• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1934-1938
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• 2008

Formation of air bubble is the one of common defects in UV nano imprint lithography. Location of dispensing and volume of droplets are among the most important parameters in the process. ]n this study, UV curable resin droplets with different volumes were dispensed at different locations and pressed to investigate air bubble formation. By varying volume of droplet and dispensing location, process conditions were found for minimum air bubble area.

• Journal of information and communication convergence engineering
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• 제13권1호
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• pp.56-61
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• 2015

The demand for high-aspect-ratio structures has been increasing in the field of semiconductors and other applications. Here, we present the commercially available negative-tone SU-8 as a potential resist that can be used for direct patterning of high-aspect-ratio structures at the submicron scale and the nanoscale. Such resist patterns can be used as polymeric molds to create high-aspect-ratio metallic submicron and nanoscale structures by using electroplating. Compared with poly (methyl methacrylate) (PMMA), we found that the negative tone resist required an exposure dose that was less than that of PMMA of equal thickness by a factor of 100-150. Patterning of up to 4:1 aspect ratio SU-8 structures with a minimum feature size of 500 nm was demonstrated. In addition, nanoimprint lithography was studied to further extend the aspect ratio to realize a minimum feature size of less than 10 nm with an extremely high aspect ratio in the negative resist.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 춘계학술발표대회 및 제12회 신소재 심포지엄
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• pp.38.1-38.1
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• 2007

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2007년도 춘계학술대회 논문집
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• pp.673-674
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• 2007

• 전자공학회지
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• 제33권4호
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• pp.39-48
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• 2006

• 한국생산제조학회지
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• 제20권6호
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• pp.756-760
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• 2011

This paper proposed an alignment stage driven by piezo actuators for alignment process of a contact-type lithography. Among contact-type lithography processes, an UV-curable nanoimprint process is an unique process to be able to align patterns on upper and lower layers. An alignment stage of the UV-curable nanoimprint process requires nano-level resolution as well as high stiffness to overcome friction force due to contact moving. In this paper, the alignment stage consists of a compliant mechanism using flexure hinges, piezo actuators for high force generation, and capacitive sensors for high-resolution measurement. The compliant mechanism is implemented by four prismatic-prismatic compliant chains for two degree-of-freedom translations. The compliant mechanism is composed of flexure hinges with high stiffness, and it is directly actuated by the piezo actuators which increases the stiffness of the mechanism, also. The performance of the ultra-precision stage is demonstrated by experiments.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1939-1943
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• 2008

Deformation of a mold is measured and analyzed in alignment and curing processes of UV-Imprint Lithography. We are focused on mold deformation caused by a UV resin, which is laminated between a mold and a target glass-panel. The UV resin is viscous in case of liquid state, and the resin will be solidified when being exposed by the ultra-violet light. The viscosity of the resin causes shear force on the mold during the alignment process. Moreover, the shrinkage during phase change from liquid to solid may cause residual stress on the mold. The experiments for measuring temperature and strain are made during alignment and curing process. Strain-gages and thermocouples are used for measuring the strain and variation of temperature on several points of the mold, respectively. The deformation of mold is also simulated and analyzed. The simulation results are compared with the experiments. Finally, sources of alignment errors in large area UV-nanoimprint lithography are discussed.

• 한국재료학회지
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• 제26권11호
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• pp.635-643
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• 2016

Graphene has shown exceptional properties for high performance devices due to its high carrier mobility. Of particular interest is the potential use of graphene nanoribbons as field-effect transistors. Herein, we introduce a facile approach to the fabrication of graphene nanoribbon (GNR) arrays with ~200 nm width using nanoimprint lithography (NIL), which is a simple and robust method for patterning with high fidelity over a large area. To realize a 2D material-based device, we integrated the graphene nanoribbon arrays in field effect transistors (GNR-FETs) using conventional lithography and metallization on highly-doped $Si/SiO_2$ substrate. Consequently, we observed an enhancement of the performance of the GNR-transistors compared to that of the micro-ribbon graphene transistors. Besides this, using a transfer printing process on a flexible polymeric substrate, we demonstrated graphene-silicon junction structures that use CVD grown graphene as flexible electrodes for Si based transistors.

• 한국진공학회지
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• 제19권2호
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• pp.96-104
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• 2010

NIL, S-FIL과 같은 각인 기술(Imprinting lithography)를 적용하기 위한 투명하고 단단한 복제 틀(replica hard mold)을 제작하여 고가의 원판(master)와 패턴이 형성되는 기판과의 접촉을 근본적으로 방지해 경제적인 공정이 가능함을 제안한다. 실리콘 웨이퍼(Si wafer)와 같은 원판(master)과 패턴 형성 시 사용되는 기판과 직접적인 접촉을 방지하기 위해 우선 액상 공정을 이용하여 비접착성 표면처리된 고분자 복제(polymer copy)를 매개체(carrier)로 단단한 복제 틀을 제작한다. 이렇게 제작된 단단한 복제 틀(replica hard mold)는 유리와 거의 같은 강도와 투명도를 나타내며, 각인 공정(imprinting process)에서 석영 틀, 실리콘 웨이퍼(quartz mold, Si wafer)과 같이 값비싼 원판(master)의 직접 사용을 대체하여 성공적으로 패턴을 구현할 수 있다.

• 반도체디스플레이기술학회지
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• 제11권4호
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• pp.37-42
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• 2012

Nanoimprint lithography (NIL) has attracted broad interest as a low cost method to define nanometer scale patterns in recent years. A major disadvantage of thermal NIL is the thermal cycle, that is, heating over glass transition temperature and then cooling below it, which requires a significant amount of processing time and limits the throughput. One of the methods to overcome this disadvantage is to improve the cooling performance in NIL process. In this paper, the performance of the cooling system of thermal NIL is numerically investigated by SolidWorks Flow Simulation program. The calculated temperatures of nanoimprint device were verified by the measurements. By using the analysis model, the effects of the change of flow velocity and cooler location on the cooling performance are investigated. For the 6 cases (0.1 m/s, 0.5 m/s, 1 m/s, 3 m/s, 5 m/s, 10 m/s) of flow velocity and for the 6 cases of distances (50 mm, 40 mm, 30 mm, 20 mm, 10 mm, 1 mm) of cooler location, the heat conjugated flow analyses are performed and discussed.