• 한국전기전자재료학회논문지
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• 제27권6호
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• pp.361-366
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• 2014

$MnO_2$-doped $0.985[Li_{0.04}(Na_{0.545}K_{0.46})_{0.96}(Nb_{0.81}Ta_{0.15}Sb_{0.04})]O_3+0.015KNbO_3(0.985LNKNTS+0.015KNbO_3)$ lead-free ceramics were fabricated by conventional solid state method to develop excellent dielectric and piezoelectric properties. The result of X-ray diffraction patterns obviously indicated that all of the specimen has pure perovskite structure without secondary phase. In addition, orthorhombic phase and coexistance region of orthorhombic-tetragonal phase (MPB) were observed with amount of $MnO_2$. The optimal values of ${\rho}$=4.70 $g/cm^3$, $d_{33}=238$ pC/N, $k_P=0.46$, $Q_m=121$, ${\varepsilon}_r=849$, and $T_C=225^{\circ}C$ were obtained at 0.01 mol% $MnO_2$ doped $0.985LNKNTS+0.015KNbO_3$ ceramics sintered at $990^{\circ}C$ for 5 h, respectively. Hence, it was indicated that the suitable amount of $MnO_2$ could improve the electrical properties of $0.985[Li_{0.04}(Na_{0.545}K_{0.46})_{0.96}(Nb_{0.81}Ta_{0.15}Sb_{0.04})]O_3+0.015KNbO_3$ ceramics.

• 한국재료학회지
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• 제12권6호
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• pp.464-469
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• 2002

$SrBi_2Nb_2O_9(SBN)$ thin films were grown on Pt/Ti/Si and p-type Si(100) substrates by rf-magnetron co-sputtering method using two ceramic targets, $SrNb_2O_6\; and \;Bi_2O_3$. The structural and electrical characteristics have been investigated to confirm the possibility of the SBN thin films for the applications to destructive and nondestructive read out ferroelectric random access memory(FRAM). For the optimum growth condition X-ray diffraction patterns showed that SBN films had well crystallized Bi-layered perovskite structure after $700^{\circ}C$ heat-treatment in furnace. From this specimen we got remnant polarization $(2P_r)$ of about 6 uC/$\textrm{cm}^2$ and coercive voltage $(V_c)$ of about 1.5 V at an applied voltage of 5 V. The leakage current density was $7.6{\times}10^{-7}$/A/$\textrm{cm}^2$ at an applied voltage of 5V. And for the NDRO-FRAM application, properties of SBN films on Si substrate has been investigated. From transmission electron microscopy (TEM) analysis, we found the furnace treated sample had a native oxide about 2 times thicker than the RTA treated sample and this thick native oxide layer had a bad effect on C-V characteristics of SBN/Si thin film. After $650^{\circ}C$ RTA process, we got the improved memory window of 1.3 V at an applied voltage of 5 V.

• 열처리공학회지
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• 제6권1호
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• pp.17-25
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• 1993

The Cu - $Nb_3Sn$ composites wire as a superconducting material was prepared by in situ method as follow: Cu - 15wt.% Nb alloys which were melted in a high -frequency induction furnace and casted in bar were cold-worked up to the final diameter of 0.24 mm, electroplated with Sn, pre-treated in two steps and then diffused at $550{\sim}650^{\circ}C$ for 24 ~ 96 hrs. The overall $J_c$ and $T_c$ of the specimens were measured by the four point-probe method at 10 K in the magnetic field of 0 Tesla. The overall $J_c$ of the composites wire which diffused at $550^{\circ}C$ after pre-treating in two steps were generally higher than those of the wire at either $600^{\circ}C$ or $650^{\circ}C$. For the specimens diffused at $550^{\circ}C$, the overall $J_c$ were increased until 72 hrs. of diffusion time and then decreased. However, in case of diffusion at $600^{\circ}C$ and $650^{\circ}C$, the overall $J_c$ were gradually decreased from the beginning. The maximum overall $J_c$ obtained in this experiment was $1.3{\times}10^4\;A/cm^2$, which was measured for the specimen diffused at $550^{\circ}C$ for 72 hrs. When the specimens were diffused at $550^{\circ}C$ for 72 hrs, after pre-treating, the measured critical temperature, $T_c$ was 16.19 K. Similar $T_c$ value were obtained in other specimens regardless of diffusion time and temperature.

• The Korean Journal of Ceramics
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• 제6권3호
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• pp.276-279
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• 2000

Ferroelectric properties of $SrBi_2TaNbO_9$ (SBTN) thin films were changed by the amount of Bi content in SBTN. We suggested that the addition of excess Bi into the films could be accomplished by heat-treating $SBTN/Bi_2O_3/SBTN$ heterostructure fabricated by r.f. magnetron sputtering method. Excess Bi composition was controlled by the thickness of the sandwiched $Bi_2O_3$ from 0 to $400\;\AA$. When the SBTN thin films were inserted by $400\;{\AA}\;Bi_2O_3$ layer, $Bi_2Pt$ phase was formed as a second phase in SBTN films, resulting in poor ferroelectric properties. The onset temperature for hysteresis loop can be reduced by heat treating $SBTN/Bi_2O_3/SBTN$ heterostructure. The films with $SBTN/Bi_2O_3(100\;{\AA})/SBTN$ hetero-structure followed by annealing at $650^{\circ}C$ for 30 min show 2Pr and Ec of $5.66\;{\mu}C/\textrm{cm}^2$ and 54 kV/cm, respectively.

• 한국세라믹학회지
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• 제38권11호
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• pp.962-966
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• 2001

Crystal structure of PbBi$_2$Nb$_2$$O_{9}$ and $Sr_{1.2}$$Bi_{1.8}$Ta$_2$$O_{9}$ were determined by Rietveld method using neutron diffraction data in the temperature range of 300 K~1273K. Phase transition temperature were measured from the dielectric permittivitytemperature curve. The PbBi$_2$Nb$_2$$O_{9}$ showed a phase transition at about 810 K. In the Sr-excess compound $Sr_{1.2}$$Bi_{1.8}$Ta$_2$$O_{9}$ the phase transition was suppressed down to room temperature. Several structural models were tested by the Rietiveld refinement. Based on the \`R\` values and the structural parameters, the B2cb model is judged to be the most feasible one for the high temperature phase at above 810 K of the PbBi$_2$Nb$_2$$O_{9}$. The $Sr_{1.2}$$Bi_{1.8}$Ta$_2$$O_{9}$ sample was refined to show the most reliable results by the Am2m model.sults by the Am2m model.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.221-224
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• 2000

The microwave dielectric properties of Ba(Mg$_{1}$3/Ta$_{2}$3/)O$_3$-xBa(Co$_{1}$3/Nb$_{2}$3/)O$_3$[BMT-BCN] ceramics were investigated. The specimens were prepared by the conventional mixed oxide method. It was found that Ba(Mg$_{1}$3/Ta$_{2}$3/)O$_3$ and Ba(Co$_{1}$3/Nb$_{2}$3/)O$_3$ formed a solid solution with complex perovskite structure. Increasing the BCN content, dielectric constant was increased, but temperature coefficient of resonant frequency was decreased. In the range of x$\geq$0.4, dielectric constant was about 30. 0.55BMT-0.45BCN ceramics showed excellent microwave dielectric properties with $\varepsilon$$_{r}$=30.84, Q$\times$f$_{0}$=75,325[GHz] and $\tau$$_{f}$=-2.9015[ppm/$^{\circ}C$].X>].

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.338-339
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• 2005

본 연구에서는 $Fe_2O_3$를 첨가한 $Pb(Ni_{1/3}Nb_{2/3})O_3-Pb(Zr_xTi_{1-x})O_3$ 세라믹스에서 Zr/Ti 비 변화에 따른 소결 및 압전, 유전특성을 조사하였다. $0.4Pb(Ni_{1/3}Nb_{2/3})O_3-0.6Pb(Zr_xTi_{1-x})O_3$+0.25Wt% $Fe_2O_3$ 계에서 Zr/(Ti+Zr)비(x)를 0.39에서 0.42까지 변화시킨 조성을 1100 - $1250^{\circ}C$ 온도에서 2시간 소결하여 이의 결정구조 및 미세조직을 분석하였고, 압전, 유전 특성 및 RAINBOW 액츄에이터로의 응용을 조사하였다. $1150^{\circ}C$에서 소결한 0.405 조성(x)에서 유전상수(${\varepsilon}r$) = 4669, 전기기계결합계수(kp) = 0.75, 압전상수($d_{33}$) = 810 pC/N의 우수한 특성 값을 나타내었으며, 닥터블레이드법에 의해 RAINBOW 액츄에이터를 제작하여 변위특성을 조사하였다.

• International Journal of Industrial Entomology and Biomaterials
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• 제9권2호
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• pp.193-198
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• 2004

Seasonal effects of the newly evolved bivoltine hybrid namely CSR$_2$${\times}$SR$_{5}$, SR$_1$ ${\times}$SR$_4$ and control hybrid KA${\times}$NB$_4$D$_2$ along with their parents SR$_1$, SR$_4$, SR$_{5}$, CSR$_2$ KA and NB$_4$D$_2$ were evaluated during different seasons of the year to understand genotype and environment interactions. Data were collected on five economic importance namely, pupation rate, cocoon yield, cocoon weight, cocoon shell ratio and filament length of the lines, hybrids and the control breeds/hybrid in three different seasons i.e., Pre-Monsoon, Monsoon and post-monsoon and subjected to relevant statistical methods. Seasonal performance of CSR$_2$, SR$_1$, SR$_4$ and SR$_{5}$ revealed superiority over control breeds KA and NB$_4$D$_2$. Both the hybrids i.e., CSR$_2$${\times}$SR$_{5}$ and SR$_1$${\times}$SR$_4$ performed well under diversified environmental conditions of tropical climate in a year indicating overall stability. These hybrids revealed highly significant (P < 0.01) variations for majority of the traits studied over the control hybrid KA${\times}$NB$_4$D$_2$.$.

• 한국전기전자재료학회논문지
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• 제36권2호
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• pp.191-196
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• 2023

In this paper, for the application of ultrasonic cleaners for cleaning dentures and transparent braces, Pb(Mn_1/3Nb_2/3)O₃-Pb(Ni_1/3 Nb_2/3)O₃-Pb(Zr,Ti)O₃ [PMN-PNN-PZT] system ceramics were manufactured and their dielectric and piezoelectric properties were investigated. Overall the best properties suitable for the device applications such as ultrasonic cleaner were obtained from the ceramics sintered at 920℃: bulk density of 7.8 g/cm³, the dielectric constant (ε_r) of 1,689, piezoelectric charge constant (d₃₃) of 433 pC/N, planar electromechanical coupling factor (k_p) of 0.64, mechanical quality factor (Qm) of 835, S₁₁^E of 13.37 (10^-12 N/m²), and Curie temperature of 315℃ By using the physical properties of this composition, the ultrasonic cleaner was designed and simulated using the commercial ATILA software. For the three-layered ceramics with the dimension of 25 mm × 25 mm × 2.5mm, an excellent displacement of 8.998 10^-3 m) and the sound pressure of 147.68 dB were recorded.

• 한국자기학회지
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• 제5권5호
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• pp.610-613
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• 1995

The effect of processing parameters such as milling, additives and sintering atmoshpere on the magnetic properties of Mn-Zn ferrite was investigated. The experiment was followed by general ceramic fabrication process and added additives were $CaCO_{3}$, $SiO_{2}$, $V_{2}O_{5}$, $ZrO_{2}$, and $Nb_{2}O_{5}$. The effects of additives could be divided into three categories which were formation ofliquid phase, substitution in lattice and inducing stress. Core loss smong the magnetic properties was dependent mainly on the additives and also correlated with processing parameters. As a result, an optimum condition of preparing process for a high quality Mn-Zn ferrite was suggested by controlling the correlation of each processing parameters.