• Korean Journal of Materials Research
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• v.17 no.7
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• pp.390-395
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• 2007

We systematically investigated the effects of InAs coverage variation, two-step annealing and an asymmetric InGaAs quantum well (QW) on the structural and optical characteristics of InAs quantum dots (QDs) by using atomic force microscopy (AFM), transmission electron microscopy (TEM) and photoluminescence (PL) measurement. The transition of size distribution of InAs QDs from bimodal to multi-modal was noticeably observed with increasing InAs coverage. By means of two-step annealing, it is found that significant narrowing of the luminescence linewidth (from 132 to 31 meV) from the InAs QDs occurs together with about 150 meV blueshift, compared to as-grown InAs QDs. Finally, the InAs QDs emitting at longer wavelength of $1.3\;{\mu}m$ with narrow linewidth were grown by an asymmetric InGaAs QW. The excited-state transition for the InAs QDs with an asymmetric InGaAs QW was not noticeably observed due to the large energy-level spacing between the ground states and the first excited states. The InAs QDs with an asymmetric InGaAs QW will be promising for the device applications such as $1.3\;{\mu}m$ optical-fiber communication.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.12-17
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• 2019

In this study, the Ag nano-dots structure and silicon nitride film were applied to the textured wafer surface to improve the light trapping effect of mono-crystalline silicon solar cell. Ag nano-dots structure was formed by performing a heat treatment for 30 minutes at 650℃ after the deposition of 10nm Ag thin film. Ag thin film deposition was performed using a thermal evaporator. The silicon nitride film was deposited by a Hot-wire chemical vapor deposition. The effect of light trapping was compared and analyzed through light reflectance measurements. Experimental results showed that the reflectivity increased by 0.5 ~ 1% under all nitride thickness conditions when Ag nano-dots structure was formed before nitride film deposition. In addition, when the Ag nano-dots structure is formed after deposition of the silicon nitride film, the reflectance is increased in the nitride film condition of 70 nm or more. When the HF treatment was performed for 60 seconds to improve the Ag nano-dot structure, the overall reflectance was improved, and the reflectance was 0.15% lower than that of the silicon nitride film-only sample at 90 nm silicon nitride film condition.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.50 no.2
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• pp.127-135
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• 2022

Compared to the continuous increase of domestic nano-satellite development cases, the initial communication success rate is relatively low. In a situation where communication cases of LEO satellites using commercial satellite communication networks are increasing recently. In this situation, the SNIPE project developed by the KASI(Korea Astronomy and Space Science Institute), KARI(Korea Aerospace Research Institute), and Yonsei University apply an Iridium module for communication test to the SNIPE nano-satellites. Therefore, in this paper, the visibility analysis of the iridium module on the SNIPE satellite was analyzed under considering the orbital and communication environment of the iridium satellite constellation and the attitude control mode. In the case of LEO satellites, the communication possibility was limited due to the relatively small iridium communication coverage for high altitude and the high doppler shift considered in the iridium communication network. For this reason, in this paper, it could be simulated that there was a more performance difference according to the difference in relative RAAN(Right Ascension of Ascending Node) angle with the Iridium constellation. Finally, by checking the visibility of communication module under the tumbling situation that occurred during the initial deployment of the nano-satellite, the possibility of using the iridium communication technology was analyzed.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.75-75
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• 2003

• Journal of the Semiconductor & Display Technology
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• v.18 no.3
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• pp.19-24
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• 2019

In this study, the Ag nano-dots structure was applied to the textured wafer surface to improve the light trapping effect of crystalline silicon solar cell. The Ag nano-dots structure was formed by the annealing of Ag thin film. Ag thin film deposition was performed using a thermal evaporator. The effect of light trapping was compared and analyzed through light reflectance measurements. The optimization process of the Ag nano-dots structure was made by varying the thickness of Ag thin film, the annealing temperature and time. The thickness of Ag thin films was in the range of 5 ~ 20 nm. The annealing temperature was in the range of 450~650℃ and the annealing time was in the range of 30 ~ 60 minutes. As a result, the light reflectance of 10 nm Ag thin film annealed at 650℃ for 30 minutes showed the lowest value of about 9.67%. This is a value that is about 3.37% lower than the light reflectance of the sample that has undergone only the texturing process. Finally, the change of the light reflectance by the HF treatment of the sample on which the Ag nano-dots structure was formed was investigated. The HF treatment time was in the range of 0 ~ 120 seconds. As a result, the light reflectance decreased by about 0.41% due to the HF treatment for 75 seconds.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.24 no.10
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• pp.1306-1311
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• 2020

In this study, we proposed an anti-reflective nano-structure to improve the photoresponsivity of AlGaN UV photodiode that can be used as a receiver in a solar blind UV optical communication system. The anti-reflective nano-structure was fabricated by forming Ni nano-clusters on SiO2 film followed by etching the underneath SiO2 film. A sample with the anti-reflective nano-structure exhibited lower surface reflection along with less dependency on the wavelength in comparison with a sample without the nano-structure. Finally, a UV photodiode was fabricated by applying an anti-reflective structure produced by heat-treating a 2 nm-thick Ni layer. The photodiode fabricated with the proposed nano-structure exhibited noticeable improvement in the photoresponsivity at the wavelength range from 240 nm to 270 nm in comparison with the same photodiode with a SiO2 film without the nano-structure.

• Advances in nano research
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• v.3 no.4
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• pp.207-223
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• 2015

Nanotechnology is considered the most important technological advancement in recent years, and it is utilized in all industries due to its potential applications. Almost all of the industries (food, agriculture, medicine, automotive, information and communication technologies, energy, textile, construction, etc.) reorganize their future in the light of nanotechnological developments. As the most important source of income of countries, the agriculture industry increases the use of nanotechnology products gradually as a solution to the problems encountered. Reducing the use of agricultural inputs (pesticides, herbicides, fertilizers, etc.) by increasing their efficiency utilizing nano-carriers, detecting the environmental conditions and development of the crops in the field simultaneously by making use of nanosensors, reducing the sample volume and the amount of analyte used thanks to nanoarrays, effective treatment of water resources through nano-filters, accelerating the development of crops by using nanoparticles are the prominent nanotechnological applications in the agriculture industry. This review presents information on the benefits of the recent developments in nanotechnology applications in the agriculture industry.

• International Journal of Internet, Broadcasting and Communication
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• v.11 no.1
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• pp.27-38
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• 2019

Sensors collect information for Internet of Things (IoT)-based services. However, indoor construction sites have a poor communication environment and many interfering elements that make it difficult to collect sensor information. In this study, a network was constructed between a Bluetooth Low Energy (BLE)-based IoT device based on a serverless IoT framework and a router. This experimental environment was applied to large- and small-scale indoor construction sites. Experiments were performed to test the communication performance of BLE-based IoT devices and routers at indoor construction sites. An analysis of the received signal strength indication (RSSI) graph patterns collected from the communication between the BLE-based IoT devices and routers for different testbed site situation revealed areas with good communication performance and poor communication performance due to interfering factors. The results confirmed that structural components of the building as well as the materials, equipment, and temporary facilities used in indoor construction interfere with the communication performance. Construction project managers will require improved technical knowledge of IoT, such as optimizing the router placement and matching communication between the router and workers, to improve the communication performance for large-scale indoor construction.

• Transactions of the Society of Information Storage Systems
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• v.3 no.2
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• pp.94-112
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• 2007

Nano-sized inverted domain dots in ferroelectric materials have potential application in ultrahigh-density rewritable data storage systems. Herein, a data storage system is presented based on scanning non-linear dielectric microscopy and a thin film of ferroelectric single-crystal lithium tantalite. Through domain engineering, we succeeded to form an smallest artificial nano-domain single dot of 5.1 nm in diameter and artificial nano-domain dot-array with a memory density of 10.1 Tbit/$inch^2$ and a bit spacing of 8.0 nm, representing the highest memory density for rewritable data storage reported to date. Sub-nanosecond (500psec) domain switching speed also has been achieved. Next, long term retention characteristic of data with inverted domain dots is investigated by conducting heat treatment test. Obtained life time of inverted dot with the radius of 50nm was 16.9 years at $80^{\circ}C$. Finally, actual information storage with low bit error and high memory density was performed. A bit error ratio of less than $1\times10^{-4}$ was achieved at an areal density of 258 Gbit/inch2. Moreover, actual information storage is demonstrated at a density of 1 Tbit/$inch^2$.

• Proceedings of the KIEE Conference
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• 2005.07d
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• pp.2537-2539
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• 2005

In many cases the systems are so complex that it is not possible to obtain reasonable models using physical laws. Also a model based on physical laws contains a number of unknown parameters even if the structure is derived from physical laws. These problems can be solved by system identification. In this paper, a nano stage system is selected as an example for system identification. The transfer functions of this system is derived by using state-space model structure based on input/output data through experiment.