• 제목/요약/키워드: Nanoscale Structure

검색결과 162건 처리시간 0.027초

Intuitionistic Interval-Valued Fuzzy Topological Spaces

  • Lim, Pyung-Ki;Kim, Sun-Ho;Hur, Kul
    • 한국지능시스템학회논문지
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    • 제22권1호
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    • pp.126-134
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    • 2012
  • By using the concept of intuitionistic interval-valued fuzzy sets, we introduce the notion of intuitionistic interval-valued fuzzy topology. And we study some fundamental properties of intuitionistic interval-valued fuzzy topological spaces: First, we obtain analogues[see Theorem 3.11 and 3.12] of neighborhood systems in ordinary topological spaces. Second, we obtain the result[see Theorem 4.9] corresponding to "the 14-set Theorem" in ordinary topological spaces. Finally, we give the initial structure on intuitionistic interval-valued fuzzy topologies[see Theorem 5.9].

Tribo-Nanolithography를 이용한 액중 나노가공기술 개발 (Nanoscale Fabrication in Aqueous Solution using Tribo-Nanolithography)

  • 박정우;이득우
    • 한국정밀공학회지
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    • 제22권2호
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    • pp.194-201
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    • 2005
  • Nanoscale fabrication of silicon substrate in an aqueous solution based on the use of atomic force microscopy was demonstrated. A specially designed cantilever with diamond tip, allowing the formation of damaged layer on silicon substrate easily by a simple scratching process (Tribo-Nanolithography, TNL), has been applied instead of conventional silicon cantilever for scanning. A slant nanostructure can be fabricated by a process in which a thin damaged layer rapidly forms in the substrate at the diamond tip-sample junction along scanning path of the tip and simultaneously the area uncovered with the damaged layer is being etched. This study demonstrates how the TNL parameters can affect the formation of damaged layer and the shape of 3-D structure, hence introducing a new process of AFM-based nanolithography in aqueous solution.

Nanoscale Fabrication in Aqueous Solution using Tribo-Nanolithography

  • Park, Jeong-Woo;Lee, Deug-Woo;Kawasegi, Noritaka;Morita, Noboru
    • International Journal of Precision Engineering and Manufacturing
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    • 제7권4호
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    • pp.8-13
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    • 2006
  • Nanoscale fabrication of silicon substrate in an aqueous solution based on the use of atomic force microscopy was demonstrated. A specially designed cantilever with a diamond tip, allowing the formation of a mask layer on the silicon substrate by a simple scratching process (Tribo-Nanolithography, TNL), has been applied instead of the conventional silicon cantilever for scanning. A slant nanostructure can be fabricated by a process in which a thin mask layer rapidly forms on the substrate at the diamond tip-sample junction along scanning path of the tip, and simultaneously, the area uncovered with the mask layer is etched. This study demonstrates how the TNL parameters can affect the formation of the mask layer and the shape of 3-D structure, hence introducing a new process of AFM-based nanolithography in aqueous solution.

Single-bit digital comparator circuit design using quantum-dot cellular automata nanotechnology

  • Vijay Kumar Sharma
    • ETRI Journal
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    • 제45권3호
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    • pp.534-542
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    • 2023
  • The large amount of secondary effects in complementary metal-oxide-semiconductor technology limits its application in the ultra-nanoscale region. Circuit designers explore a new technology for the ultra-nanoscale region, which is the quantum-dot cellular automata (QCA). Low-energy dissipation, high speed, and area efficiency are the key features of the QCA technology. This research proposes a novel, low-complexity, QCA-based one-bit digital comparator circuit for the ultra-nanoscale region. The performance of the proposed comparator circuit is presented in detail in this paper and compared with that of existing designs. The proposed QCA structure for the comparator circuit only consists of 19 QCA cells with two clock phases. QCA Designer-E and QCA Pro tools are applied to estimate the total energy dissipation. The proposed comparator saves 24.00% QCA cells, 25.00% cell area, 37.50% layout cost, and 78.11% energy dissipation compared with the best reported similar design.

원자층증착법으로 증착된 강유전성 플루오라이트 구조 강유전체 박막의 불순물 효과 (A brief review on the effect of impurities on the atomic layer deposited fluorite-structure ferroelectrics)

  • 이동현;양건;박주용;박민혁
    • 한국표면공학회지
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    • 제53권4호
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    • pp.169-181
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    • 2020
  • The ferroelectricity in emerging fluorite-structure oxides such as HfO2 and ZrO2 has attracted increasing interest since 2011. Different from conventional ferroelectrics, the fluorite-structure ferroelectrics could be reliably scaled down below 10 nm thickness with established atomic layer deposition technique. However, defects such as carbon, hydrogen, and nitrogen atoms in fluorite-structure ferroelectrics are reported to strongly affect the nanoscale polymorphism and resulting ferroelectricity. The characteristic nanoscale polymorphism and resulting ferroelectricity in fluorite-structure oxides have been reported to be influenced by defect concentration. Moreover, the conduction of charge carriers through fluorite-structure ferroelectrics is affected by impurities. In this review, the origin and effects of various kinds of defects are reviewed based on existing literature.

Nanoscale NAND SONOS memory devices including a Seperated double-gate FinFET structure

  • Kim, Hyun-Joo;Kim, Kyeong-Rok;Kwack, Kae-Dal
    • 한국신뢰성학회지:신뢰성응용연구
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    • 제10권1호
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    • pp.65-71
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    • 2010
  • NAND-type SONOS with a separated double-gate FinFET structure (SDF-Fin SONOS) flash memory devices are proposed to reduce the unit cell size of the memory device and increase the memory density in comparison with conventional non volatile memory devices. The proposed memory device consists of a pair of control gates separated along the direction of the Fin width. There are two unique alternative technologies in this study. One is a channel doping method and the other is an oxide thickness variation method, which are used to operate the SDF-Fin SONOS memory device as two-bit. The fabrication processes and the device characteristics are simulated by using technology comuter-adided(TCAD). The simulation results indicate that the charge trap probability depends on the different channel doping concentration and the tunneling oxide thickness. The proposed SDG-Fin SONOS memory devices hold promise for potential application.

Three-Dimensional Automated Crystal Orientation and Phase Mapping Analysis of Epitaxially Grown Thin Film Interfaces by Using Transmission Electron Microscopy

  • Kim, Chang-Yeon;Lee, Ji-Hyun;Yoo, Seung Jo;Lee, Seok-Hoon;Kim, Jin-Gyu
    • Applied Microscopy
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    • 제45권3호
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    • pp.183-188
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    • 2015
  • Due to the miniaturization of semiconductor devices, their crystal structure on the nanoscale must be analyzed. However, scanning electron microscope-electron backscatter diffraction (EBSD) has a limitation of resolution in nanoscale and high-resolution electron microscopy (HREM) can be used to analyze restrictive local structural information. In this study, three-dimensional (3D) automated crystal orientation and phase mapping using transmission electron microscopy (TEM) (3D TEM-EBSD) was used to identify the crystal structure relationship between an epitaxially grown CdS interfacial layer and a $Cu(In_xGa_{x-1})Se_2$ (CIGS) solar cell layer. The 3D TEM-EBSD technique clearly defined the crystal orientation and phase of the epitaxially grown layers, making it useful for establishing the growth mechanism of functional nano-materials.

A Rapid and Simple Homogenizing Method for the Purification of Single-walled Carbon Nanotubes

  • Choi, Sang-Kyu;Jung, Seung-Il;Lee, Seung-Beck
    • Transactions on Electrical and Electronic Materials
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    • 제9권5호
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    • pp.209-212
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    • 2008
  • We developed a simple and effective purification method to obtain high-purity single-walled carbon nanotubes (SWCNTs) with low surface damage. The purification process consists of oxidization at $430^{\circ}C$ for 1 h in a furnace system of air atmosphere and homogenization in dilute hydrochloric acid solution for extremely short time. The role of homogenizer was examined during purification process in terms of purity and quality of purified SWCNTs. High-purity and low surface damage of SWCNT products was obtained using homogenizer which was operated at 8500 rpm for 10 min in the environment of 7 % HCI solution. From XRD spectra, we observed that metal catalysts were thoroughly removed. Raman spectra showed that the intensity values of crystallization ($I_{G}/I_{D}$) of purified SWCNTs were very similar with that of pristine SWCNTs. Moreover, the structure damage of purified SWCNTs was hard to find from electron microscopy. Consequently, homogenizing, which is a quick and simple manner, can be promising method for obtaining final SWCNTs with clearly high purity and crystallinity.

Evolution the surface morphology and mechanical properties of Polyimide induced by Ion Beam Irradiation

  • Ahmed, Sk. Faruque;Nho, Gun-Ho;Moon, Myoung-Woon;Han, Jun-Hyun;Lee, Kwang-Ryeol
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.98-98
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    • 2010
  • Ion beam irradiation has been extensively used for surface modification of polymers, glassy metals and amorphous and crystalline materials at micron and submicron scales. The surface structures created by exposure to an ion beam range from dots, steps and one-dimensional straight wrinkles to highly complex hierarchical undulations and ripples. In general, the morphology of these nanoscale features can be selected by controlling the ion beam parameters (e.g. fluence and acceleration voltage), making ion beam irradiation a promising method for the surface engineering of materials. In the work, we presented that ion beam irradiation results in creation of a peculiar nanoscale dimple-like structure on the surface of polyimide - a common polymer in electronics, large scale structures, automobile industry, and biomedical applications. The role of broad Ar ion beam on the morphology of the structural features was investigated and insights into the mechanisms of formation of these nanoscale features were provided. Moreover, a systematic experimental study was performed to quantify the role of ion beam treatment time, and thus the morphology, on the coefficient of friction of polyimide surfaces covered by nanostructure using a tribo-experiment. Nano-indentation experiment were performed on the ion beam treated surfaces which shows that the hardness as well as the elastic modulus of the polyimide surface increased with increase of Ar ion beam treatment time. The increased of hardness of polyimide have been explained in terms of surface structure as well as morphology changes induced by Ar ion beam treatment.

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Dynamic analysis of functionally graded nonlocal nanobeam with different porosity models

  • Ghandourh, Emad E.;Abdraboh, Azza M.
    • Steel and Composite Structures
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    • 제36권3호
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    • pp.293-305
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    • 2020
  • This article presented a nanoscale modified continuum model to investigate the free vibration of functionally graded (FG) porous nanobeam by using finite element method. The main novelty of this manuscript is presenting effects of four different porosity models on vibration behaviors of nonlocal nanobeam structure including size effect, that not be discussed before The proposed porosity models are, uniform porosity distribution, symmetric with mid-plane, bottom surface distribution and top surface distribution. The nano-scale effect is included in modified model by using the differential nonlocal continuum theory of Eringen that adding the length scale into the constitutive equations as a material parameter constant. The graded material is distributed through the beam thickness by a generalized power law function. The beam is simply supported, and it is assumed to be thin. Therefore, the kinematic assumptions of Euler-Bernoulli beam theory are held. The mathematical model is solved numerically using the finite element method. Results demonstrate effects of porosity type, material gradation, and nanoscale parameters on the free vibration of nanobeam. The proposed model is effective in vibration analysis of NEMS structure manufactured by porous functionally graded materials.