• Title/Summary/Keyword: Negative bias

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The Low Temperature Deposition of CrN Films by the AIP Method (아크 이온플레이팅법에 의한 저온 CrN 합성)

  • Cho, Yong K.;Kim, Sang K.;Lee, Won B.;Kim, Sung W.
    • Journal of the Korean Society for Heat Treatment
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    • v.20 no.2
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    • pp.78-83
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    • 2007
  • CrN coatings were deposited by cathodic arc ion plating method on the SKD11 steel substrates. Atmosphere temperature of $350^{\circ}C$, arc current of 90 A, nitrogen partial pressure of 1.0-5.3 Pa, and negative bias voltage of 30-135 V were selected. The characteristics of microstructure were investigated with XRD. Hardness, adhesion and friction coefficient measured by microhardness tester, scratch tester, and ball on disk tribometer. Microstructures depended on nitrogen partial pressure and bias voltage. The preferred orientation of the films was changed from (200) to (111) with decreasing pressure and increasing bias voltage. Adhesion properties related with microstructure, but microstructure changes slightly influenced on hardness and friction properties. The critical load.($Lc_1$) and hardness of CrN films deposited at 5.3 Pa, -30 V condition were 55 N(HF1), $2157{\pm}47\;Hk_{0.025}$. The friction coefficient were about 0.5 under dry condition.

Oxygen Adsorption/Desorption Reaction of Pd-$SnO_x$-$Si_3N_4$-$SiO_2$-Si-Al Capacitor (D.C. 전압 인가에 의한 Pd-$SnO_x$-$Si_3N_4$-$SiO_2$-Si-Al 캐패시터의 산소흡착/탈착 반응)

  • Lee, Jae-Hong;Lee, Joo-Hun;Kim, Chang-Kyo
    • Proceedings of the KIEE Conference
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    • 1997.07d
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    • pp.1222-1225
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    • 1997
  • A gaseous oxygen detector has been developed in a configuration of Pd-$SnO_x$-$Si_3N_4$-$SiO_2$-Si-Al with highly resistive $SnO_x$ layer as the oxygen adsorptive element. In this paper, we present the characteristics of the device in response to oxygen adsoption/desorption under applied d.c. bias. Experimental results showed that the oxygen adsorptive response by the device was reduced significantly under a positive gate bias, for all experimental regions of $O_2$ partial pressure. On the other hand, the application of a negative gate bias increased the device's adsorptive response of oxgyen. A device model concerning this electroadsorption/desorption behavior of the device is provided.

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A study on the deposition of DLC thin films by using an FCVA technique (FCVA 방법에 의한 DLC 박막의 제작에 관한 연구)

  • Lee, Hae-Seung;Uhm, Hyun-Seok;Kim, Jong-Kuk;Choi, Byoung-Ryong;Park, Jin-Seok
    • Proceedings of the KIEE Conference
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    • 1997.07d
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    • pp.1379-1382
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    • 1997
  • Diamond-like carbon(DLC) thin films are produced by using a filtered cathodic vacuum arc(FCVA) deposition system. Different magnetic components, namely steering, focusing, and filtering plasma-optic systems, are used to achieve a stable arc plasma and to prevent the macroparticles from incorporating into the deposited films. Effects of magnetic fields on plasma behavior and film deposition are examined. The carbon ion energy is found to be varied by applying a negative (accelerating) substrate bias voltage. The deposition rate of DLC films is dependent upon magnetic field as well as substrate bias voltage and at a nominal deposition condition is about $2{\AA}/s$. The structural properties of DLC films, such as internal stress, relative fraction of tetrahedral($sp^3$) bonds, and surface roughness have also been characterized as a function of substrate bias voltages and partial gas($N_2$) pressures.

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Characterization of hydrogenated nanocrystalline silicon thin films prepared with various negative DC biases (직류 바이어스를 이용한 나노결정 실리콘의 구조 및 광학적 특성)

  • Shim, Jae-Hyun;Cho, Nam-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.37-37
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    • 2008
  • Hydrogenated nanocrystalline Si (nc-Si:H) thin films were prepared by plasma enhanced chemical vapor deposition (PECVD). The films were deposited with a radio frequency power of 100 W, while substrates were exposed to direct current (DC) biases in the range from 0 to -400 V. The effects of the DC bias on the formation of nanoscale Si crystallites in the films and on their optical characteristics were investigated. The size of the Si crystallites in the films ranges from ~ 1.9 to ~ 4.1 nm. The relative fraction of the crystallites in the films reached up ~ 56.5 % when the DC bias of -400 V was applied. Based on the variation in the structural, chemical, and optical features of the films with DC bias voltages, a model for the formation of nanostructures of the nc-Si:H films prepared by PECVD was suggested. This model can be utilized to understand the evolution in the size and relative fraction of the nanocrystallites as well as the amorphous matrix in the nc-Si:H films.

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Improvement of Suspended Solid Loads Estimation in Nakdong River Using Minimum Variance Unbiased Estimator (비편향 회귀분석모형을 이용한 낙동강 본류 부유사량 산정방법의 신뢰도 향상)

  • Han, Suhee;Kang, Du Kee;Shin, Hyun Suk;Yu, Jae-Jeong;Kim, Sangdan
    • Journal of Korean Society on Water Environment
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    • v.23 no.2
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    • pp.251-259
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    • 2007
  • In this study three log-transformed linear regression models are compared with the focus of bias correction problem. The models are the traditional simple linear regression estimator (SL), the quasi maximum likelihood estimator (QMLE) and the minimum variance unbiased estimator (MVUE). Using such models, suspended solid loads can be estimated using the discharge - suspended solid data set that has been measured by NIER Nakdong River Water Environment Laboratory. As a result, SL shows negative bias for most values of the measured discharge range. QMLE is nearly unbiased for moderate values of the measured discharge range, but shows increasingly positive bias for either large or small value of the measured discharge range. MVUE is unbiased. It is also analyzed how the estimated regression coefficient and exponent are distributed along Nakdong river main stream.

Factors Influencing on the Intention to Use Serious Games for Healthcare: The Perspective of Valence Framework (건강 기능성 게임의 수용에 영향을 주는 요인: 감정가 프레임워크 관점)

  • Yong-Young Kim
    • Journal of Information Technology Applications and Management
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    • v.31 no.1
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    • pp.97-112
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    • 2024
  • In order to verify the factors affecting the acceptance of Serious Games for Healthcare (SGHs), this study developed a hierarchical model of general and specific benefit and risk factors affecting the intention to use SGHs based on the valence framework. As a result based on 199 samples, it was revealed that perceived customization and perceived schedule flexibility had a positive effect on the perceived benefits, which, in turn, had a positive effect on the intention to use SGHs. However, among the specific risk factors, only privacy risk had a positive effect on perceived risk, but it did not have a effect on SGHs usage intention. The results related to the fact that the survey respondents were potential users of SGHs and the bias that may overestimate the benefits provided by SGHs called optimistic bias. Based on these findings, some implications were presented such as the spread and distribution of SGHs to the ordinary persons, improvement of negative perceptions of games, and the need for data-based services to refine customized services for SGHs.

Detection of SNPs using electrical biased method on diamond FETs (다이아몬드 FETs에서 전기적 바이어스 방법을 이용한 단일염기 다형성(SNPs) 검출)

  • Song, Kwang Soup
    • Journal of the Institute of Electronics and Information Engineers
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    • v.52 no.3
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    • pp.190-195
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    • 2015
  • The detection of single nucleotide polymorphisms (SNPs) caused of mutant or genetic diseases is important to diagnosis and medicine. There are many methods have been proposed to detect SNPs. However the detection of SNPs is difficulty, because the difference of energy between complementary DNA (cDMA) and SNPs is very small. In this work, we detect the SNPs using field-effect transistors (FETs) which based on the detection of negative charge of DNA. We bias -0.3 V on the drain-source electrode at the target DNA hybridization process. The efficiency of hybridization and the amplitude of signal decrease by repulsive force between negative charge of DNA and negative bias on the electrode. However, the sensitivity of SNPs increases about 5 times from 1.7 mV to 8.7 mV.

Design of a 512b Multi-Time Programmable Memory IPs for PMICs (PMIC용 512비트 MTP 메모리 IP설계)

  • Jang, Ji-Hye;Ha, Pan-Bong;Kim, Young-Hee
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.9 no.1
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    • pp.120-131
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    • 2016
  • In this paper, a 512b MTP memory IP is designed by using MTP memory cells which are written by the FN (Fowler-Nordheim) tunneling method with only MV (medium voltage) devices of 5V which uses the back-gate bias, that is VNN (negative voltage). The used MTP cell consists of a CG (control gate) capacitor, a TG (tunnel gate) transistor, and a select transistor. To reduce the size of the MTP memory cell, just two PWs (P-wells) are used: one for the TG and the select transistors; and the other for the CG capacitor. In addition, just one DNW (deep N-well) is used for the entire 512b memory cell array. VPP and VNN generators supplying pumping voltages of ${\pm}8V$ which are insensitive to PVT variations since VPP and VNN level detectors are designed by a regulated voltage, V1V (=1V), provided by a BGR voltage generator.

Effect of argon dilution on diamond nucleation with bias enhancement (바이어스 부가에 따른 다이아몬드 핵생성에서 아르곤 혼합의 효과)

  • 서형기;안사리S.G.;트란란안;신형식
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2002.05a
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    • pp.132-132
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    • 2002
  • Diamond is well known as the hardest material in nature. It also has other unique bulk physical and mechanical properties, such as very high thermal conductivity and broad optical transparency, which enable a number of new applications now that large areas of diamond can be fabricated by the new diamond plasma chemical vapor deposition (CVD) technologies. A study on the effects of growth kinetics and properties of diamond films obtained by addition of argon (~7 vol. %) into the methane/hydrogen mixture is carried out using HFCVD system. A negative bias was used as a nucleation enhancement method in addition to the argon dilution. The scanning electron microscopy (SEM) image of surface morphology shows well faceted crystallites with a predominance of angular shapes corresponding to <100> and <110> crystalline surfaces. The nucleation density and growth rate with argon dilution is two orders of magnitude higher than without argon deposition. The Raman spectra show a good quality film whereas XPS spectra show existence of only diamond phase.

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Photocurrent of CdSe nanocrystals on singlewalled carbon nanotube-field effect transistor

  • Jeong, Seung-Yol;Lim, Seung-Chu;Lee, Young-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.03b
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    • pp.40-40
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    • 2010
  • CdSe nanocrystals (NCs) have been decorated on singlewalled carbon nanotubes (SWCNTs) by combining a method of chemically modified substrate along with gate-bias control. CdSe/ZnS core/shell quantum dots were negatively charged by adding mercaptoacetic acid (MAA). The silicon oxide substrate was decorated by octadecyltrichlorosilane (OTS) and converted to hydrophobic surface. The negatively charged CdSe NCs were adsorbed on the SWCNT surface by applying the negative gate bias. The selective adsorption of CdSe quantum dots on SWCNTs was confirmed by confocal laser scanning microscope. The measured photocurrent clearly demonstrates that CdSe NCs decorated SWCNT can be used for photodetector and solar cell that are operable over a wide range of wavelengths.

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