• 제목/요약/키워드: Nanostructure material

검색결과 131건 처리시간 0.024초

Channel geometry-dependent characteristics in silicon nano-ribbon and nanowire FET for sensing applications

  • 최창용;황민영;김상식;구상모
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
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    • pp.33-33
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    • 2009
  • Silicon nano-structures have great potential in bionic sensor applications. Atomic force microscopy (AFM) anodic oxidation have many advantages for the nanostructure fabrication, such as simple process in atmosphere at room temperature, compatibility with conventional Si process. In this work, we fabricated simple FET structures with channel width W~ 10nm (nanowire) and $1{\mu}m$ (nano-ribbon) on ~10, 20 and 100nm-thinned silicon-on-insulator (SOI) wafers in order to investigate the surface effect on the transport characteristics of nano-channel. For further quantitative analysis, we carried out the 2D numerical simulations to investigate the effect of channel surface states on the carrier distribution behavior inside the channel. The simulated 2D cross-sectional structures of fabricated devices had channel heights of H ~ 10, 20, and 100nm, widths of L ~ $1{\mu}m$ and 10nm respectively, where we simultaneously varied the channel surface charge density from $1{\times}10^{-9}$ to $1{\times}10^{-7}C/cm2$. It has been shown that the side-wall charge of nanowire channel mainly affect the I-V characteristics and this was confirmed by the 2D numerical simulations.

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Fabrication of Superhydrophobic Aluminum Alloy Surface with Hierarchical Pore Nanostructure for Anti-Corrosion

  • Ji, Hyejeong;Jeong, Chanyoung
    • Corrosion Science and Technology
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    • 제18권6호
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    • pp.228-231
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    • 2019
  • Aluminum and its alloys have been widely used in various fields because of low weight, high strength, good conductivity, and low price. It is well known that aluminum alloys that cause natural oxide film can inhibit corrosion in wet, salty environments. However, these oxides are so thin that corrosion occurs in a variety of environments. To prevent this problem, an electrochemical anodizing technique was applied to the aluminum alloy surface to form a thick layer of oxide and a unique oxide shape, such as a hierarchical pore structure simultaneously combining large and small pores. The shape of the structures was implemented using stepwise anodization voltages such as 40 V for mild anodizing and 80 V for hard anodizing, respectively. To maximize water repellency, it is crucial to the role of surface structures shape. And a hydrophobic thin film was coated by 1H, 1H, 2H, 2H-Perfluorodecyltrichlorosilane (FDTS) to minimize surface energy of the structure surface. Thus, such nanoengineered superhydrophobic surface exhibited a high water contact angle and excellent corrosion resistance such as low corrosion current density and inhibition efficiency.

나노구조를 응용한 AlN 성장 방법 및 특성 (High Quality AlN Layer Regrown on AlN Nanostructure by Hydride Vapor Phase Epitaxy)

  • 손호기;김진원;임태영;이미재;김진호;전대우;황종희;오해곤;최영준;이혜용
    • 한국전기전자재료학회논문지
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    • 제28권11호
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    • pp.711-714
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    • 2015
  • In this paper, high quality AlN layers were regrown on AlN nanopillar structure with $SiO_2$-dots by HVPE. Surface morphology of AlN layer regrown exhibited flatter than a conventional AlN template. The laterally overgrown AlN regions would consist of a continuous well coalesced layer with lower dislocation density than in the template because of the dislocation blocking and dislocation bending effects. Moreover, result of Raman spectroscopy suggest that the AlN nanopillar structure with $SiO_2$-dots relieves the strain in the AlN layer regrown by HVPE.

ZnO nanopencils의 합성과 향상된 exciton-phonon interactions (Synthesis and enhancements of exciton-phonon interactions for ZnO nanopencils by thermal evaporation)

  • 안철현;우창호;배영숙;최미경;김영이;김동찬;공보현;조형균
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.45-45
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    • 2009
  • 우리는 ZnO Template를 사용한 열기상법을 이용하여 수직 배양한 ZnO nanorods와 ZnO Nanopencils를 성장하였고, Dependency temperature Photoluminescence(PL)의 분석을 통하여 광학적 특성에 대해 분석을 하였다. ZnO 나노구조는 100K 이하의 온도에서 donor-bound exciton가 dominant하고, 100K 이상의 온도에서는 free exciton과 그들의 phonon-replica emission이 dominant한 것을 알 수 있었다. 하지만, ZnO nanorods와 nanopencils은 다른 exciton-phonon coupling의 strength에 의한 surface defects에 의해 excitonic emissions의 다른 거동을 보이는 것을 알았다. 이것으로 인해 상온 PL에서 ZnO nanopencil은 nanorods에 비해 52meV의 red shift를 보였다.

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ZnO buffer 박막층 위에 성장된 3차원 ZnO 나노구조체의 합성 (Synthesis of 3D nanostructured flower-like ZnO architecture on ZnO thin-film by hydrothermal process)

  • 유범근;박용욱;강종윤;김진상;최두진;윤석진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.248-248
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    • 2009
  • Recently, the control of size, morphology and dimensionality in inorganic materials has been rapidly developed into a promising field in materials chemistry. 3D nanostructured flower-like ZnO architecture with different size and shapes have been simply synthesized via a hydrothermal process, using zinc acetate and ammonium hydroxide as reactants.[1] In this study, the Zno thin-films were deposited by RF magnetron sputtering in other to get high adhesion and uniformity of 3D nanostructured flower-like ZnO architecture on a $SiO_2$ substrate. The XRD patterns identified that the obtained the nanocrystallized ZnO architecture exhibited a wurtzite structure. SEM images illustrated that the flower-like ZnO bundles consisted of flower-like or chestnut bur, which were characterized by polycrystalline and [0001] preferential orientation.

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PbTe 열전재료에 형성된 HgTe 나노개제물의 석출거동: 초기 격자 불일치의 형성, 이론적 계산 및 실험적 증명 (Precipitation Behaviors of HgTe Nanoinclusions Formed in Thermoelectric PbTe: Initial Induced Lattice Mismatch, Theoretical Calculation and Experimental Verification)

  • 김경호;권태형;박수한;안형근;이만종
    • 한국전기전자재료학회논문지
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    • 제24권7호
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    • pp.599-604
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    • 2011
  • A highly strained nanostructure comprising crystallographically aligned HgTe nanoinclusions and a surrounding PbTe matrix has been synthesized using a precipitation process of supersaturated HgTe-PbTe alloys. From the early precipitation stage, HgTe nanoinclusions take disk shape, which is transformed from initial HgTe nuclei, although there is no lattice constant difference of the two end components at standard state. As a primary reason for the morphological transformation of the initial spherical HgTe nuclei to HgTe nanodisks, the induced lattice mismatch is suggested. On the condition that the HgTe nanodisks maintain perfect coherent nature with PbTe matrix, the stress-free lattice constant of constrained HgTe nanodisks has been calculated based on the defined concept of the strain-induced tetragonality, the linear elasticity and the actual measurement in HRTEM images.

Organic-Inorganic Hybrid Thermoelectric Material Synthesis and Properties

  • Kim, Jiwon;Lim, Jae-Hong
    • 한국세라믹학회지
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    • 제54권4호
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    • pp.272-277
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    • 2017
  • Organic-inorganic hybrid thermoelectric materials have obtained increasing attention because it opens the possibility of enhancing thermoelectric performance by utilizing the low thermal conductivity of organic thermoelectric materials and the high Seebeck coefficient of inorganic thermoelectric materials. Moreover, the organic-inorganic hybrid thermoelectric materials possess numerous advantages, including functional aspects such as flexibility or transparency, low cost raw materials, and simplified fabrication processes, thus, allowing for a wide range of potential applications. In this study, the types and synthesis methods of organic-inorganic thermoelectric hybrid materials were discussed along with the methods used to enhance their thermoelectric properties. As a key factor to maximize the thermoelectric performances of hybrid thermoelectric materials, the nanoengineering to control the nanostructure of the inorganic materials as well as the modification of the organic material structure and doping level are considered, respectively. Meanwhile, the interface between the inorganic and organic phase is also important to develop the hybrid thermoelectric module with excellent reliability and high thermoelectric efficiency in addition to its performance in various electronic devices.

MOCVD을 이용하여 자발적 및 인위적으로 제어된 산화아연 나노구조 (Self- and Artificially-Controlled ZnO Nanostructures by MOCVD)

  • 김상우
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.9-10
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    • 2005
  • We report on the fabrication and characterization of self- and artificially-controlled ZnO nanostructures have been investigated to establish nanostructure blocks for ZnO-based nanoscale device application. Systematic realization of self- and artificially-controlled ZnO nanostructures on $SiO_2/Si$ substrates was proposed and successfully demonstrated utilizing metalorganic chemical vapor deposition (MOCVD) in addition with a focused ion beam (FIB) technique. Widely well-aligned two-dimensional ZnO nanodot arrays ($4{\sim}10^4$ nanodots of 130-nm diameter and 9-nm height over $150{\sim}150{\mu}m^2$ with a period of 750 nm) have been realized by MOCVD on $SiO_2/Si$ substrates patterned by FIB. A low-magnification FIB nanopatterning mode allowed the periodical nanopatterning of the substrates over a large area in a short processing time. Ga atoms incorporated into the surface areas of FIB-patterned nanoholes during FIB engraving were found to play an important role in the artificial control of ZnO, resulting in the production of ZnO nanodot arrays on the FIB-nanopatterned areas. The nanodots evolved into dot clusters and rods with increasing MOCVD growth time.

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교류 전압에 의한 AAO 나노 구조 성장 제어 (AC based AAO NanoStructure Growth Control)

  • 박소정;허정환;이성민;이강호;김규태;박성찬;하정숙
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.87-88
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    • 2005
  • AAO(Anodic Aluminum Oxide)는 양극산화 방법을 이용하여 얻을 수 있는 알루미늄의 다공성 산화막이다. 기존의 방법에서는 DC전압을 이용하여 AAO를 성장시켰는데 본 연구에서는 AC전압을 이용하여 AAO의 성장 특성을 제어하였다. 전압원으로 DAQ를 사용하였는데 출력전압을 증폭하기 위하여 2 단 차동증폭기를 제작하였다. 실험 결과는 AAO 기판의 SEM 사진을 촬영, 분석함으로써 얻을 수 있었다. SEM 시진을 분석한 결과 pore size는 전압의 변화에 큰 영향을 받지 않음을 알 수 있었던 반면 성장 길이는 AC전압의 주기가 증가함에 따라 길어지는 성향을 확인할 수 있었다. 또한 주기와 AAO 성장 길이와의 관계를 로그스케일 그래프로 나타내보면 선형적인 특성을 나타내었다. 이를 통해 인가한 전압의 주파수에 따라 AAO의 성장 길이를 예측할 수 있었다.

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전자빔패턴을 이용한 나노구조물 형성과 에칭에 따른 나노선의 모양 변화 (Fabrication of nanostructures using electron beam lithography and the morphology change of nanowire via etching processes)

  • 전대영;김혜영;박소정;허정환;이형동;임찬영;김강현;김규태
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.17-18
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    • 2005
  • 실리콘 기판 위에 100nm의 선폭을 갖는 선들이 일정한 간격을 가지고 연속적으로 배열되어 있는 구조를 형성시켜 보았다. PMMA가 코팅되어 있는 실리콘 기판위에 전자빔으로 패턴을 하였고, 건식에칭을 통해 구조물을 형성한 후 원자 현미경으로 관찰하였다. 이러한 나노구조물의 구현은 전자빔 패터닝시에 전자빔이 실리콘 기판에 충돌할 때 나타나는 backward scattering과 proximity 효과 등의 영향으로 인해 pitch의 크기가 작아질수록 구현하기가 쉽지 않았다. 화합물반도체 단일 나노선 소자를 제작하여 소자의 전기적 특성을 측정할 때, 나노선 표면에 있는 자연산화막은 금속전극과 나노선 사이의 전기전도특성을 저해하는 요소로 알려져 있다. 이러한 자연산화막을 제거하기 위해 나노선을 건식에칭해 보았고, 원자현미경을 통해 에칭에 따른 나노선의 모양변화를 관찰하였다.

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