Journal of the Institute of Electronics and Information Engineers (전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Detection of SNPs using electrical biased method on diamond FETs

다이아몬드 FETs에서 전기적 바이어스 방법을 이용한 단일염기 다형성(SNPs) 검출

  • Song, Kwang Soup (Medical IT Convergence Engineering, Kumoh National Institute of Technology)
  • 송광섭 (금오공과대학교 메디컬IT융합공학과)
  • Received : 2015.01.13
  • Accepted : 2015.03.04
  • Published : 2015.03.25
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Abstract

The detection of single nucleotide polymorphisms (SNPs) caused of mutant or genetic diseases is important to diagnosis and medicine. There are many methods have been proposed to detect SNPs. However the detection of SNPs is difficulty, because the difference of energy between complementary DNA (cDMA) and SNPs is very small. In this work, we detect the SNPs using field-effect transistors (FETs) which based on the detection of negative charge of DNA. We bias -0.3 V on the drain-source electrode at the target DNA hybridization process. The efficiency of hybridization and the amplitude of signal decrease by repulsive force between negative charge of DNA and negative bias on the electrode. However, the sensitivity of SNPs increases about 5 times from 1.7 mV to 8.7 mV.

돌연변이 및 유전병의 원인이 되고 있는 유전자 단일염기 다형성(single nucleotide polymorphisms; SNPs) 검출은 조기진단, 치료 및 제약등 바이오관련 분야에서 매우 중요하다. SNPs 검출을 위한 방법은 다양하게 제시되고 있으나 상보적 DNA와 SNPs의 에너지 차이가 미세하여 SNPs 검출에는 많은 어려움이 존재한다. 본 논문에서는 SNPs를 검출하기 위하여 전하 검출형 전계효과 트랜지스터(field-effect transistors; FETs)를 이용하여 DNA가 가지고 있는 음전하 측정 방법으로 SNPs를 검출하였다. 상보적 DNA와 SNPs의 미세한 에너지 차이를 구분하기 위하여 타게트 DNA hybridization공정에서 드레인-소스 전극에 -0.3 V의 음전압을 인가하였다. 음전압 인가에 따라 DNA 자체 음전하와 센서 표면의 음전압의 전기적 반발력에 의해 센서에 검출되는 타게트 DNA hybridization 신호 크기는 감소하였으나 상보적 DNA와 SNPs의 신호 차는 1.7 mV에서 8.7 mV로 5배 이상 증가하여 검출되었다.

Keywords

References

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