• Journal of the Korean Chemical Society
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• v.60 no.5
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• pp.317-320
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• 2016

Efficient copper removal from water was achieved by using surface modified silica spheres with 3-mercaptopropyltrimethoxysilane (MPTMS) using base catalyst. The surface modification of silica spheres was performed by hydrolysis and condensation reactions of the MPTMS. The characteristic infrared absorption peaks at 2929, 1454, and 1343 cm⁻¹ represent the −CH₂ stretching vibration, asymmetric deformation, and deformation, respectively. The absorption peaks at 2580 and 693 cm⁻¹ corresponding the −SH stretching vibration and the C-S stretching vibration indicate the incorporation of MPTMS to the surface of silica spheres. Field emission scanning electron microscope (FESEM) image of the surface modified silica sphere (SMSS) shows nano-particles of MPTMS on the surface of silica spheres. High concentration of copper solution (1000 ppm) was used to test the copper removal efficiency and uptake capacity. The FESEM image of SMSS treated with the copper solution shows large number of copper lumps on the surface of SMSS. The copper concentration drastically decreased with increasing the amount of SMSS. The residual copper concentrations were analyzed using inductively coupled plasma mass spectrometer. The copper removal efficiency and uptake capacity with 1000 ppm of copper solution were 99.99 % and 125 mg/g, respectively.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.180-182
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• 2002

Copper thin films are prepared by a chemical vapor deposition technology for multi-level metallzations in ULSI fabrication. The copper films were deposited on TiN/Si substrates in helium atmosphere with the substrate temperature between $120^{\circ}C$ and $300^{\circ}C$. In order to get more reliable metallizations, effects on the post-annealing treatment to the electrical properties of the copper films have been investigated. The Cu films were annealed at the $5\times$10^{-6}$ Torr vacuum condition, and the electrical resistivity and the nano-structures were measured for the Cu films. The electrical resistivity of Cu films shown to be reduced by the post-annealing. The electrical resistivity of 2.2 $\mu$$\Omega$.cm was obtained for the sample deposited at the substrate temperature of $180^{\circ}C$ after vacuum annealed at $300^{\circ}C$. The resistivity variations of the films was not exactly matched with the size of the nato-structures of the copper grains, but more depended on the deposition temperature of the copper films.

• Journal of Animal Science and Technology
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• v.63 no.2
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• pp.295-304
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• 2021

This study was aimed to investigate the Cu bioavailability, growth response, digestibility of nutrients, and blood metabolites of broiler chicks fed CuSO4 in nano or common forms. A total of 720 broiler chickens were distributed between eight treatments according to a completely randomized design. There were 8 treatments and 6 replicates in each treatment with 15 birds/replicate. The treatments were divided into common copper sulfate at the doses of 16 ppm, 40 ppm, 80 ppm, and 120 ppm (INO) and hot-melt extruded copper sulfate at the doses of 16 ppm, 40 ppm, 80 ppm, and 120 ppm (HME-Cu). The experiment was operated for 35 days in 2 phases (phase 1, d 0 to 14; and phase 2, d 15 to 35). No significant differences were shown in growth performance, feed intake, FCR, and nutrient digestibility among the treatments. The concentration of Cu in the serum was increased in the HME-Cu broilers compared with the INO broilers at phase 2. A linear increase was observed in the concentration of Cu in the liver in broilers fed INO diets, however, no significant differences were observed by the supplementation of HME-Cu levels. The linear increase was detected in the content of Cu in excreta in the INO and HME-Cu treatments by increasing the dietary Cu content. The HME-Cu treatments showed a lower Cu concentration in the excreta compared with the INO treatments. The higher bioavailability of Cu in HME form can decrease the recommended dose of Cu in broiler diets.

• Journal of Welding and Joining
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• v.28 no.2
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• pp.47-53
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• 2010

According to the research report for the recent a few years, the dissimilar welding of Cu and STS 304 alloy have been presented that a weldability is very poor. This article present a study on Lap joint by Electron beam welding dissimilar materials. The weld metals was constituted between pure copper and STS 304 steel. The experiment was performed with 125mA welding current, 520mA focusing current. The Vacuum condition of chamber is 5${\times}$10-5torr and welding speed is 300mm/min. Showing the bead shape of weld metal, the thickness of the stainless 304 using as the protect materials is 3mm and the thickness of a copper is 15mm. The analysis about the microstructure were carried out in which it was observed with SEM. The results showed that complex heterogeneous fusion zone microstructure characterized both by rapid cooling and mixing of the molten metal, however the liquation crack was formated in the fusion line.

• Journal of the Korean Society of Industry Convergence
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• v.22 no.6
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• pp.767-773
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• 2019

The thermal diffusion performance of the electronic device is a factor for evaluating the stability of the electronic device. Therefore, many of research have been conducted to improve the thermal characteristics of thermal interface materials, which are materials for thermal diffusion of electronic products. In this study, nano thermal grease was prepared by blending graphene, silver and copper nano powders into a thermal grease, a type of thermal interface materials, and the heat transfer rate was measured and compared for the purpose of investigating the improved thermal properties. As a result, the thermal properties were good in the order of graphene, silver and copper, which is thought to be due to the different thermal properties of the nano powder itself.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.17-24
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• 2020

As an interconnect scaling faces a technical bottleneck, the device stacking technologies have been developed for miniaturization, low cost and high performance. To manufacture a stacked device structure, a vertical interconnect becomes a key process to enable signal and power integrities. Most bonding materials used in stacked structures are currently solder or Cu pillar with Sn cap, but copper is emerging as the most important bonding material due to fine-pitch patternability and high electrical performance. Copper bonding has advantages such as CMOS compatible process, high electrical and thermal conductivities, and excellent mechanical integrity, but it has major disadvantages of high bonding temperature, quick oxidation, and planarization requirement. There are many copper bonding processes such as dielectric bonding, copper direct bonding, copper-oxide hybrid bonding, copper-polymer hybrid bonding, etc.. As copper bonding evolves, copper-oxide hybrid bonding is considered as the most promising bonding process for vertically stacked device structure. This paper reviews current research trends of copper bonding focusing on the key process of Cu-SiO₂ hybrid bonding.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2003.04a
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• pp.26-26
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• 2003

• Korean Journal of Materials Research
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• v.21 no.1
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• pp.21-27
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• 2011

A nano-porous structure of tin oxide was prepared using an anodic oxidation process and the sample's electrochemical properties were evaluated for application as an anode in a rechargeable lithium battery. Microscopic images of the as-anodized sample indicated that it has a nano-porous structure with an average pore size of several tens of nanometers and a pore wall size of about 10 nanometers; the structural/compositional analyses proved that it is amorphous stannous oxide (SnO). The powder form of the as-anodized specimen was satisfactorily lithiated and delithiated as the anode in a lithium battery. Furthermore, it showed high initial reversible capacity and superior rate performance when compared to previous fabrication attempts. Its excellent electrode performance is probably due to the effective alleviation of strain arising from a cycling-induced large volume change and the short diffusion length of lithium through the nano-structured sample. To further enhance the rate performance, the attempt was made to create porous tin oxide film on copper substrate by anodizing the electrodeposited tin. Nevertheless, the full anodization of tin film on a copper substrate led to the mechanical disintegration of the anodic tin oxide, due most likely to the vigorous gas evolution and the surface oxidation of copper substrate. The adhesion of anodic tin oxide to the substrate, together with the initial reversibility and cycling stability, needs to be further improved for its application to high-power electrode materials in lithium batteries.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.45-45
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• 2007

Capacitors among the embedded passive components are most widely studied because they are the major components in terms of size and number and hard to embed compared with resistors and inductors due to the more complicated structure. To fabricate a capacitor-embedded PCB for in-line process, it is essential to adopt a low temperature process (<$200^{\circ}C$). However, high dielectric materials such as ferroelectrics show a low permittivity and a high dielectric loss when they are processed at low temperatures. To solve these contradicting problems, we studied BMN materials as a candidate for dielectric capacitors. processed at PCB-compatible temperatures. The morphologies of BMN thin films were investigated by AFM and SEM equipment. The electric properties (C-F, I-V) of Pt/BMN/Cu/polymer were evaluated using an impedance analysis (HP 4194A) and semiconductor parameter analyzer (HP4156A). $Bi_2Mg_{2/3}Nb_{4/3}O_7$(BMN) thin films deposited on copper clad laminate substrates by sputtering system as a function of Ar/$O_2$ flow rate at room temperature showed smooth surface morphologies having root mean square roughness of approximately 5.0 nm. 200-nm-thick films deposited at RT exhibit a dielectric constant of 40, a capacitance density of approximately $150\;nF/cm^2$, and breakdown voltage above 6 V. The crystallinity of the BMN thin films was studied by TEM and XRD. BMN thin film capacitors are expected to be promising candidates as embedded capacitors for printed circuit board (PCB).

• Transactions of Materials Processing
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• v.29 no.1
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• pp.49-54
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• 2020

The influence of electric current on the joining properties of aluminum and copper was investigated. Various pulsed electric current conditions were set to the joining specimens followed by pressure. The shear strength of the joint area between aluminum and copper was measured by the lab shear test. In addition, the microstructures of the joint area were observed through a field emission scanning electron microscope, energy dispersive X-ray, and electron backscatter diffraction. The mechanical properties of each phase in the joint region were measured by nano-indentation. As a result, it was confirmed that electrically assisted solid state joining of copper and aluminum could be applied in various industrial fields.