Browse > Article
http://dx.doi.org/10.6109/jkiice.2020.24.10.1306

Improved photoresponsivity of AlGaN UV photodiode using antireflective nanostructure  

Dac, Duc Chu (School of Electronic and Electrical Engineering, Hong-Ik University)
Choi, June-Heang (School of Electronic and Electrical Engineering, Hong-Ik University)
Kim, Jeong-Jin (Metamaterial Electronic Device Research Center, Hong-Ik University)
Cha, Ho-Young (School of Electronic and Electrical Engineering, Hong-Ik University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.24, no.10, 2020 , pp. 1306-1311 More about this Journal
Abstract
In this study, we proposed an anti-reflective nano-structure to improve the photoresponsivity of AlGaN UV photodiode that can be used as a receiver in a solar blind UV optical communication system. The anti-reflective nano-structure was fabricated by forming Ni nano-clusters on SiO2 film followed by etching the underneath SiO2 film. A sample with the anti-reflective nano-structure exhibited lower surface reflection along with less dependency on the wavelength in comparison with a sample without the nano-structure. Finally, a UV photodiode was fabricated by applying an anti-reflective structure produced by heat-treating a 2 nm-thick Ni layer. The photodiode fabricated with the proposed nano-structure exhibited noticeable improvement in the photoresponsivity at the wavelength range from 240 nm to 270 nm in comparison with the same photodiode with a SiO2 film without the nano-structure.
Keywords
AlGaN; Solar-blind UV optical communication; Photodiode; Anti-reflective structure;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
연도 인용수 순위
1 G. A. Shaw, A. M. Siegel, J. Model, and D. Greisokh, "Recent progress in short-range ultraviolet communication," Proceeding SPIE Defense Security Symposium, vol. 5796, pp. 214-225, 2005.
2 P. Sandvik, L. Burr, S. Soloviev, S. Arthur, K. Matocha, J. Kretchmer, L. Lombardo, and D. Brown, "SiC photodetectors for industrial applications," Proceeding IEEE Lasers and Electro-Optics Socciety 2005, vol. 1, pp. 319-320, 2005.
3 S. S. Liu, P. W. Li, W. H. Lan, and Y. C. Cheng, "The improvement of GaN pin UV sensor by 8-pair AlGaN/GaN superlattices structure," Materials Science and Engineering: B, vol. 126, pp. 33-36, 2006.   DOI
4 W. H. Jang and H. Y. Cha, "Development of Selective GaN etching Process for p-GaN/AlGaN/GaN E-mode FET Fabrication," Journal of the Korea Institute of Information and Communication Engineering, vol. 24, no. 2, pp. 321-324, 2020.
5 Y. H. Lee, Y. H. Kim, H. Kim, and J. H. Oh, "Recent Research Trend in Photosensors for Electronic Skin," Korean Industrial Chemistry News, vol. 21, no. 1, pp. 19-33, 2018.
6 G. Tan, J. H. Lee, Y. H. Lan, M. K. Wei, L. H. Peng, I. C. Cheng, and S. T. Wu, "Broadband antireflection film with moth-eye-like structure for flexible display applications," Optica, vol. 4, no. 7, pp. 678-683, 2017.   DOI
7 S. Jang, S. M. Kang, and M Choi, "Multifunctional Moth-Eye TiO2/PDMS Pads with High Transmittance and UV Filtering," ACS Applied Materials Interfaces, vol. 9, pp. 44038-44044, 2017.   DOI
8 J. Cai and L. Qi, "Recent advances in antireflective surfaces based on nanostructure arrays," Materials Horizons, vol. 2, pp. 37-53, 2015.   DOI
9 B.J. Baliga, "Fundamentals of power semiconductor devices," New York, NY: Springer Science, pp.137-148, 2008.
10 E. Chong, Y. J. Koh, D. H. Lee, I. H. Bae, J. S. Kim, Y. S. Jeong, J. Y. Ryu, J. Y. Lee, M. J. Kang, J. H. Park, and K. K. Choi, "Effect of beveled mesa angle on the leakage performance of 4H-SiC avalanche photodiodes," Solid-State Electronics, vol. 156, pp.1-4, 2019.   DOI
11 D. A. Orlov, R. Glazenborg, R. Ortega, and E. Kernen, "UV/visible high sensitivity MCP PMT single photon GHz counting detector for long‑range lidar instrumentations," CEAS Space Journal, vol. 11, pp. 405-411, 2019.   DOI