• Proceedings of the KSME Conference
• /
• 2008.11a
• /
• pp.1934-1938
• /
• 2008

Formation of air bubble is the one of common defects in UV nano imprint lithography. Location of dispensing and volume of droplets are among the most important parameters in the process. ]n this study, UV curable resin droplets with different volumes were dispensed at different locations and pressed to investigate air bubble formation. By varying volume of droplet and dispensing location, process conditions were found for minimum air bubble area.

• Journal of information and communication convergence engineering
• /
• v.13 no.1
• /
• pp.56-61
• /
• 2015

The demand for high-aspect-ratio structures has been increasing in the field of semiconductors and other applications. Here, we present the commercially available negative-tone SU-8 as a potential resist that can be used for direct patterning of high-aspect-ratio structures at the submicron scale and the nanoscale. Such resist patterns can be used as polymeric molds to create high-aspect-ratio metallic submicron and nanoscale structures by using electroplating. Compared with poly (methyl methacrylate) (PMMA), we found that the negative tone resist required an exposure dose that was less than that of PMMA of equal thickness by a factor of 100-150. Patterning of up to 4:1 aspect ratio SU-8 structures with a minimum feature size of 500 nm was demonstrated. In addition, nanoimprint lithography was studied to further extend the aspect ratio to realize a minimum feature size of less than 10 nm with an extremely high aspect ratio in the negative resist.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2007.05a
• /
• pp.38.1-38.1
• /
• 2007

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2007.06a
• /
• pp.673-674
• /
• 2007

• The Magazine of the IEIE
• /
• v.33 no.4 s.263
• /
• pp.39-48
• /
• 2006

• Journal of the Korean Society of Manufacturing Technology Engineers
• /
• v.20 no.6
• /
• pp.756-760
• /
• 2011

This paper proposed an alignment stage driven by piezo actuators for alignment process of a contact-type lithography. Among contact-type lithography processes, an UV-curable nanoimprint process is an unique process to be able to align patterns on upper and lower layers. An alignment stage of the UV-curable nanoimprint process requires nano-level resolution as well as high stiffness to overcome friction force due to contact moving. In this paper, the alignment stage consists of a compliant mechanism using flexure hinges, piezo actuators for high force generation, and capacitive sensors for high-resolution measurement. The compliant mechanism is implemented by four prismatic-prismatic compliant chains for two degree-of-freedom translations. The compliant mechanism is composed of flexure hinges with high stiffness, and it is directly actuated by the piezo actuators which increases the stiffness of the mechanism, also. The performance of the ultra-precision stage is demonstrated by experiments.

• Proceedings of the KSME Conference
• /
• 2008.11a
• /
• pp.1939-1943
• /
• 2008

Deformation of a mold is measured and analyzed in alignment and curing processes of UV-Imprint Lithography. We are focused on mold deformation caused by a UV resin, which is laminated between a mold and a target glass-panel. The UV resin is viscous in case of liquid state, and the resin will be solidified when being exposed by the ultra-violet light. The viscosity of the resin causes shear force on the mold during the alignment process. Moreover, the shrinkage during phase change from liquid to solid may cause residual stress on the mold. The experiments for measuring temperature and strain are made during alignment and curing process. Strain-gages and thermocouples are used for measuring the strain and variation of temperature on several points of the mold, respectively. The deformation of mold is also simulated and analyzed. The simulation results are compared with the experiments. Finally, sources of alignment errors in large area UV-nanoimprint lithography are discussed.

• Korean Journal of Materials Research
• /
• v.26 no.11
• /
• pp.635-643
• /
• 2016

Graphene has shown exceptional properties for high performance devices due to its high carrier mobility. Of particular interest is the potential use of graphene nanoribbons as field-effect transistors. Herein, we introduce a facile approach to the fabrication of graphene nanoribbon (GNR) arrays with ~200 nm width using nanoimprint lithography (NIL), which is a simple and robust method for patterning with high fidelity over a large area. To realize a 2D material-based device, we integrated the graphene nanoribbon arrays in field effect transistors (GNR-FETs) using conventional lithography and metallization on highly-doped $Si/SiO_2$ substrate. Consequently, we observed an enhancement of the performance of the GNR-transistors compared to that of the micro-ribbon graphene transistors. Besides this, using a transfer printing process on a flexible polymeric substrate, we demonstrated graphene-silicon junction structures that use CVD grown graphene as flexible electrodes for Si based transistors.

• Journal of the Korean Vacuum Society
• /
• v.19 no.2
• /
• pp.96-104
• /
• 2010

We suggest here a cost-effective replica fabrication method for transparent and hard molds for imprinting lithography such as NIL and S-FIL. The process starts with the use of a replica hard mold from a master, using a polymer copy as a carrier. The polymer copy as a carrier was treated by soluble process for forming anti-adhesion layer. Duplicated hard molds can eliminate direct contact between a hard master and a patterned polymer on a substrate and the generated contamination of a master during the imprinting process. The replica hard mold exhibits the glass-like properties introduced here, such as transparency and hardness, make it appropriate for nanoimprint lithography and step-and-flash imprint lithography.

• Journal of the Semiconductor & Display Technology
• /
• v.11 no.4
• /
• pp.37-42
• /
• 2012

Nanoimprint lithography (NIL) has attracted broad interest as a low cost method to define nanometer scale patterns in recent years. A major disadvantage of thermal NIL is the thermal cycle, that is, heating over glass transition temperature and then cooling below it, which requires a significant amount of processing time and limits the throughput. One of the methods to overcome this disadvantage is to improve the cooling performance in NIL process. In this paper, the performance of the cooling system of thermal NIL is numerically investigated by SolidWorks Flow Simulation program. The calculated temperatures of nanoimprint device were verified by the measurements. By using the analysis model, the effects of the change of flow velocity and cooler location on the cooling performance are investigated. For the 6 cases (0.1 m/s, 0.5 m/s, 1 m/s, 3 m/s, 5 m/s, 10 m/s) of flow velocity and for the 6 cases of distances (50 mm, 40 mm, 30 mm, 20 mm, 10 mm, 1 mm) of cooler location, the heat conjugated flow analyses are performed and discussed.