• 한국세라믹학회지
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• 제43권2호
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• pp.79-84
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• 2006

We studied the microstructure and magnetic property of the pulsed DC magnetron sputtered $Zn_{\0.8}Co_{0.2}O$ film as a function of substrate temperatures. The X-ray patterns of the $Zn_{\0.8}Co_{0.2}O$ film showed a strong (002) preferential orientation at $500^{\circ}C$. The films with a crystallite size of 23-35 nm were grown in the form of nano-sized structure and this tendency was remarkable with increasing substrate temperature. The UV-visible result showed that the $Zn_{\0.8}Co_{0.2}O$ film prepared above $300^{\circ}C$ has a high optical transmittance of over $80\%$ in the visible region. The absorption bands were observed due to sp-d interchange action by $Co^{2+}$ complex ion and dd transition in the region from 500 to 700nm. The resistivity of the film was below $10^{-1}\;\Omega-cm\;above\;300^{\circ}C$. The AGM analysis results for the all films showed the magnetic hysteresis curves of ferromagnetic nature. The low electrical resistivity and room temperature ferromagnetism of ZnCoO thin films 'deposited above $300^{\circ}C$ suggested the possibility for the application to Diluted Magnetic Semiconductors (DMSs).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.71-71
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• 2012

As the critical dimensions of integrated circuits are scaled down, the line width and spacing between the metal interconnects are made smaller. The dielectric film used as insulation between the metal lines contributes to the resistance-capacitance (RC) time constant that governs the device speed. If the RC time delay, cross talk and lowering the power dissipation are to be reduced, the intermetal dielectric (IMD) films should have a low dielectric constant. The introduction of Cu and low-k dielectrics has incrementally improved the situation as compared to the conventional $Al/SiO_2$ technology by reducing both the resistivity and the capacitance between interconnects. Some of the potential candidate materials to be used as an ILD are organic and inorganic precursors such as hydrogensilsequioxane (HSQ), silsesquioxane (SSQ), methylsilsisequioxane (MSQ) and carbon doped silicon oxide (SiOCH), It has been shown that organic functional groups can dramatically decrease dielectric constant by increasing the free volume of films. Recently, various inorganic precursors have been used to prepare the SiOCH films. The k value of the material depends on the number of $CH_3$ groups built into the structure since they lower both polarity and density of the material by steric hindrance, which the replacement of Si-O bonds with Si-$CH_3$ (methyl group) bonds causes bulk porosity due to the formation of nano-sized voids within the silicon oxide matrix. In this talk, we will be introduce some properties of SiOC(-H) thin films deposited with the dimethyldimethoxysilane (DMDMS: $C_4H_{12}O_2Si$) and oxygen as precursors by using plasma-enhanced chemical vapor deposition with and without ultraviolet (UV) irradiation.

• 설비공학논문집
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• 제25권12호
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• pp.674-678
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• 2013

We present a non-invasive technique to the measure temperature distribution in nano-sized porous thin films by means of the two-color laser-induced fluorescence (2-LIF) of rhodamine B. The fluorescence induced by the green line of a mercury lamp with the makeup of optical filters was measured on two separate color bands. They can be selected for their strong difference in the temperature sensitivity of the fluorescence quantum yield. This technique allows for absolute temperature measurements by determining the relative intensities on two adequate spectral bands of the same dye. To measure temperature fields, Silica (SiO2) nanoporous structure with 1-um thickness was constructed on a cover glass, and fluorescent dye was absorbed into these porous thin films. The calibration curves of the fluorescence intensity versus temperature were measured in a temperature range of $10-60^{\circ}C$, and visualization and measurement of the temperature field were performed by taking the intensity distributions from the specimen for the temperature field.

• 한국정밀공학회지
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• 제31권10호
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• pp.881-887
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• 2014

Peltier 효과를 이용한 박막형 열전 냉각 모듈은 열전 재료에 의한 열 출입의 방향에 따라서 수직형 구조와 수평구조로 나누어진다. 이와 같은 박막형 열전 냉각 모듈의 성능은 기존의 벌크 형태의 냉각 모듈을 평가하기 위해 사용하는 모델을 이용하여 측정할 수 있다. 우리가 제조한 열전 박막을 모델에 적용하여 열전재료의 길이 변화에 따른 열 방출 성능을 평가 하여 보았다. 재료의 성능이 향상됨에 따라서 동일한 열 전기적 저항에서 최대 열 방출 성능은 $73.9W/cm^2$에서 $131.2W/cm^2$으로 크게 증가하는 것을 알 수 있었다. 또한 방사 형태로 $10{\mu}m$ 두께의 열전 재료와 전극들이 두께가 각기 다른 기판 위에 형성된 수평형 냉각 모듈을 설계하여 $10{\mu}m$ 두께의 $SiO_2$ 멤브레인 위에 열전재료가 형성된 열전 모듈에서 22 K의 온도 차를 해석결과로부터 알 수 있었다. 이와 같은 결과로부터 열전 재료의 특성과 모듈의 열 전기적 저항은 필연적으로 짧은 열전 재료의 길이와 두께를 갖는 박막형 열전 모듈을 높은 효율의 모듈로 설계하기 위해 반드시 고려되어 되어야 할 요소임을 확인 할 수 있다.

• 대한금속재료학회지
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• 제48권5호
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• pp.401-409
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• 2010

This study was performed to develop an antibacterial film that can be dried at room temperature. A nanosized TiO$_2$ particle-dispersed solution was prepared by the hydrothermal treatment of peroxo-titanic acid at 160${^{\circ}C}$ for 4h. The binder was synthesized through the hydrolysis and condensation reactions of TEOS (10cc) and GPTS (3.5cc) in the mixture of H$_2$O (30cc) and EtOH (30cc). The synthesized binder was mixed with 0.1 M of TiO$_2$ solution in a volume ratio of binder/TiO$_2$ solution=0.25~0.5. The glass substrate was coated after using the dip coating method, which was then followed by drying for over 2h at room temperature. Although the TiO$_2$ particles did not chemically-bond to the binder, the coating layer strongly adhered to the substrate and displayed good antibacterial properties.

• 한국초전도ㆍ저온공학회논문지
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• 제10권1호
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• pp.1-5
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• 2008

The effect of $BaCeO_3$ doping on the critical current density of YBCO film by TFA-MOD method was studied. $BaCeO_3$ doping was made by two method; one is direct addition of $BaCeO_3$ nano-sized powder prepared by citrate process followed by grinding with planetary ball mill for 10 hours. Another is addition of Ba-Ce precursor solution prepared with Ba-acetate and Ce acetate dissolved in TFA to the YBCO-TFA precursor solution. The film was made by standard dip coating and heat treatment process with conversion temperature of $790^{\circ}C$ in 1000 ppm oxygen containing moisturized Ar gas atmosphere. The direct addition of $BaCeO_3$ powder resulted in YBCO film with good epitaxial growth and no evidence of second phase formation. The addition through precursor solution resulted in the increase of critical current density upto 30 at% doping and uniform dispersion of $BaCeO_3$ fine inclusion was confirmed by SEM-EDX.

• 마이크로전자및패키징학회지
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• 제13권3호
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• pp.13-17
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• 2006

밀도가 높고 주기적인 배열의 기공과 나노패턴이 된 텅스텐 나노점이 실리콘 산화물/실리콘 기판위에 형성이 되었다. 기공의 지름은 25 nm이고 깊이는 40 nm 이었으며 기공과 기공 사이의 거리는 60 nm이었다. nm 크기의 패턴을 형성시키기 위해서 자기조립물질을 사용했으며 폴리스티렌(PS) 바탕에 벌집형태로 평행하게 배열된 실린더 모양의 폴리메틸메타아크릴레이트(PMMA)의 구조를 형성했다. 폴리메틸메타아크릴레이트를 아세트산으로 제거하여 폴리스티렌만 남아있는 건식 식각용 마스크를 만들었다. 실리콘 산화막은 불소 기반의 화학반응성 식각법을 이용하여 식각했다. nm크기의 트렌치 안에 선택적으로 증착된 텅스텐 나노점을 만들기 위해서 저압화학기상증착(LPCVD)방법을 이용하였다. 텅스텐 나노점과 실리콘 트렌치의 지름은 26 nm 와 30 nm였다.

• 한국전기전자재료학회논문지
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• 제35권4호
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• pp.348-352
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• 2022

Resistive switching behaviors of a co-sputtered zinc silicate thin film (ZnO and SiO₂ targets) have been investigated. We fabricated an Ag/ZnSiO_x/highly doped n-type Si substrate device by using an RF magnetron sputter system. X-ray diffraction pattern (XRD) indicated that the Zn₂SiO₄ was formed by a post annealing process. A unique morphology was observed by scanning electron microscope (SEM) and atomic force microscope (AFM). As a result of annealing process, 50 nm sized nano clusters were formed spontaneously in 200~300 nm sized grains. The device showed a unipolar resistive switching process. The average value of the ratio of the resistance change between the high resistance state (HRS) and the low resistance state (LRS) was about 106 when the readout voltage (0.5 V) was achieved. Resistance ratio is not degraded during 50 switching cycles. The conduction mechanisms were explained by using Ohmic conduction for the LRS and Schottky emission for the HRS.

• 마이크로전자및패키징학회지
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• 제16권4호
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• pp.29-32
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• 2009

기공의 밀도가 높은 다공성 실리콘 산화물 박막이 GaAs 기판 상에 형성이 되었다. 다공성 실리콘 산화막을 형성하기 위해서 자기조립 형태로 배열하는 블록공중합체를 사용하였다. GaAs 기판 상에 화학기상증착 (CVD)을 이용하여 실리콘 산화막을 형성하였다. 폴리스티렌 (PS) 바탕에 벌집 형태로 배열된 폴리메틸메타아크릴레이트 (PMMA)가 주기적으로 배열되어 있는 나노패턴 박막을 형성하였고 PMMA를 아세트 산으로 제거하여 PS만 남아있는 나노크기의 마스크를 형성하였다. 형성된 PS 나노패턴의 지름은 15 nm, 박막의 두께는 40 nm 였으며 이를 건식 식각용 마스크로 사용하여 화학반응성식각 (RIE) 을 진행하였고 PS의 나노패턴이 산화막 기판상에 전사되도록 하였다. 식각 시간을 조절하여 산화막에 형성된 기공이 GaAs 표면까지 연결되도록 하였고 이는 불산으로 산화막을 제거하여 확인하였다. 식각시간은 90초에서 110초였으며 산화막 상에 나노패터닝된 기공이 형성되는 식각 시간은 90초에서 100초 사이였다. 형성된 나노 패터닝된 산화막 기공의 지름은 20~22 nm였고 식각 시간에 따라서 조절이 가능함을 확인할 수 있었다.

• Progress in Superconductivity
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• 제7권1호
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• pp.87-91
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• 2005

[ $YBa_{2}Cu_{3}O_{7-x}$ ] thin films were fabricated on $LaAlO_3$(100) substrate by TFA-MOD process. Yttrium-excess (0, 2.5, 5, 10, 15, 20 $at\%$) coating solution was prepared by adding extra amount of yttrium into a stoichiometric(Y:Ba:Cu=1:2:3) TFA precursor solution. Results are presented concerning the influence of excess yttrium additions on the microstructure development and superconducting properties of $YBa_{2}Cu_{3}O_{7-x}$ film. Large sized CuO particles was observed by SEM EDS investigation. The addition of excess yttrium affected little on $T_c$ of $YBa_{2}Cu_{3}O_{7-x}$ film. $J_c$ of YBCO film was enhanced with excess yttrium addition. Jc maximum of $2.21\;MA/cm^2$ (77 K, self field) appeared with the $15\;at\%$ addition of excess yttrium. With further yttrium addition up to $20\;at\%$, Jc decreased down to $0.9\;MA/cm^2$.