrene (플라즈마중합 스티렌 박막의 e-beam 레지스트 특성에 관한 연구)

  • 이덕출;박종관
    • Electrical & Electronic Materials
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    • v.7 no.5
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    • pp.425-429
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    • 1994
  • In this paper, we study on the plasma polymerized styrene as a negative electron-beam resist. Plasma polymerized thin film was prepared using an interelectrode inductively coupled gas-flow type reactor. We show that polymerization parameters of thin film affect sensitivity and etching resistance of the resist. Molecular weight distribution of plasma polymerized styrene is 1.41-3.93, and deposition rates of that are 32-383[.angs./min] with discharge power. Swelling and etching resistance becomes . more improved with increasing discharge power during plasma polymerization. Etch rate by RIE is higher than that by plasma etching.

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XPS STUDY ON SN-DOPED DLC FILMS PREPARED BY RF PLASMA-ENHANCED CVD

  • Inoue, Y.;Komoguchi, T.;Nakata, H.;Takai, O.
    • Journal of the Korean institute of surface engineering
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    • v.29 no.5
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    • pp.519-524
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    • 1996
  • We synthesized semiconducting Sn-doped diamondlike carbon films by rf plasma-enhanced chemical vapor deposition using an organotin compound as a dopung gas source. XPS quan-titative analysis for the deposited films after 60 s argon ion etching revealed that Sn concen-tration increased with the partial pressure of the organotin compound in the reactant gas. In C 1s spectra, there was a component due to C-Su bond which had a negative chemical shift. C 1s spectra also indicated that the deposited films were relatively $sp^2$ rich. The chemical shift of the Sn-C bond in Sn $3d_{5/2}$ spectra was about +1.7 eV. The electrical resistivity and the optical transmittance were also investigated.

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Electrical Characteristics of Self-Assembled Organic Thin Films Using Ultra-High Vacuum Scanning Tunneling Microscopy (UHV STM을 이용한 유기 초박막의 전기적 특성 연구)

  • Kim, Seung-Un;Shin, Hoon-Kyu;Kwon, Young-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.108-111
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    • 2003
  • Currently, molecular devices are reported utilizing active self-assembled monolayers containing the nitro group as the active component, which has active redox centers[1]. We confirm the electrical properties of 4,4-di(ethynylphenyl)-2'-nitro-1-benzenethiolate. To deposit the SAM layer onto gold electrode, we transfer the prefabricated Au(111) substrates into a 1mM self-assembly molecules in THF solution. Au(111) substrates were prepared by ion beam sputtering method of gold onto the silicon wafer. As a result, we measured current-voltage curve using ultra high vacuum scanning tunneling microscopy (UHV STM), I-V curve also clearly shows several current peaks between the negative bias region (-0.3958V) and the positive bias region (0.4658V), respectively.

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Anomalous Stress-Induced Hump Effects in Amorphous Indium Gallium Zinc Oxide TFTs

  • Kim, Yu-Mi;Jeong, Kwang-Seok;Yun, Ho-Jin;Yang, Seung-Dong;Lee, Sang-Youl;Lee, Hi-Deok;Lee, Ga-Won
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.1
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    • pp.47-49
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    • 2012
  • In this paper, we investigated the anomalous hump in the bottom gate staggered a-IGZO TFTs. During the positive bias stress, a positive threshold voltage shift was observed in the transfer curve and an anomalous hump occurred as the stress time increased. The hump became more serious in higher gate bias stress while it was not observed under the negative bias stress. The analysis of constant gate bias stress indicated that the anomalous hump was influenced by the migration of positively charged mobile interstitial zinc ion towards the top side of the a-IGZO channel layer.

First-principles studies of the structural and electronic properties of rigid carbon nanofoam

  • Park, So-Ra;Kittimanapun, Kritsada;Ahn, Jeung-Sun;Tomanek, David;Kwon, Young-Kyun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.76-76
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    • 2010
  • Using ab initio density functional calculations, we investigate the structural and electronic properties of porous schwarzite structures formed by $sp^2$ carbon minimal surfaces with negative Gaussian curvature. We calculate the equilibrium geometries, elastic properties and electronic structure of two systems with cubic unit cells containing 152 and 200 carbon atoms, which are metallic and very rigid. The porous schwarzite structure can be efficiently doped by electron donors as well as accepors, making it a promising candidate for the next generation of alkali ion batteries. Furthermore, the schwarzite structures can be magnetic when doped and thus act as arrays of interconnected quantum spin dots. We also propose that two interpenetrating schwarzite structures be used as a ultimate super-capacitor.

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Low temperature preparation of $SnO_2$ films by ICP-CVD (ICP-CVD를 이용한 $SnO_2$ 박막 저온 증착)

  • Lee, H.Y.;Lee, J.J.
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2007.04a
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    • pp.157-158
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    • 2007
  • Tin oxide films were successfully crystallized without additional heating by inductively coupled plasma assisted chemical vapor deposition (ICP-CVD). The degree of crystallization was affected by the ICP power, hydrogen flow and ion bombardment induced by negative substrate bias. The substrate temperature was increased only up to $150^{\sim}180^{\circ}C$ by plasma heating, which suggests that the formation of $SnO_2$ crystalswas caused by enhanced reactivity of precursors in high density plasma. The hardness of deposited tin oxide films ranged from 5.5 to 11GPa at different hydrogen flow rates.

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Thermodynamic Properties of $NiFe_2O_4-NiFe_2O_4$ Spinel Solid Solution

  • 박봉훈;김동수
    • Bulletin of the Korean Chemical Society
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    • v.20 no.8
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    • pp.939-942
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    • 1999
  • The tie lines delineating ion-exchange equilibria between NiFe2O4-NiCr2O4 spinel solid solution and Fe2O3-Cr2O3 corundum solid solution were determined at 900, 1000, and 1200 ℃ by electron microprobe and energy dispersive X-ray analysis of oxide phases, using the flux growth technique. Activities of the spinel components were calculated from the tie lines, assuming Temkin's ideal mixing in the corundum solid solution. The spinel phase could be expressed by a regular solution with negative deviations from ideality. The Gibbs free energies of mixing for spinel solid solution were discussed in terms of the cation distribution model, based on site preference energies and assuming random mixing on both tetrahedral and octahedral sites.

Kinetics and Mechanism of the Aminolysis of Phenylacetyl Chlorides in Acetonitrile

  • 이해황;이지원;고한중;이익천
    • Bulletin of the Korean Chemical Society
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    • v.19 no.6
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    • pp.642-645
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    • 1998
  • The aminolysis reactions of phenylacetyl chlorides with anilines and N,N-dimethylanilines (DMAS) in acetonitrile at -15.0 ℃ are investigated. The magnitude of ρx (= -2.8 ∼ -2.9) and ρy (= 0.9 ∼ 1.3, after correcting for the fall-off), and the negative sign of ρxy (= -0.12) for the reactions with anilines suggest an associative SN2 mechanism. For the reactions with DMAs, the magnitude of these Hammett coefficients increases so that tighter bond making in the transition state (TS) is predicted. A nonlinear Hammett plots obtained for the DMAs with an electron acceptor substituent is interpreted to result from a more advanced degree of leaving group departure to assist closer approach of the bulky DMA in the TS. The normal secondary kinetic isotope effects $(k_H/k_D>1.0)$ involving deuterated anilines suggest partial deprotonation by hydrogen bonding to the departing chloride ion.

Performance prediction of flat sheet commercial nanofiltration membrane using Donnan-Steric Pore Model

  • Qadir, Danial;Nasir, Rizwan;Mukhtar, Hilmi;Uddin, Fahim
    • Membrane and Water Treatment
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    • v.12 no.2
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    • pp.59-64
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    • 2021
  • The rejection of sodium chloride (NaCl) and calcium chloride (CaCl2) single salt solutions were carried out for commercial nanofiltration NFDK membrane. Results showed that the NFDK membrane had a negative surface charge and had a higher observed rejection of 93.65% for calcium (Ca2+) ion and 78.27% for sodium (Na+) ions. Prediction of rejection for aqueous solutions of both salts was made using Donnan Steric Pore Model based on Extended Nernst-Planck Equation in addition to concentration polarization film theory. A MATLAB program was developed to execute the model calculations. Absolute Average Relative Error (% AARE) was found below 5% for real rejection of the NFDK membrane. This research could be used successfully to assess the membrane characterization parameter using a proposed procedure which can reduce the number of experiments.