• Steel and Composite Structures
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• v.33 no.5
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• pp.653-661
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• 2019

In this paper aeroelastic behavior of 3-phase nano-composite beam-plate with double delaminations is investigated. It is tried to study the effect of carbon nano-tubes (CNTs) on critical flutter pressure of reinforced damaged nano-composite structures. In this case, the CNTs are appending to the polymer matrix uniformly. The Eshelby-Mori-Tanaka model is used to obtain the effective material properties of 3-phase nano-composite beam-plate. To investigate the aeroelastic behavior of delaminated beam-plate subjected to supersonic flow, it is assumed that the damaged segments are forced to vibrate together. The boundary conditions and auxiliary conditions at edges of delaminated segments are used to predict critical flutter pressure. The influence of CNTs and different delamination parameters such as delamination length, axial position and its position through thickness are investigated on critical flutter pressure.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.05a
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• pp.765-767
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• 2010

In this paper, the variations of threshold voltage characteristics for ratio of channel length and thickness have been alanyzed for DG(Double Gate)MOSFET having top gate and bottom gate. Since the DGMOSFET has two gates, it has advantages that contollability of gate for current is nearly twice and SCE(Short Channel Effects) shrinks in nano devices. The channel length and thickness in MOSFET determines device size and extensively influences on SCEs. The threshold voltage roll-off, one of the SCEs, is large with decreasing channel length. The threshold voltage roll-off has been analyzed with various ratio of channel length and thickness for DGMOSFET in this study.

• Korean Journal of Materials Research
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• v.31 no.7
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• pp.403-408
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• 2021

Various surface colors are predicted and implemented using the interference color generated by controlling the thickness of nano-level diamond like carbon (DLC) thin film. Samples having thicknesses of up to 385 nm and various interference colors are prepared using a single crystal silicon (100) substrate with changing processing times at low temperature by plasma-enhanced chemical vapor deposition. The thickness, surface roughness, color, phases, and anti-scratch performance under each condition are analyzed using a scanning electron microscope, colorimeter, micro-Raman device, and scratch tester. Coating with the same uniformity as the surface roughness of the substrate is possible over the entire experimental thickness range, and more than five different colors are implemented at this time. The color matched with the color predicted by the model, assuming only the reflection mode of the thin film. All the DLC thin films show constant D/G peak fraction without significant change, and have anti-scratch values of about 19 N. The results indicate the possibility that nano-level DLC thin films with various interference colors can be applied to exterior materials of actual mobile devices.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.12 no.1
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• pp.104-109
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• 2013

In order to apply nano imprint technology in large area process, roller pressing is promising because of its low cost and high productivity. When pressing mold by roller, liquid resin is locally squeezed between mold and substrate. In this study, the main focus is to understand which process parameter affects residual layer. To do this, a simple analytical model was introduced. Especially, we consider the aspect ratio of patterns as essential cause of variation of the thickness in the equation. As a result, when the aspect ratio of pattern in the mold increases, the thickness of residual layer also increases. In conclusion, we show that the uniformity of residual layer could be accomplished by the control of velocity and pressing force in roller pressing imprint process.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.05a
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• pp.277-280
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• 2008

Recently, a demand of nano/micro patterned polymer for display or biochip has been rising. Then many studies have been carried out. Nano/micro-embossing is a deformation process where the workpiece materials is heated to permit easier material flow and then forced over a planar patterned tool. In this work, the hot-emboss process is performed with different forming conditions; forming temperature, load, press hold time, to get the proper condition for linear pattern fabrication on plated-type polymers (PC). Replicated pattern depth increases in proportion to the forming temperature, load and time. Reduction of the workpiece thickness increases according to press hold time. In process of time, reduction ratio of workpiece thickness decreases because of surface area increment of the workpiece and pressure decline on it.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.4
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• pp.244-248
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• 2015

We proposed and demonstrated the double layered metallic nano-hole structure using polystyrene beads process to enhance the sensitivity of surface plasmon resonance (SPR). The double layered SPR structures are calculated using the finite-difference time-domain (FDTD) method for the width, thickness, and period of the metallic nano-hole structures. The thickness of the metal film and the metallic nano-hole is 30 and 20 nm in the 214 nm wide nano-hole size, respectively. The double layered SPR structures are fabricated with monolayer polystyrene beads of 420 nm wide. The sensitivities of the conventional SPR sensor and the double layered SPR sensor are obtained to 42.2 and 52.1 degree/RIU, respectively.

• Journal of the Semiconductor & Display Technology
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• v.18 no.3
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• pp.19-24
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• 2019

In this study, the Ag nano-dots structure was applied to the textured wafer surface to improve the light trapping effect of crystalline silicon solar cell. The Ag nano-dots structure was formed by the annealing of Ag thin film. Ag thin film deposition was performed using a thermal evaporator. The effect of light trapping was compared and analyzed through light reflectance measurements. The optimization process of the Ag nano-dots structure was made by varying the thickness of Ag thin film, the annealing temperature and time. The thickness of Ag thin films was in the range of 5 ~ 20 nm. The annealing temperature was in the range of 450~650℃ and the annealing time was in the range of 30 ~ 60 minutes. As a result, the light reflectance of 10 nm Ag thin film annealed at 650℃ for 30 minutes showed the lowest value of about 9.67%. This is a value that is about 3.37% lower than the light reflectance of the sample that has undergone only the texturing process. Finally, the change of the light reflectance by the HF treatment of the sample on which the Ag nano-dots structure was formed was investigated. The HF treatment time was in the range of 0 ~ 120 seconds. As a result, the light reflectance decreased by about 0.41% due to the HF treatment for 75 seconds.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.63-63
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• 2003

The nanotopography of silicon wafers has emerged as an important factor in the STI process since it affects the post-CMP thickness deviation (OTD) of dielectric films. Ceria slurry with surfactant is widely applied to STI-CMP as it offers high oxide-to-nitride removal selectivity. Aiming to control the nanotopography impact through ceria slurry characteristics, we examhed the effect of surfactant concentration and abrasive size on the nanotopography impact. The ceria slurries for this study were produced with cerium carbonate as the starting material. Four kinds of slurry with different size of abrasives were prepared through a mechanical treatment The averaged abrasive size for each slurry varied from 70 nm to 290 nm. An anionic organic surfactant was added with the concentration from 0 to 0.8 wt %. We prepared commercial 8 inch silicon wafers. Oxide Shu were deposited using the plasma-enhanced tetra-ethyl-ortho-silicate (PETEOS) method, The films on wafers were polished on a Strasbaugh 6EC. Film thickness before and after CMP was measured with a spectroscopic ellipsometer, ES4G (SOPRA). The nanotopogrphy height of the wafer was measured with an optical interferometer, NanoMapper (ADE Phase Shift)

• Journal of Welding and Joining
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• v.28 no.2
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• pp.47-53
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• 2010

According to the research report for the recent a few years, the dissimilar welding of Cu and STS 304 alloy have been presented that a weldability is very poor. This article present a study on Lap joint by Electron beam welding dissimilar materials. The weld metals was constituted between pure copper and STS 304 steel. The experiment was performed with 125mA welding current, 520mA focusing current. The Vacuum condition of chamber is 5${\times}$10-5torr and welding speed is 300mm/min. Showing the bead shape of weld metal, the thickness of the stainless 304 using as the protect materials is 3mm and the thickness of a copper is 15mm. The analysis about the microstructure were carried out in which it was observed with SEM. The results showed that complex heterogeneous fusion zone microstructure characterized both by rapid cooling and mixing of the molten metal, however the liquation crack was formated in the fusion line.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.338-338
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• 2007

Photo-conductive properties of CdS films deposited on glass substrates by a reactive sputtering in Ar atmosphere were characterized as a function of working pressure and the film thickness. The XRD measurements of CdS films revealed obvious (002) preferred orientation. In 300nm-thick of films, difference between dark and photo-resistance increases with increasing working pressure within the films. The films at 5 mTorr of working pressure show a dark resistance of approximately $1\;{\times}\;10^6\;{\Omega}/{\square}$ and a photo-resistance of $3\;{\times}\;10^4\;{\Omega}/{\square}$. The decrease dark- and photo-resistance of films as thickness decrease were $1.4\;{\times}\;10^6$ and $3\;{\times}\;10^4\;{\Omega}/{\square}$, respectively. CdS films deposited on glass substrates are considered tobe suitable for photo-conductivity materials in stealth radome applications.