• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.311-311
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• 2006

The morphology of Poly(styrene-b-methylmethacrylate) (P(S-b-MMA)) block copolymer thin films deposited on silicon wafers was controlled by treating the substrates with Self-Assembled Monolayers (SAM) of phenylsilanes with different alkyl chain lengths. It was found that the treatment with SAM strongly modified the substrates properties, especillay the surface energy, as compared with bare silicon oxide. By futher adjusting the molecular weight of P(S-b-MMA), a variety of morphologies could be generated, including a perpendicular orientation of lamellea of PS and PMMA, which is required for industrial applications.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.83-88
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• 2005

The interface-states between the top silicon layer and buried oxide layer of nano-SOI substrate were developed. Also, the effects of thermal treatment processes on the interface-state distributions were investigated for the first time by using pseudo-MOSFETs. We found that the interface-state distributions were strongly influenced by the thermal treatment processes. The interface-states were generated by the rapid thermal annealing (RTA) process. Increasing the RTA temperature over $800^{\circ}C$, the interface-state density considerably increased. Especially, a peak of interface-states distribution that contributes a hump phenomenon of subthreshold curve in the inversion mode operation of pseudo-MOSFETs was observed at the conduction band side of the energy gap, hut it was not observed in the accumulation mode operation. On the other hand, the increased interface-state density by the RTA process was effectively reduced by the relatively low temperature annealing process in a conventional thermal annealing (CTA) process.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.5
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• pp.1007-1012
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• 2007

A novel Michelson interferometer controlled with a feedback circuit(MIFC) has been developed and its performance has been evaluated. This new interferometer can measure the displacement of the sample by directly reading the feedback bias applied to the PZT whose piezoelectric characteristic is known. The experimental result showed that the step height the silicon membrane measured by using MIFC was actually same with the value measured by SEM, which confirms that MICS is an easy and accurate method for the nano-scale displacement measurement.

• KSTLE International Journal
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• v.8 no.2
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• pp.26-28
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• 2007

Si(100) surfaces were topographically modified i.e. the surfaces were patterned at micro-scale using photolithography and DRIE (Deep Reactive Ion Etching) fabrication techniques. The patterned shapes included micro-pillars and microchannels. After the fabrication of the patterns, the patterned surfaces were chemically modified by coating a thin DLC film. The surfaces were then evaluated for their friction behavior at micro-scale in comparison with those of bare Si(100) flat, DLC coated Si(100) flat and uncoated patterned surfaces. Experimental results showed that the chemically treated (DLC coated) patterned surfaces exhibited the lowest values of coefficient of friction when compared to the rest of the surfaces. This indicates that a combination of both the topographical and chemical modification is very effective in reducing the friction property. Combined surface treatments such as these could be useful for tribological applications in miniaturized devices such as Micro-Electro-Mechanical-Systems (MEMS).

• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.165-165
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.166-166
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.307-307
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• 2008

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.10a
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• pp.701-702
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• 2009

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.05a
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• pp.368-370
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• 2007

AAO(Anodic Aluminum Oxidation) method has been known that it is practically useful for the fabrication of nano-structures and makes it possible to fabricate the highly ordered nano masters on large surface and even on the 2.5 or 3D surface at low cost comparing to the expensive e-beam lithography or the conventional silicon processing. In this study, by using the multi-step anodizing and etching processes, highly ordered nano patterned master with concave shapes was fabricated. By varying the processing parameters, such as initial matter and chemical conditions; electrical and thermal conditions; time scheduling; and so on, the size and the pitch of the nano pattern can be controlled. Consequently, various alumina/aluminum nano structures can be easily available in any size and shape by optimized anodic oxidation in various aqueous acids. The resulting good filled uniform nano molded structure through hot embossing molding process shows the validity of the fabricated nano pattern masters.

• Proceedings of the Korean Vacuum Society Conference
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• 2007.08a
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• pp.310-310
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• 2007