• Journal of the Korean Society of Manufacturing Process Engineers
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• v.19 no.11
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• pp.23-28
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• 2020

In general, lithography techniques are applied when machining single-crystal silicon in nanoscale applications; however, these techniques involve low degrees of freedom for the vertical shapes. By applying mechanical techniques to machine silicon, nanopatterns having various types of vertical shapes can be manufactured. In this study, we determined the ductile-brittle machining transition point and analyzed the- variation of the specific cutting resistance within the ductile machining region in nanoscale applications. When brittle fracture occurred during the nanoscale cutting, the depth of cut and cutting force increased and decreased rapidly, respectively. The first point of rapid increase in the depth of cut was defined as the ductile-brittle machining point. Subsequently, the shape of the machining tool was observed using a scanning electron microscope to calibrate the machining area, considering the tip blunting. The specific cutting resistance decreased continuously and converged to a certain value during the nanoscale cutting. The decrease and convergence in the value can be attributed to the decrease in the ratio of the arc length to the area of the machining tool and silicon.

• Journal of the Optical Society of Korea
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• v.18 no.1
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• pp.50-54
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• 2014

In this paper we studied the laser-induced crater depth, mass, and emission spectra of laser-ablated high-density polyethylene (HDPE) polymer using the laser-induced plasma spectroscopy (LIPS) technique. This study was performed using a Nd:YAG laser with 100 mJ energy and 7 ns pulse width, focused normal to the surface of the sample. The nanoscale change in ablated depth versus number of laser pulses was studied. By using scanning electron microscope (SEM) images, the crater depth and ablated mass were estimated. The LIPS spectral intensities were observed for major and minor elements with depth. The comparison between the LIPS results and SEM images showed that LIPS could be used to estimate the crater depth, which is of interest for some applications such as thin-film lithography measurements and online measurements of thickness in film deposition techniques.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.7 s.172
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• pp.62-70
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• 2005

The nanoindenter and AFM have been used for nanofabrication, such as nanolithography, nanowriting, and nanopatterning, as well as measurement of mechanical properties and surface topology. Nanoscale indents can be used as cells for molecular electronics and drug delivery, slots for integration into nanodevices, and defects for tailoring the structure and properties. Therefore, it is very important to make indents of desired morphology (shape, size and depth). Indents of different shapes can be obtained by using indenters of different geometries such as a cube comer and conical and spherical tips. The depth and size of indents can be controlled by making indentations at different indentation loads. However, in case of viscoplastic viscoelastic materials such as polymethylmethacrylate (PMMA) the time dependent deformation (TDD) should also be considered. In this study, the effect of process parameters such as loading rate and hold-time at peak load on the indent morphology (maximum penetration depth, elastic recovery, transient creep recovery, residual depth pile-up height) of PMMA were studied for hyperfine pattern fabrication.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.7 s.184
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• pp.138-145
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• 2006

A nanopatterning technique was proposed and demonstrated for low cost and mass productive process using the scanning probe lithography (SPL) and soft lithography. The nanometer scale structure is fabricated by the localized generation of oxide patterning on the H-passivated (100) silicon wafer, and soft lithography was performed to replicate of nanometer scale structures. Both height and width of the silicon oxidation is linear with the applied voltagein SPL, but the growth of width is more sensitive than that of height. The structure below 100 nm was fabricated using HF treatment. To overcome the structure height limitation, aqueous KOH orientation-dependent etching was performed on the H-passivated (100) silicon wafer. Soft lithography is also performed for the master replication process. Elastomeric stamp is fabricated by the replica molding technique with ultrasonic vibration. We showed that the elastomeric stamp with the depth of 60 nm and the width of 428 nm was acquired using the original master by SPL process.

• Journal of the Korean Vacuum Society
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• v.22 no.5
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• pp.262-269
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• 2013

Though focused ion beam (FIB) is one of the candidates to fabricate the nanoscale patterns, precision milling of nanoscale structures is not straightforward. Thus this poses challenges for novice FIB users. Optimal determination in FIB parameters is a crucial step to fabricate a desired nanoscale pattern. There are two main FIB parameters to consider, beam current (beam size) and dose (beam duration) for optimizing the milling condition. After fixing the dose, the proper beam current can be chosen considering both total milling time and resolution of the pattern. Then, using the chosen beam current, the metal nano hole structure can be perforated to the required depth by varying the dose. In this experiment, we found the adequate condition of $0.1nC/{\mu}m^2$ dose at 1 pA Ga ion beam current for 100 nm thickness perforation. With this condition, we perforated the periodic square array of elliptical nano holes.

• Journal of the Semiconductor & Display Technology
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• v.14 no.3
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• pp.1-5
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• 2015

In photolithography process, resolution enhancement techniques such as optical proximity correction (OPC) and phase shift mask (PSM) have been applied to improve resolution. Especially, sub-resolution assist feature (SRAF) is one of the most important OPC to enhance image quality including depth of focus (DOF). However, imaging performance of the mask could be varied with the diffraction order amplitude changed by inserting SRAF. Therefore, in this study, we investigated the imaging properties and process margin of attenuated PSM with SRAF. Reflectivities of attenuated PSMs at 13.5 nm were 3, 6, 9% and simulation was performed by $PROLITH^{TM}$. As a result, aerial image properties and DOF as well as diffraction efficiency were improved by increasing the reflectivity of attenuated PSM. Additionally, printed critical dimension variations depending on SRAF width and space error were also reduced for attenuated PSM with high reflectivity. However, SRAF could be printed when reflectivity of attenuated PSM is high enough. In conclusion, optimization of reflectivity of attenuated PSM and SRAF to prevent side-lobe from being printed is needed to be considered.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.67-68
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• 2002

The properties and mechanism of silicon protuberance and groove processing by diamond tip sliding using atomic force microscope (AFM) in atmosphere were studied. To control the height of protuberance and the depth of groove, the processed height and depth depended on load and diamond tip radius were evaluated. Nanoprotuberances and grooves were fabricated on a silicon surface by approximately 100-nm-radius diamond tip sliding using an atomic force microscope in atmosphere. To clarify the mechanical and chemical properties of these parts processed, changes in the protuberance and groove profiles due to additional diamond tip sliding and potassium hydroxide (KOH) solution etching were evaluated. Processed protuberances were negligibly removed, and processed grooves were easily removed by additional diamond tip sliding. The KOH solution selectively etched the unprocessed silicon area. while the protuberances, grooves and flat surfaces processed by diamond tip sliding were negligibly etched. Three-dimensional nanofabrication is performed in this study by utilizing these mechanic-chemically processed parts as protective etching mask for KOH solution etching.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.05a
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• pp.273-276
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• 2008

Thermoplastic resin takes place stress relaxation and creep according to temperature and time. In room temperature, time dependent deformation (TDD) of polymer was carried out at previous study. In this study, it evaluates time dependent deformation to relate temperature. Nanoscale indents can be used as cells for molecular electronics and drug delivery, slots for integration into nanodevices, and defects for tailoring the structure and properties. Therefore, it is important to control pattern depth for change of indent depth by creep when using Nanoindenter. For evaluating TDD at high temperature, it is occurred thermal-nanoindentation test by changing hold time at maximum load. Temperature is putted at $90^{\circ}C$, hold time at maximum loads are putted at 1, 10, 50, 100, 200, 300 and 500s.

• Applied Microscopy
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• v.43 no.1
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• pp.9-13
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• 2013

The helium ion microscope (HIM) has recently emerged as a novel tool for imaging and analysis. Based on a bright ion source and small probe, the HIM offers advantages over the conventional field emission scanning electron microscope. The key features of the HIM include (1) high resolution (ca. 0.25 nm), (2) great surface sensitivity, (3) great contrast, (4) large depth-of-field, (5) efficient charge control, (6) reduced specimen damage, and (7) nanomachining capability. Due to the charge neutralization by flood electron beam, there is no need for conductive metal coating for the observation of insulating biological specimens by HIM. There is growing evidence that the HIM has substantial potential for high-resolution imaging of uncoated insulating biological specimens at the nanoscale.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.2
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• pp.70-77
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• 2007

The application of focused ion beam(FIB) technology has been broadened in the fabrication of nanoscale regime. The extended application of FIB is dependent on complicated reciprocal relation of operating parameters. It is necessary for successful and efficient modifications on the surface of silicon substrate. The primary effect by Gaussian beam intensity is significantly shown from various aperture size, accelerating voltage, and beam current. Also, the secondary effect of other process factors - dwell time, pixel interval, scan mode, and pattern size has affected to etching results. For the process analysis, influence of the secondary factors on FIB micromilling process is examined with respect to sputtering depth during the milling process in silicon material. The results are analyzed by the ratio of signal to noise obtained using design of experiment in each parameter.