• Proceedings of the KWS Conference
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• 2005.06a
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• pp.367-369
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• 2005

For the purpose of the optimization or the break through of production processes, it is essential to understand or theoretically interpret dominant mechanisms of the processes, and further more, archive them. and utilize them combining some of them which are needed. Especially in the technology for micro- or nano-scaled objects, adhesion phenomenon is no more negligible, because the adhesion force is proportional to the size of objects meanwhile gravity force is proportional to the third power of it. Author has been working about the mechanisms for micro-assembly processes, which include joining processes and manipulation processes. In the present paper, the strategy and the progress to establish the micro-assembly technology archive are introduced. Some of the mechanisms are introduced with related basic approaches to the adhesion phenomena. Also it will be expressed that our data base project for the surface and interfacial energies is strongly related to these basic approaches.

• Geomechanics and Engineering
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• v.17 no.2
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• pp.175-180
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• 2019

This research is concerned with post-buckling investigation of nano-scaled beams constructed from porous functionally graded (FG) materials taking into account geometrical imperfection shape. Hence, two types of nanobeams which are perfect and imperfect have been studied. Porous FG materials are classified based on even or uneven porosity distributions. A higher order nonlinear refined beam theory is used in the present research. Both perfect and imperfect nanobeams are formulated based on this refined theory. A detailed study is provided to understand the effects of geometric imperfection, pore distribution, material distribution and small scale effects on buckling of FG nanobeams.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.52-52
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• 2009

To date, chalcogenide alloy such as $Ge_2Sb_2Te_5$(GST) have not only been rigorously studied for use in Phase Change Random Access Memory(PRAM) applications, but also temperature gap to make different states is not enough to apply to device between amorphous and crystalline state. In this study, we have investigated a new system of phase change media based on the In-Sb-Te(IST) ternary alloys for PRAM. IST chalcogenide thin films were prepared in trench structure (aspect ratio 5:1 of length=500nm, width=100nm) using Tri methyl Indium $(In(CH_3)_4$), $Sb(iPr)_3$ $(Sb(C_3H_7)_3)$ and $Te(iPr)_2(Te(C_3H_7)_2)$ precursors. MOCVD process is very powerful system to deposit in ultra integrated device like 100nm scaled trench structure. And IST materials for PRAM can be grown at low deposition temperature below $200^{\circ}C$ in comparison with GST materials. Although Melting temperature of 1ST materials was $\sim 630^{\circ}C$ like GST, Crystalline temperature of them was ~$290^{\circ}C$; one of GST were $130^{\circ}C$. In-Sb-Te materials will be good candidate materials for PRAM applications. And MOCVD system is powerful for applying ultra scale integration cell.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.275-275
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• 2013

Osteoblast is one of cells related with osseointegration and many research have conducted the adhesion of osteoblast onto the surface of implant. In the osseointegration, biocompatibility of the implant and cell adhesion to the surface are important factors. The researches related to cell adhesion have a direction from micro-scaled surface roughness to nano-scaled surface roughness with advancing nanotechnology. A cell reacts and sense to stimuli from extracellular matrix (ECM) and topography of the ECM [1]. Thus, for better osseointegration, we should provide an environment similar to ECM. In this study, we synthesize TiO2 nanowires using hydrothermal reaction because TiO2 provides inertness to titanium on its surface and enables it used as an implant material for the orthopedic treatment such as fixation of the bone fracture [2]. Ti substrate is immersed into NaOH aqueous solution. The solution are heated at $140{\sim}200^{\circ}C$ for various time (10~720 minutes). After heat treatment, we take out the sample and immerse it into HCl aqueous solution for 1 hour. The acid treated sample is heated again at $500^{\circ}C$ for 3 hours [3]. Then, we culture osteoblast on the TiO2 nanowires. For investigating cell adhesion onto nanostructured surface, we conduct several tests such as MTT assay, ALP (Alkaline phosphatase) activity assay, measuring calcium expression, and so on. These preliminary results of the cell culture on the nanowires are foundation for investigating cell-material interaction especially with nanostructure interaction.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.71-71
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• 2012

As the critical dimensions of integrated circuits are scaled down, the line width and spacing between the metal interconnects are made smaller. The dielectric film used as insulation between the metal lines contributes to the resistance-capacitance (RC) time constant that governs the device speed. If the RC time delay, cross talk and lowering the power dissipation are to be reduced, the intermetal dielectric (IMD) films should have a low dielectric constant. The introduction of Cu and low-k dielectrics has incrementally improved the situation as compared to the conventional $Al/SiO_2$ technology by reducing both the resistivity and the capacitance between interconnects. Some of the potential candidate materials to be used as an ILD are organic and inorganic precursors such as hydrogensilsequioxane (HSQ), silsesquioxane (SSQ), methylsilsisequioxane (MSQ) and carbon doped silicon oxide (SiOCH), It has been shown that organic functional groups can dramatically decrease dielectric constant by increasing the free volume of films. Recently, various inorganic precursors have been used to prepare the SiOCH films. The k value of the material depends on the number of $CH_3$ groups built into the structure since they lower both polarity and density of the material by steric hindrance, which the replacement of Si-O bonds with Si-$CH_3$ (methyl group) bonds causes bulk porosity due to the formation of nano-sized voids within the silicon oxide matrix. In this talk, we will be introduce some properties of SiOC(-H) thin films deposited with the dimethyldimethoxysilane (DMDMS: $C_4H_{12}O_2Si$) and oxygen as precursors by using plasma-enhanced chemical vapor deposition with and without ultraviolet (UV) irradiation.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.47-47
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• 2011

There have been numerous efforts to enhance the efficiency of light-emitting diodes (LEDs) by using low dimensional structures such as quantum dots (QDs), wire (QWRs), and wells (QWs). We demonstrate QD/QWR/QW hybrid structured LEDs by using nano-scaled pyramid structures of GaN with ~260 nm height. Photoluminescence (PL) showed three multi-peak spectra centered at around 535 nm, 600 nm, 665 nm for QWs, QWRs, and QDs, respectively. The QD emission survived at room temperature due to carrier localization, whereas the QW emission diminished from 10 K to 300 K. We confirmed that hybrid LEDs had zero-, one-, and two-dimensional behavior from a temperature-dependent time-resolved PL study. The radiative lifetime of the QDs was nearly constant over the temperature, while that of the QWs increased with increasing temperature, due to low dimensional behavior. Cathodoluminescence revealed spatial distributions of InGaN QDs, QWRs, and QWs on the vertices, edges, and sidewalls, respectively. We investigated the blue-shifted electroluminescence with increasing current due to the band-filling effect. The hybrid LEDs provided broad-band spectra with high internal quantum efficiency, and color-tunability for visible light-emitting sources.

• Structural Engineering and Mechanics
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• v.44 no.4
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• pp.431-448
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• 2012

In this paper, the first-order shear deformation theory (FSDT) (Mindlin) for continuum incorporating surface energy is exploited to study the static behavior of ultra-thin functionally graded (FG) plates. The size-dependent mechanical response is very important while the plate thickness reduces to micro/nano scales. Bulk stresses on the surfaces are required to satisfy the surface balance conditions involving surface stresses. Unlike the classical continuum plate models, the bulk transverse normal stress is preserved here. By incorporating the surface energies into the principle of minimum potential energy, a series of continuum governing differential equations which include intrinsic length scales are derived. The modifications over the classical continuum stiffness are also obtained. To illustrate the application of the theory, simply supported micro/nano scaled rectangular films subjected to a transverse mechanical load are investigated. Numerical examples are presented to present the effects of surface energies on the behavior of functionally graded (FG) film, whose effective elastic moduli of its bulk material are represented by the simple power law. The proposed model is then used for a comparison between the continuum analysis of FG ultra-thin plates with and without incorporating surface effects. Also, the transverse shear strain effect is studied by a comparison between the FG plate behavior based on Kirchhoff and Mindlin assumptions. In our analysis the residual surface tension under unstrained conditions and the surface Lame constants are expected to be the same for the upper and lower surfaces of the FG plate. The proposed model is verified by previous work.

• Nuclear Engineering and Technology
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• v.51 no.1
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• pp.190-197
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• 2019

W-K-TiC alloys with different titanium carbide concentrations (0.05, 0.1, 0.25, 0.5, 1, 2) wt.% were fabricated through Mechanical Alloying and Spark Plasma Sintering. The effects of the addition of nano-scaled TiC particles on the relative density, Vickers micro-hardness, microstructure, crystal information, thermal shock resistance, and tensile strength were investigated. It is revealed that the doped TiC nano-particles located at the grain boundaries. The relative density and Vickers micro-hardness of W-K-TiC alloys was enhanced with TiC addition and the highest Vickers micro-hardness is 731.55. As the TiC addition increased from 0.05 to 2 wt%, the room-temperature tensile strength raised from 141 to 353 MPa. The grain size of the W-K-TiC alloys decreased sharply from $2.56{\mu}m$ to 330 nm with the enhanced TiC doping. The resistance to thermal shock damage of W-K-TiC alloys was improved slightly with the increased TiC addition.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.423.1-423.1
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• 2016

Polyvinylidene fluoride (PVDF) has drawn much attention due to its many advantages. PVDF shows high mechanical strength and flexibility, thermal stability, and good piezoelectricity enabling its application to various fields such as sensors, actuators, and energy transducers. Further studies have been conducted on PVDF in the form of thin films. The thin films exhibit different ionic conductivity according to the number of pores within the film, letting these films to be applied as electrolytes or separators of batteries. Porous PVDF membranes are also easily processed, usually made by using electrospinning. However, a large portion of researches were conducted using PVDF membranes produced by far field electrospinning, which is not a well-controlled experimental method. In this paper, we use near field electrospinning (NFES) process for more controlled, small-scaled, mesh type PVDF structures of nano to micro fibers fabricated by controlling process parameters and investigate the properties of such membranous structures. These membranes vary according to geometrical shape, pore density, and fiber thickness. We then measured the mechanical strength and piezoelectric characteristic of the structures. With various geometries in the fiber structures and various scales in the fibers, these types of structures can potentially lead to broader applications for stretchable electronics and dielectric electro active polymers.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.4
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• pp.719-724
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• 2003

In this paper, we have presented the simulation results about threshold voltage of nano scale lightly doped drain (LDD) MOSFET with halo doping profile. Device size is scaled down from 100nm to 40nm using generalized scaling. We have investigated the threshold voltage for constant field scaling and constant voltage scaling using the Van Dort Quantum Correction Model (QM) and direct tunneling current for each gate oxide thickness. We know that threshold voltage is decreasing in the constant field scaling and increasing in the constant voltage scaling when gate length is reducing, and direct tunneling current is increasing when gate oxide thickness is reducing. To minimize the roll off characteristics for threshold voltage of MOSFET with decreasing channel length, we know $\alpha$ value must be nearly 1 in the generalized scaling.