• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1087-1091
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• 2005

Four-probe device of single ZnO nanowire was fabricated by electron beam lithography. Electrical characterizations in a two-probe and a four-probe configuration with a back-gate were carried out to clarify the relative contribution of the contact and the intrinsic part in a ZnO nanowire. I-V characteristic in four-probe measurement showed an ohmic behavior with a high conductivity, 100 S/cm, which was better than those of two-probe measurement by 10 times. At the same values of the current between two-probe and four-probe, the net voltage applied inside the nanowire were extracted with calculated voltages at the contact. Four-probe current-gate voltage characteristics showed bigger tendencies than those of two-probe measurement at low temperatures, indicating the reduced gate dependence in two-Probe measurements by the existence of the contact resistance.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.486-486
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• 2013

Silicon nanowire devices fabricated by bottom-up methods are attracted due to their electrical, mechanical, and optical properties. Especially, to functionalize the surface of silicon nanowires by molecules has received interests. The changes in the characteristics of the molecules is delivered directly to the surface of the silicon nanowires so that the silicon nanowire can be utilized as an efficient read-out device by using the electronic state change of molecules. The surface treatment of the silicon nanowire with light-sensitive molecules can change its optical characteristics greatly. In this paper, we present the optical response of a SiNW field-effect-transistor (FET) conjugated with porphyrin molecules. We fabricated a SiNW FET and performed porphyrin conjugation on its surface. The characteristic and the optical response of the device shows a large difference after conjugation while there is not much change of the surface in the SEM observation. It attributed to the existence of few layer porphyrin molecules on the SiNW surface and efficient variation of the surface potential of the SiNW due to light irradiation.

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.295-298
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• 2016

Future logic device over the FinFET generation requires a complete electrostatics and transport characteristic for low-power and high-speed operation as extremely scaled devices. Silicon, Germanium and III-V based nanowire-based MOSFET devices and few-layer TMDC (Transition metal dichalcogenide monolayers) based multi-gate devices have been brought attention from device engineers due to those excellent electrostatic and novel device characteristic. In this study, we simulated ultrascaled Si/Ge/InAs gate-all-around nanowire MOSFET and MoS2 TMDC based DG MOSFET and TFET device by tight-binding NEGF method. As a result, we can find promising candidates of the future logic device of each channel material and device structures.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.560-560
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• 2012

We report a one-step fabrication method of Poly(9,9-dioctylfluorene) (PFO) nanowire array with pronounced ${\beta}$-Phase. We use liquid-bridge-mediated nanotransfer molding (LB-nTM) which is a new direct nano-patterning method based on the direct transfer of various materials from a mold to a substrate via liquid layer. The formation of the ${\beta}$-phase morphology in the resulting PFO nanowire array was evidenced by the presence of an absorption peak at 435nm. With the collection polarizer oriented parallel to the wire long axis, the PL emission was most intense and an emission dichroic ratio, DRE, of 3.7 was determined. The nanowire array have been investigated by scanning electron microscopy (SEM). Also, we simply fabricated structure of device of ITO/PFO nanowire arrays/Al and the electroluminescence spectra were recorded at various applied voltage.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.3
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• pp.39-45
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• 2016

In this paper, prcess modeling of germanium condensation has been performed and a germanium PMOSFET having nanowire channel implented by the condensation process has been designed and characterized by device simulations. Based on the previous experimental results, our modeling results demonstrate that the ratio of germanium concentration at the silicon germanium-silicon dioxide interface ($C_S$) to that in the bulk region ($C_B$) which are obtainable during the germanium condensation is approximately 4.03 and the effective diffusion coefficient ($D_{eff}$) of germanium atom is $3.16nm^2/s$. Furthermore, a germanium nanowire-channel PMOSFET having the ultra-thin germanium channel on the silicon core that can be fabricated by the germanium condensation has been designed and characterized. As the result, it is confirmed that the proposed device having the coaxial nanowire consisting of silicon core and germanium channel might have superior performances over the device with either all-silicon or all-germanium channel.

• Progress in Superconductivity and Cryogenics
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• v.19 no.4
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• pp.22-25
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• 2017

Superconducting nanowire single photon detectors (SNSPD) have become the most competent photon-counting devices in wide range of wavelengths. Especially in the communication wavelength (infrared), SNSPD has shown unbeatable superior performance compared to the state-of-art semiconductor single photon detectors. The technology has matured enough for the last decade so that several commercial systems are now almost ready for routine use in general optics experiments. Here we summarize briefly the recent progress in this research field, and hope to motivate further research on the improvement of the device and the system. We cover the basic key concepts, device and system performances, remaining issues and possible further research directions of SNSPD.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.630-634
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• 2016

We report the computer aided design results for a GaSb/InAs broken-gap gate all around nanowire tunneling FET (TFET). In designing, the semi-empirical tight-binding (TB) method using $sp3d5s^*$ is used as band structure model to produce the bulk properties. The calculated band structure is cooperated with open boundary conditions (OBCs) and a three-dimensional $Schr{\ddot{o}}dinger$-Poisson solver to execute quantum transport simulators. We find an device configuration for the operation voltage of 0.3 V which exhibit desired low sub-threshold swing (< 60 mV/dec) by adopting receded gate configuration while maintaining the high current characteristic ($I_{ON}$ > $100 {\mu}A/{\mu}m$) that broken-gap TFETs normally have.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.2
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• pp.385-389
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• 2010

This paper presents a microfabricated nanowire diluter which dilutes the concentration of nanowires in solution instead of by the conventional centrifuge process. The device has 16 pairs of gold electrodes in a micro channel composed of a glass substrate and PDMS. We prepared nickel nanowires by the template-directed electrodeposition method using nanoporous anodized aluminum template (AAO). We injected the Dimethylformamide (DMF) solution containing nanowires into the inlet of the diluter while applying square wave voltages on the electrodes to trap the nanowires at the subsequent gold electrodes by means of dielectrophoretic attraction forces. The concentration of nanowires at the outlet of the micro channel was changed as we expected, which illustrates that the device can effectively dilute nanowires and can be applied to a controlled assembly of nanowires.

• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.266-268
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• 2013

In this paper, we study the channel doping concentration characteristics of junctionless nanowire transistors (JLT) using Edison nanowire FET device simulation. JLT has no junctions by very simple fabrication process. And this device has less variability and better electrical properties than classical inversion-mode transistors with PN junctions at the source and drain. In this simulation we use tri-gate structure. Source and drain doping concentration is $10^{20}atoms/cm^3$. The simulation results show that I-V characteristics of JLT change due to the variation of channel doping concentration.

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.73-76
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• 2021

This thesis described the optical and electrical properties of the alternating current powder electroluminescent device based on Ag nanowire as a transparent electrode. The Ag nanowire electrode showed the morphology of 20 nm in diameter and 15 ㎛ in length. The transparent electroluminescent devices that were fabricated using the nanomilled ZnS : Cu, Mn phosphor by bar-coating process showed the transmittance of 67%. In order to improve the luminous efficiency, it is necessary to apply the transparent dielectric layer and increase the amount of the nanophosphor while maintaining the transmittance.