• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.433-439
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• 2011

Poly Si TFTs (poly silicon thin film transistors) with p channel those are annealed HT (high temperature) with gate poly crystalline silicon and LT (low temperature) with metal gate electrode were fabricated on quartz substrate using the analyzed data and compared according to the activated grade silicon thin films and the size of device channel. The electrical characteristics of HT poly-Si TFTs increased those are the on current, electron mobility and decrease threshold voltage by the quality of particles of active thin films annealed at high temperature. But the on/off current ratio reduced by increase of the off current depend on the hot carrier applied to high gate voltage. Even though the size of the particles annealed at low temperature are bigger than HT poly-Si TFTs due to defect in the activated grade poly crystal silicon and the grain boundary, the characteristics of LT poly-Si TFTs were investigated deterioration phenomena those are decrease the electric off current, electron mobility and increase threshold voltage. The results of transconductance show that slope depend on the quality of particles and the amplitude depend on the size of the active silicon particles.

• Korean Journal of Materials Research
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• v.31 no.9
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• pp.481-487
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• 2021

ZnO particles are successfully synthesized at 150 ℃ for 30 min using zinc acetate as the Zn source and 1,4-butanediol as solvent using a relatively facile and convenient glycol process. The effect of ammonium hydroxide amounts on the growth behavior and the morphological evolution of ZnO particles are investigated. The prepared ZnO nanoparticle with hexagonal structure exhibits a quasi-spherical shape with an average crystallite size of approximately 30 nm. It is also demonstrated that the morphology of ZnO particles can be controlled by 1,4-butanediol with an additive of ammonium hydroxide. The morphologies of ZnO particles are changed sequentially from a quasi-spherical shape to a rod-like shape and a hexagonal rod shape with a truncated pyramidal tip, exhibiting preferential growth along the [001] direction with increasing ammonium hydroxide amounts. It is demonstrated that much higher OH^- amounts can produce a nano-tip shape grown along the [001] direction at the corners and center of the (001) top polar plane, and a flat hexagonal symmetry shape of the bottom polar plane on ZnO hexagonal prisms. The results indicate that the presence of NH⁴⁺ and OH^- ions in the solution greatly affects the growth behaviors of ZnO particles. A sharp near-band-edge (NBE) emission peak centered at 383 nm in the UV region and a weak broad peak in the visible region between 450 nm and 700 nm are shown in the PL spectra of the ZnO synthesized using the glycol process, regardless of adding ammonium hydroxide. Although the broad peak of the deep-level-emission (DLE) increases with the addition of ammonium hydroxide, it is suggested that the prominent NBE emission peaks indicate that ZnO nanoparticles with good crystallization are obtained under these conditions.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.321-328
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• 2011

The 30 nm-thick Ni layers was deposited on a flexible polyimide substrate with an e-beam evaporation. Subsequently, we deposited a Si layer using a catalytic CVD (Cat-CVD) in a hydride amorphous silicon (${\alpha}$-Si:H) process of $T_{s}=180^{\circ}C$ with varying thicknesses of 55, 75, 145, and 220 nm. The sheet resistance, phase, degree of the crystallization, microstructure, composition, and surface roughness were measured by a four-point probe, HRXRD, micro-Raman spectroscopy, FE-SEM, TEM, AES, and SPM. We confirmed that our newly proposed Cat-CVD process simultaneously formed both NiSi and crystallized Si without additional annealing. The NiSi showed low sheet resistance of < $13{\Omega}$□, while carbon (C) diffused from the substrate led the resistance fluctuation with silicon deposition thickness. HRXRD and micro-Raman analysis also supported the existence of NiSi and crystallized (>66%) Si layers. TEM analysis showed uniform NiSi and silicon layers, and the thickness of the NiSi increased as Si deposition time increased. Based on the AES depth profiling, we confirmed that the carbon from the polyimide substrate diffused into the NiSi and Si layers during the Cat-CVD, which caused a pile-up of C at the interface. This carbon diffusion might lessen NiSi formation and increase the resistance of the NiSi.

• Membrane Journal
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• v.31 no.1
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• pp.67-79
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• 2021

Mesoporous polystyrene (PS) and polyethersulfone (PES) membranes have been fabricated by reverse-thermally induced phase separation (RTIPS) process, using flash freezing. The mesoporous pores can be created by the nano-scaled phase separation induced by the formation and growth of solvent crystals in the dope solution in RTIPS process. RTIPS process has been characterized through analysis on the enthalpy change in the solvent of the dope solution, the morphology of the membrane fabricated with different polymer content, and the pore size distribution and its standard deviation of pore size of the membrane with polymer content via DSC, SEM, and BET, respectively. It is found that the kinetic aspect of the dope solution, i.e., the crystallization of solvent is a crucial factor to determine the structure of membrane fabricated in RTIPS rather than the thermodynamic aspect of the dope solution.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• Journal of the Korean Applied Science and Technology
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• v.24 no.2
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• pp.174-181
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• 2007

In this study, $SiO_2/poly(ethylene-co-vinyl$ alcohol)(EVOH) hybrid coating materials with gas barrier property could be produced using sol-gel method. The biaxially oriented polypropylene (BOPP) substrate with surface pretreatment was coated with the prepared hybrid sols containing various inorganic silicate component by a spin coating method. Crystallization behavior of the hybrids was investigated in terms of analysis of X-ray diffraction and cooling thermogram from DSC experiment. From the morphological observation of the $SiO_2/EVOH$ hybrid gel, it was confirmed that there existed an optimum content of inorganic silicate precursor, Tetraethylorthosilicate (TEOS), to produce hybrid materials with dense microstructure, exhibiting uniformly dispersed silica particles with average size below 100 nm. When TEOS was added at below or above the optimum content, particle clusters with large domain were observed, resulting in phase separation. This morphological result was found to be in good agreement with that of oxygen permeability of the hybrid coated films. In the case of film coated with hybrid prepared from addition of 0.01 - 0.02mol of TEOS, a remarkable improvement in barrier property could be obtained, however, with the addition of TEOS more than 0.04 mol, the barrier property was dramatically reduced because of phase separation and micro-crack formation on the film surface.

• Membrane Journal
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• v.26 no.5
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• pp.381-390
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• 2016

In this study, the natural mordenite (MOR) zeolite seeds were used for the synthesis of high purity mordenite crystals. The effect of seed concentration and crystallization time on the phase purity and surface morphology of MOR crystals has also been reported. The diffraction, elemental and scanning analysis of MOR zeolite particles obtained from 100 g hydrothermal solution batch containing 3 g natural seed, hydrothermally treated at $140^{\circ}C$ for 72 h reveal the high phase-purity of as-synthesized sample having crystals of uniform size ($1-2{\mu}m$). Moreover, high seed concentration leads to the production of mesoporous MOR particles composed of needle shape primary nano crystallites. The gases adsorption performances of as-synthesized MOR particle were carried out at $25^{\circ}C$ and 0-1 bar. Surprisingly, MOR particles show good adsorption potential for $CO_2$ (97.19 mg/g) compared to other gases. Thus it confirms that high purity MOR particles can be synthesized without using any organic template which gives an advantage of separation performance at lower price.